Tinggang Zhu

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical gallium nitride Schottky diode
- Patent number 10,573,762
- Issue date Feb 25, 2020
- Alpha and Omega Semiconductor Incorporated
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally off gallium nitride field effect transistors (FET)
- Patent number 10,439,058
- Issue date Oct 8, 2019
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination structure for gallium nitride Schottky diode including...
- Patent number 10,333,006
- Issue date Jun 25, 2019
- Alpha and Omega Semiconductor Incorporated
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated Schottky diode in high voltage semiconductor device
- Patent number 10,177,221
- Issue date Jan 8, 2019
- Alpha and Omega Semiconductor Incorporated
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride semiconductor device with improved termination scheme
- Patent number 10,170,563
- Issue date Jan 1, 2019
- Alpha and Omega Semiconductor Incorporated
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination structure for gallium nitride Schottky diode
- Patent number 10,038,106
- Issue date Jul 31, 2018
- Alpha and Omega Semiconductor Incorporated
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally off gallium nitride field effect transistors (FET)
- Patent number 10,020,389
- Issue date Jul 10, 2018
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated Schottky diode in high voltage semiconductor device
- Patent number 9,876,073
- Issue date Jan 23, 2018
- Alpha and Omega Semiconductor Incorporated
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination structure for gallium nitride schottky diode
- Patent number 9,728,655
- Issue date Aug 8, 2017
- Alpha and Omega Semiconductor Incorporated
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated Schottky diode in high voltage semiconductor device
- Patent number 9,620,584
- Issue date Apr 11, 2017
- Alpha and Omega Semiconductor Incorporated
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally off gallium nitride field effect transistors (FET)
- Patent number 9,520,480
- Issue date Dec 13, 2016
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection circuit including vertical gallium nitride schottky diod...
- Patent number 9,406,661
- Issue date Aug 2, 2016
- Alpha and Omega Semiconductor Incorporated
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally off gallium nitride field effect transistors (FET)
- Patent number 9,064,945
- Issue date Jun 23, 2015
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gallium nitride Schottky diode
- Patent number 8,994,140
- Issue date Mar 31, 2015
- Alpha and Omega Semiconductor Incorporated
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Corner layout for superjunction device
- Patent number 8,975,720
- Issue date Mar 10, 2015
- Alpha and Omega Semiconductor Incorporated
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming termination structure for gallium nitride Schott...
- Patent number 8,927,402
- Issue date Jan 6, 2015
- Alpha and Omega Semiconductor Incorporated
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated Schottky diode in high voltage semiconductor device
- Patent number 8,829,614
- Issue date Sep 9, 2014
- Alpha and Omega Semiconductor Incorporated
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gallium nitride Schottky diode
- Patent number 8,772,144
- Issue date Jul 8, 2014
- Alpha and Omega Semiconductor Incorporated
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination structure for gallium nitride schottky diode
- Patent number 8,772,901
- Issue date Jul 8, 2014
- Alpha and Omega Semiconductor Incorporated
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Corner layout for superjunction device
- Patent number 8,476,698
- Issue date Jul 2, 2013
- Alpha and Omega Semiconductor Incorporated
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming gallium nitride semiconductor device with improv...
- Patent number 8,383,499
- Issue date Feb 26, 2013
- Alpha and Omega Semiconductor Incorporated
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a gallium nitride based semiconductor devi...
- Patent number 8,372,738
- Issue date Feb 12, 2013
- Alpha & Omega Semiconductor, Inc.
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally off gallium nitride field effect transistors (FET)
- Patent number 8,338,860
- Issue date Dec 25, 2012
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride semiconductor device with improved forward conduction
- Patent number 8,253,216
- Issue date Aug 28, 2012
- Alpha & Omega Semiconductor, Inc.
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride semiconductor device with improved forward conduction
- Patent number 8,013,414
- Issue date Sep 6, 2011
- Alpha & Omega Semiconductor, Inc.
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride heterojunction schottky diode
- Patent number 7,842,974
- Issue date Nov 30, 2010
- Alpha & Omega Semiconductor, Inc.
