Ting FANG

Person

Kaohsiung City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Source/drain contact structure
- Patent number 12,166,088
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ting Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain contact having a protruding segment
- Patent number 11,968,817
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jui-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device structure with deep con...
- Patent number 11,742,400
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ting Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure with air spacer for semiconductor device and meth...
- Patent number 11,646,346
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Hao Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain contact structure
- Patent number 11,387,331
- Issue date Jul 12, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ting Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain contact having a protruding segment
- Patent number 11,264,393
- Issue date Mar 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jui-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
OVERHANGING SOURCE/DRAIN CONTACT
- Publication number 20240379860
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hao Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN CONTACT HAVING A PROTRUDING SEGMENT
- Publication number 20240292590
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jui-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Contact Structure
- Publication number 20220336592
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Ting Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE WITH AIR SPACER FOR SEMICONDUCTOR DEVICE AND METH...
- Publication number 20220328622
- Publication date Oct 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hao CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...
- Publication number 20220328639
- Publication date Oct 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ting FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OVERHANGING SOURCE/DRAIN CONTACT
- Publication number 20220223743
- Publication date Jul 14, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hao Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Contact Having a Protruding Segment
- Publication number 20220181332
- Publication date Jun 9, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Jui-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Contact Structure
- Publication number 20220028983
- Publication date Jan 27, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Ting Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Contact Having a Protruding Segment
- Publication number 20210098468
- Publication date Apr 1, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Jui-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH DEEP CON...
- Publication number 20200058747
- Publication date Feb 20, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ting FANG
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Source/drain contact structure

Source/drain contact having a protruding segment

Fin field effect transistor (FinFET) device structure with deep con...

Contact structure with air spacer for semiconductor device and meth...

Source/drain contact structure

Source/drain contact having a protruding segment

Patents Applicationslast 30 patents

OVERHANGING SOURCE/DRAIN CONTACT

SOURCE/DRAIN CONTACT HAVING A PROTRUDING SEGMENT

Source/Drain Contact Structure

CONTACT STRUCTURE WITH AIR SPACER FOR SEMICONDUCTOR DEVICE AND METH...

METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...

OVERHANGING SOURCE/DRAIN CONTACT

Source/Drain Contact Having a Protruding Segment

Source/Drain Contact Structure

Source/Drain Contact Having a Protruding Segment

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH DEEP CON...