Timothy VASEN

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Gate all around semiconductor structure with diffusion break
- Patent number 12,089,423
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Marcus Johannes Henricus Van Dal
Information Patent Grant
Methods of manufacturing a field effect transistor using carbon nan...
- Patent number 12,069,874
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Marcus Johannes Henricus Van Dal
Information Patent Grant
Methods of manufacturing a field effect transistor using carbon nan...
- Patent number 11,659,721
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Timothy Vasen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel field-effect transistor with reduced trap-assisted tunneling...
- Patent number 11,349,022
- Issue date May 31, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Timothy Vasen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a field effect transistor using carbon nano...
- Patent number 10,727,427
- Issue date Jul 28, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Timothy Vasen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Methods of Manufacturing a Field Effect Transistor Using Carbon Nan...
- Publication number 20240414927
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Marcus Johannes Henricus VAN DAL
Information Patent Application
GATE ALL AROUND SEMICONDUCTOR STRUCTURE WITH DIFFUSION BREAK
- Publication number 20240365569
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Marcus Johannes Henricus VAN DAL
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20230361202
- Publication date Nov 9, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY , LTD.
- Blandine DURIEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND SEMICONDUCTOR STRUCTURE WITH DIFFUSION BREAK
- Publication number 20230301120
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Marcus Johannes Henricus VAN DAL
Information Patent Application
METHODS OF MANUFACTURING A FIELD EFFECT TRANSISTOR USING CARBON NAN...
- Publication number 20230276640
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Marcus Johannes Henricus VAN DAL
Information Patent Application
METHODS OF MANUFACTURING A FIELD EFFECT TRANSISTOR USING CARBON NAN...
- Publication number 20210343958
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Timothy VASEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL FIELD-EFFECT TRANSISTOR WITH REDUCED TRAP-ASSISTED TUNNELING...
- Publication number 20200303530
- Publication date Sep 24, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Timothy Vasen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A FIELD EFFECT TRANSISTOR USING CARBON NANO...
- Publication number 20200075875
- Publication date Mar 5, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Timothy VASEN
- H01 - BASIC ELECTRIC ELEMENTS

Timothy VASEN

Person

Patents Grantslast 30 patents

Gate all around semiconductor structure with diffusion break

Methods of manufacturing a field effect transistor using carbon nan...

Methods of manufacturing a field effect transistor using carbon nan...

Tunnel field-effect transistor with reduced trap-assisted tunneling...

Method of manufacturing a field effect transistor using carbon nano...

Patents Applicationslast 30 patents

Methods of Manufacturing a Field Effect Transistor Using Carbon Nan...

GATE ALL AROUND SEMICONDUCTOR STRUCTURE WITH DIFFUSION BREAK

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

GATE ALL AROUND SEMICONDUCTOR STRUCTURE WITH DIFFUSION BREAK

METHODS OF MANUFACTURING A FIELD EFFECT TRANSISTOR USING CARBON NAN...

METHODS OF MANUFACTURING A FIELD EFFECT TRANSISTOR USING CARBON NAN...

TUNNEL FIELD-EFFECT TRANSISTOR WITH REDUCED TRAP-ASSISTED TUNNELING...

METHOD OF MANUFACTURING A FIELD EFFECT TRANSISTOR USING CARBON NANO...