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE
- Publication number 20190296157
- Publication date Sep 26, 2019
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION STRUCTURE FOR GALLIUM NITRIDE SCHOTTKY DIODE INCLUDING...
- Publication number 20180323315
- Publication date Nov 8, 2018
- ALPHA & OMEGA SEMICONDUCTOR, INC
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY OFF GALLIUM NITRIDE FIELD EFFECT TRANSISTORS (FET)
- Publication number 20180308967
- Publication date Oct 25, 2018
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SCHOTTKY DIODE IN HIGH VOLTAGE SEMICONDUCTOR DEVICE
- Publication number 20180212022
- Publication date Jul 26, 2018
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE SEMICONDUCTOR DEVICE WITH IMPROVED TERMINATION SCHEME
- Publication number 20180182853
- Publication date Jun 28, 2018
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Tinggang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION STRUCTURE FOR GALLIUM NITRIDE SCHOTTKY DIODE
- Publication number 20170301800
- Publication date Oct 19, 2017
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SCHOTTKY DIODE IN HIGH VOLTAGE SEMICONDUCTOR DEVICE
- Publication number 20170213887
- Publication date Jul 27, 2017
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY OFF GALLIUM NITRIDE FIELD EFFECT TRANSISTORS (FET)
- Publication number 20170084730
- Publication date Mar 23, 2017
- Alpha and Omaga Semiconductor Incorporated
- Anups Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY OFF GALLIUM NITRIDE FIELD EFFECT TRANSISTORS (FET)
- Publication number 20160380073
- Publication date Dec 29, 2016
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Termination structure for gallium nitride schottky diode
- Publication number 20160372610
- Publication date Dec 22, 2016
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SCHOTTKY DIODE IN HIGH VOLTAGE SEMICONDUCTOR DEVICE
- Publication number 20160043169
- Publication date Feb 11, 2016
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTION CIRCUIT INCLUDING VERTICAL GALLIUM NITRIDE SCHOTTKY DIO...
- Publication number 20150228729
- Publication date Aug 13, 2015
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING TERMINATION STRUCTURE FOR GALLIUM NITRIDE SCHOTT...
- Publication number 20140273417
- Publication date Sep 18, 2014
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE
- Publication number 20140252372
- Publication date Sep 11, 2014
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE SEMICONDUCTOR DEVICE WITH IMPROVED TERMINATION SCHEME
- Publication number 20140225120
- Publication date Aug 14, 2014
- Tinggang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY OFF GALLIUM NITRIDE FIELD EFFECT TRANSISTORS (FET)
- Publication number 20140175451
- Publication date Jun 26, 2014
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CORNER LAYOUT FOR SUPERJUNCTION DEVICE
- Publication number 20130277740
- Publication date Oct 24, 2013
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Gallium Nitride Schottky Diode
- Publication number 20130119393
- Publication date May 16, 2013
- Alpha and Omega Semiconductor Inc.
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Termination Structure for Gallium Nitride Schottky Diode
- Publication number 20130119394
- Publication date May 16, 2013
- Alpha and Omega Semiconductor Inc.
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Forming Gallium Nitride Semiconductor Device With Improv...
- Publication number 20120282762
- Publication date Nov 8, 2012
- ALPHA & OMEGA SEMICONDUCTOR, INC
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Semiconductor Device With Improved Forward Conduction
- Publication number 20110278589
- Publication date Nov 17, 2011
- ALPHA & OMEGA SEMICONDUCTOR, INC
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CORNER LAYOUT FOR SUPERJUNCTION DEVICE
- Publication number 20110204442
- Publication date Aug 25, 2011
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride semiconductor device with improved termination scheme
- Publication number 20110101369
- Publication date May 5, 2011
- Alpha and Omega Semiconductor, Inc.
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Normally off gallium nitride field effect transistors (FET)
- Publication number 20110103148
- Publication date May 5, 2011
- Alpha and Omega Semiconductor, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated schottky diode in high voltage semiconductor device
- Publication number 20110049564
- Publication date Mar 3, 2011
- Alpha and Omega Semiconductor, Inc.
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Heterojunction Schottky Diode
- Publication number 20100207166
- Publication date Aug 19, 2010
- ALPHA & OMEGA SEMICONDUCTOR, INC
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Semiconductor Device With Improved Forward Conduction
- Publication number 20100207232
- Publication date Aug 19, 2010
- ALPHA & OMEGA SEMICONDUCTOR, INC
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS

