Tingting GAO

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory devices with channel structures having plu...
- Patent number 12,089,405
- Issue date Sep 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wanbo Geng
Information Patent Grant
Three-dimensional memory devices with channel structures having plu...
- Patent number 12,052,865
- Issue date Jul 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Tingting Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-step L-shaped selective epitaxial growth
- Patent number 12,052,866
- Issue date Jul 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wanbo Geng
Information Patent Grant
Channel structures having protruding portions in three-dimensional...
- Patent number 12,035,524
- Issue date Jul 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wanbo Geng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel structures having protruding portions in three-dimensional...
- Patent number 11,925,019
- Issue date Mar 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wanbo Geng
Information Patent Grant
Channel structures having protruding portions in three-dimensional...
- Patent number 11,917,823
- Issue date Feb 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wanbo Geng
Information Patent Grant
Methods for forming three-dimensional memory devices with channel s...
- Patent number 11,877,449
- Issue date Jan 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wanbo Geng
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 11,751,385
- Issue date Sep 5, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jiaqian Xue
Information Patent Grant
Three-dimensional NAND memory device with split gates
- Patent number 11,716,847
- Issue date Aug 1, 2023
- Yangtze Memory Technologies Co., Ltd.
- Tingting Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method for forming the same
- Patent number 11,563,021
- Issue date Jan 24, 2023
- Yangtze Memory Technologies Co., Ltd.
- Bo Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE, DICING METHOD THEREOF, AND MEMORY
- Publication number 20240379578
- Publication date Nov 14, 2024
- Yangtze Memory Technologies Co., Ltd.
- Dongyu Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL (3D) MEMORY DEVICE AND FABRICATION METHOD
- Publication number 20240215237
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yi YANG
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE, MANUFACTURING METHOD THEREOF, AND...
- Publication number 20240130120
- Publication date Apr 18, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jiayi Liu
Information Patent Application
THREE-DIMENSIONAL MEMORY DEIVCE, MANUFACTURING METHOD THEREOF, AND...
- Publication number 20240130129
- Publication date Apr 18, 2024
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Jiayi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE, MANUFACTURING METHOD THEREOF, AND...
- Publication number 20240130130
- Publication date Apr 18, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jiayi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240099008
- Publication date Mar 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Tingting GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240081069
- Publication date Mar 7, 2024
- Yangtze Memory Technologies Co., Ltd.
- Tingting GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES AND METHODS...
- Publication number 20230276623
- Publication date Aug 31, 2023
- Yangtze Memory Technologies Co., Ltd.
- Xiaolong Du
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORIES AND FABRICATION METHODS THEREOF
- Publication number 20230071503
- Publication date Mar 9, 2023
- Yangtze Memory Technologies Co., Ltd.
- Xiaolong Du
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY AND FABRICATION METHOD FOR THE SAME
- Publication number 20220406813
- Publication date Dec 22, 2022
- Yangtze Memory Technologies Co., Ltd.
- Tingting GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH DIVIDED DRAIN SELECT GATE LINE...
- Publication number 20220406795
- Publication date Dec 22, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Tingting GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES AND METHODS...
- Publication number 20220310648
- Publication date Sep 29, 2022
- Yangtze Memory Technologies Co., Ltd.
- Xiaolong Du
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STRUCTURES HAVING PROTRUDING PORTIONS IN THREE-DIMENSIONAL...
- Publication number 20220149070
- Publication date May 12, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Wanbo Geng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STRUCTURES HAVING PROTRUDING PORTIONS IN THREE-DIMENSIONAL...
- Publication number 20220149069
- Publication date May 12, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Wanbo Geng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE WITH SPLIT CHANNEL GATES
- Publication number 20220123004
- Publication date Apr 21, 2022
- Yangtze Memory Technologies Co., Ltd.
- Xiaoxin LIU
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE WITH SPLIT GATES
- Publication number 20220123012
- Publication date Apr 21, 2022
- Yangtze Memory Technologies Co., Ltd.
- Tingting Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH CHANNEL STRUCTURES HAVING PLU...
- Publication number 20220123011
- Publication date Apr 21, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Tingting Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION TH...
- Publication number 20220123013
- Publication date Apr 21, 2022
- Yangtze Memory Technologies Co., Ltd.
- Tingting Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH CHANNEL STRUCTURES HAVING PLU...
- Publication number 20220123010
- Publication date Apr 21, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Tingting Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STRUCTURES HAVING PROTRUDING PORTIONS IN THREE-DIMENSIONAL...
- Publication number 20220085055
- Publication date Mar 17, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Wanbo Geng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-STEP L-SHAPED SELECTIVE EPITAXIAL GROWTH
- Publication number 20220028883
- Publication date Jan 27, 2022
- Yangtze Memory Technologies Co., Ltd.
- Wanbo GENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH CHANNEL STRUCTURES HAVING PLU...
- Publication number 20220013536
- Publication date Jan 13, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Wanbo Geng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICES WITH CHANNEL S...
- Publication number 20220013537
- Publication date Jan 13, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Wanbo Geng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20210296336
- Publication date Sep 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jiaqian XUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20210265364
- Publication date Aug 26, 2021
- Yangtze Memory Technologies Co., Ltd.
- Bo HUANG
- H01 - BASIC ELECTRIC ELEMENTS

