Ting Cheong Ang

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor trench structure having a silicon nitride layer overl...
- Patent number 9,029,978
- Issue date May 12, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for metal barrier and seed integration
- Patent number 8,309,456
- Issue date Nov 13, 2012
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of eliminating micro-trenches during spacer etch
- Patent number 8,187,950
- Issue date May 29, 2012
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving adhesion strength of low dielectric constant la...
- Patent number 8,110,502
- Issue date Feb 7, 2012
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method with high gapfill capability for semiconductor devices
- Patent number 8,026,151
- Issue date Sep 27, 2011
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving a shallow trench isolation gapfill process
- Patent number 7,989,309
- Issue date Aug 2, 2011
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming low dielectric constant fluorine-doped layers
- Patent number 7,910,475
- Issue date Mar 22, 2011
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ting Cheong Ang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming low dielectric constant fluorine-doped layers
- Patent number 7,579,271
- Issue date Aug 25, 2009
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ting Cheong Ang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method with high gapfill capability for semiconductor devices
- Patent number 7,456,067
- Issue date Nov 25, 2008
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF ELIMINATING MICRO-TRENCHES DURING SPACER ETCH
- Publication number 20120211863
- Publication date Aug 23, 2012
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF IMPROVING A SHALLOW TRENCH ISOLATION GAPFILL PROCESS
- Publication number 20110198734
- Publication date Aug 18, 2011
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ELIMINATING MICRO-TRENCHES DURING SPACER ETCH
- Publication number 20100006975
- Publication date Jan 14, 2010
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING LOW DIELECTRIC CONSTANT FLUORINE-DOPED LAYERS
- Publication number 20090280653
- Publication date Nov 12, 2009
- Semiconductor Manufacturing International (Shanghai) Corporation
- TING CHEONG ANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method and High Gapfill Capability for Semiconductor Devices
- Publication number 20090075454
- Publication date Mar 19, 2009
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method with High Gapfill Capability for Semiconductor Devices
- Publication number 20070275538
- Publication date Nov 29, 2007
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Improving a Shallow Trench Isolation Gapfill Process
- Publication number 20070254453
- Publication date Nov 1, 2007
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming low dielectric constant fluorine-doped layers
- Publication number 20070190769
- Publication date Aug 16, 2007
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ting Cheong Ang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method with high gapfill capability and resulting device structure
- Publication number 20070161203
- Publication date Jul 12, 2007
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of improving adhesion strength of low dielectric constant la...
- Publication number 20070134900
- Publication date Jun 14, 2007
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for improving breakdown voltage of integrated...
- Publication number 20070128860
- Publication date Jun 7, 2007
- Semiconductor Manufacturing International (Shanghai) Corporation
- Kuan Cheng Hou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method and system for metal barrier and seed integration
- Publication number 20060110902
- Publication date May 25, 2006
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS

Ting Cheong Ang

Person

Patents Grantslast 30 patents

Semiconductor trench structure having a silicon nitride layer overl...

Method and system for metal barrier and seed integration

Method of eliminating micro-trenches during spacer etch

Method of improving adhesion strength of low dielectric constant la...

Method with high gapfill capability for semiconductor devices

Method of improving a shallow trench isolation gapfill process

Method for forming low dielectric constant fluorine-doped layers

Method for forming low dielectric constant fluorine-doped layers

Method with high gapfill capability for semiconductor devices

Patents Applicationslast 30 patents

METHOD OF ELIMINATING MICRO-TRENCHES DURING SPACER ETCH

METHOD OF IMPROVING A SHALLOW TRENCH ISOLATION GAPFILL PROCESS

METHOD OF ELIMINATING MICRO-TRENCHES DURING SPACER ETCH

METHOD FOR FORMING LOW DIELECTRIC CONSTANT FLUORINE-DOPED LAYERS

Method and High Gapfill Capability for Semiconductor Devices

Method with High Gapfill Capability for Semiconductor Devices

Method of Improving a Shallow Trench Isolation Gapfill Process

Method for forming low dielectric constant fluorine-doped layers

Method with high gapfill capability and resulting device structure

Method of improving adhesion strength of low dielectric constant la...

Method and apparatus for improving breakdown voltage of integrated...

Method and system for metal barrier and seed integration