Tinggang Zhu

Person

Patents Grantslast 30 patents

Vertical gallium nitride Schottky diode

Normally off gallium nitride field effect transistors (FET)

Termination structure for gallium nitride Schottky diode including...

Integrated Schottky diode in high voltage semiconductor device

Gallium nitride semiconductor device with improved termination scheme

Termination structure for gallium nitride Schottky diode

Normally off gallium nitride field effect transistors (FET)

Integrated Schottky diode in high voltage semiconductor device

Termination structure for gallium nitride schottky diode

Integrated Schottky diode in high voltage semiconductor device

Normally off gallium nitride field effect transistors (FET)

Protection circuit including vertical gallium nitride schottky diod...

Normally off gallium nitride field effect transistors (FET)

Vertical gallium nitride Schottky diode

Corner layout for superjunction device

Method for forming termination structure for gallium nitride Schott...

Integrated Schottky diode in high voltage semiconductor device

Vertical gallium nitride Schottky diode

Termination structure for gallium nitride schottky diode

Corner layout for superjunction device

Method for forming gallium nitride semiconductor device with improv...

Method for manufacturing a gallium nitride based semiconductor devi...

Normally off gallium nitride field effect transistors (FET)

Gallium nitride semiconductor device with improved forward conduction

Gallium nitride semiconductor device with improved forward conduction

Gallium nitride heterojunction schottky diode

Patents Applicationslast 30 patents

VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE

TERMINATION STRUCTURE FOR GALLIUM NITRIDE SCHOTTKY DIODE INCLUDING...

NORMALLY OFF GALLIUM NITRIDE FIELD EFFECT TRANSISTORS (FET)

INTEGRATED SCHOTTKY DIODE IN HIGH VOLTAGE SEMICONDUCTOR DEVICE

GALLIUM NITRIDE SEMICONDUCTOR DEVICE WITH IMPROVED TERMINATION SCHEME

TERMINATION STRUCTURE FOR GALLIUM NITRIDE SCHOTTKY DIODE

INTEGRATED SCHOTTKY DIODE IN HIGH VOLTAGE SEMICONDUCTOR DEVICE

NORMALLY OFF GALLIUM NITRIDE FIELD EFFECT TRANSISTORS (FET)

NORMALLY OFF GALLIUM NITRIDE FIELD EFFECT TRANSISTORS (FET)

Termination structure for gallium nitride schottky diode

INTEGRATED SCHOTTKY DIODE IN HIGH VOLTAGE SEMICONDUCTOR DEVICE

PROTECTION CIRCUIT INCLUDING VERTICAL GALLIUM NITRIDE SCHOTTKY DIO...

METHOD FOR FORMING TERMINATION STRUCTURE FOR GALLIUM NITRIDE SCHOTT...

VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE

GALLIUM NITRIDE SEMICONDUCTOR DEVICE WITH IMPROVED TERMINATION SCHEME

NORMALLY OFF GALLIUM NITRIDE FIELD EFFECT TRANSISTORS (FET)

CORNER LAYOUT FOR SUPERJUNCTION DEVICE

Vertical Gallium Nitride Schottky Diode

Termination Structure for Gallium Nitride Schottky Diode

Method For Forming Gallium Nitride Semiconductor Device With Improv...

Gallium Nitride Semiconductor Device With Improved Forward Conduction

CORNER LAYOUT FOR SUPERJUNCTION DEVICE

Gallium nitride semiconductor device with improved termination scheme

Normally off gallium nitride field effect transistors (FET)

Integrated schottky diode in high voltage semiconductor device

Gallium Nitride Heterojunction Schottky Diode

Gallium Nitride Semiconductor Device With Improved Forward Conduction