Tingting GAO

Person

Patents Grantslast 30 patents

Three-dimensional memory devices with channel structures having plu...

Three-dimensional memory devices with channel structures having plu...

Two-step L-shaped selective epitaxial growth

Channel structures having protruding portions in three-dimensional...

Channel structures having protruding portions in three-dimensional...

Channel structures having protruding portions in three-dimensional...

Methods for forming three-dimensional memory devices with channel s...

Three-dimensional memory devices and fabricating methods thereof

Three-dimensional NAND memory device with split gates

Memory device and method for forming the same

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE, DICING METHOD THEREOF, AND MEMORY

THREE DIMENSIONAL (3D) MEMORY DEVICE AND FABRICATION METHOD

THREE-DIMENSIONAL MEMORY DEVICE, MANUFACTURING METHOD THEREOF, AND...

THREE-DIMENSIONAL MEMORY DEIVCE, MANUFACTURING METHOD THEREOF, AND...

THREE-DIMENSIONAL MEMORY DEVICE, MANUFACTURING METHOD THEREOF, AND...

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF FORMING THE SAME

CHANNEL STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES AND METHODS...

THREE-DIMENSIONAL MEMORIES AND FABRICATION METHODS THEREOF

THREE-DIMENSIONAL MEMORY AND FABRICATION METHOD FOR THE SAME

THREE-DIMENSIONAL MEMORY DEVICE WITH DIVIDED DRAIN SELECT GATE LINE...

CHANNEL STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES AND METHODS...

CHANNEL STRUCTURES HAVING PROTRUDING PORTIONS IN THREE-DIMENSIONAL...

CHANNEL STRUCTURES HAVING PROTRUDING PORTIONS IN THREE-DIMENSIONAL...

THREE-DIMENSIONAL NAND MEMORY DEVICE WITH SPLIT CHANNEL GATES

THREE-DIMENSIONAL NAND MEMORY DEVICE WITH SPLIT GATES

THREE-DIMENSIONAL MEMORY DEVICES WITH CHANNEL STRUCTURES HAVING PLU...

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION TH...

THREE-DIMENSIONAL MEMORY DEVICES WITH CHANNEL STRUCTURES HAVING PLU...

CHANNEL STRUCTURES HAVING PROTRUDING PORTIONS IN THREE-DIMENSIONAL...

TWO-STEP L-SHAPED SELECTIVE EPITAXIAL GROWTH

THREE-DIMENSIONAL MEMORY DEVICES WITH CHANNEL STRUCTURES HAVING PLU...

METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICES WITH CHANNEL S...

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

MEMORY DEVICE AND METHOD FOR FORMING THE SAME