Tobias Letz

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Enhancing adhesion of interlayer dielectric materials of semiconduc...
- Patent number 8,859,398
- Issue date Oct 14, 2014
- GLOBALFOUNDRIES Inc.
- Tobias Letz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for forming a passivation layer without a terminal metal
- Patent number 8,841,140
- Issue date Sep 23, 2014
- Advanced Micro Devices, Inc.
- Tobias Letz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing copper defects during a wet chemical cleaning of exposed c...
- Patent number 8,673,087
- Issue date Mar 18, 2014
- Advanced Micro Devices, Inc.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing contamination by providing an etch stop layer at...
- Patent number 8,426,312
- Issue date Apr 23, 2013
- GLOBALFOUNDRIES Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test system and method of reducing damage in seed layers in metalli...
- Patent number 8,323,989
- Issue date Dec 4, 2012
- GLOBALFOUNDRIES, INC.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local silicidation of via bottoms in metallization systems of semic...
- Patent number 8,193,086
- Issue date Jun 5, 2012
- GLOBALFOUNDRIES Inc.
- Tobias Letz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising an in-chip active heat transfer system
- Patent number 7,924,569
- Issue date Apr 12, 2011
- Advanced Micro Devices, Inc.
- Tobias Letz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure comprising an electrically conductive featu...
- Patent number 7,879,709
- Issue date Feb 1, 2011
- GLOBALFOUNDRIES Inc.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing a passivation layer prior to depositing a barri...
- Patent number 7,820,536
- Issue date Oct 26, 2010
- Advanced Micro Devices, Inc.
- Holger Schuehrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate having a protection layer at the substrate...
- Patent number 7,781,343
- Issue date Aug 24, 2010
- GLOBALFOUNDRIES Inc.
- Tobias Letz
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ENHANCED ELECTROMIGRATION PERFORMANCE OF COPPER LINES IN METALLIZAT...
- Publication number 20100289125
- Publication date Nov 18, 2010
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST SYSTEM AND METHOD OF REDUCING DAMAGE IN SEED LAYERS IN METALLI...
- Publication number 20100244028
- Publication date Sep 30, 2010
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCING ADHESION OF INTERLAYER DIELECTRIC MATERIALS OF SEMICONDUC...
- Publication number 20100248463
- Publication date Sep 30, 2010
- Tobias Letz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL SILICIDATION OF VIA BOTTOMS IN METALLIZATION SYSTEMS OF SEMIC...
- Publication number 20100164123
- Publication date Jul 1, 2010
- Tobias Letz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING AN IN-CHIP ACTIVE HEAT TRANSFER SYSTEM
- Publication number 20100079959
- Publication date Apr 1, 2010
- Tobias Letz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING COPPER DEFECTS DURING A WET CHEMICAL CLEANING OF EXPOSED C...
- Publication number 20090139543
- Publication date Jun 4, 2009
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE COMPRISING AN ELECTRICALLY CONDUCTIVE FEATU...
- Publication number 20090085145
- Publication date Apr 2, 2009
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A LOCALLY ENHANCED ELECTROMIGRATION RES...
- Publication number 20090032961
- Publication date Feb 5, 2009
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE HAVING A PROTECTION LAYER AT THE SUBSTRATE...
- Publication number 20080132072
- Publication date Jun 5, 2008
- Tobias Letz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR FORMING A PASSIVATION LAYER WITHOUT A TERMINAL METAL
- Publication number 20080102540
- Publication date May 1, 2008
- Tobias Letz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND TEST STRUCTURE FOR ESTIMATING ELECTROMIGRATION EFFECTS C...
- Publication number 20070278484
- Publication date Dec 6, 2007
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REDUCING CONTAMINATION BY PROVIDING AN ETCH STOP LAYER AT...
- Publication number 20070155133
- Publication date Jul 5, 2007
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SEMICONDUCTOR HAVING A COPPER-BASED METALLIZATION STACK WITH A LA...
- Publication number 20070120264
- Publication date May 31, 2007
- Matthias Lehr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REMOVING A PASSIVATION LAYER PRIOR TO DEPOSITING A BARRI...
- Publication number 20070123034
- Publication date May 31, 2007
- Holger Schuehrer
- H01 - BASIC ELECTRIC ELEMENTS

Tobias Letz

Person

Patents Grantslast 30 patents

Enhancing adhesion of interlayer dielectric materials of semiconduc...

Technique for forming a passivation layer without a terminal metal

Reducing copper defects during a wet chemical cleaning of exposed c...

Method of reducing contamination by providing an etch stop layer at...

Test system and method of reducing damage in seed layers in metalli...

Local silicidation of via bottoms in metallization systems of semic...

Semiconductor device comprising an in-chip active heat transfer system

Semiconductor structure comprising an electrically conductive featu...

Method for removing a passivation layer prior to depositing a barri...

Semiconductor substrate having a protection layer at the substrate...

Patents Applicationslast 30 patents

ENHANCED ELECTROMIGRATION PERFORMANCE OF COPPER LINES IN METALLIZAT...

TEST SYSTEM AND METHOD OF REDUCING DAMAGE IN SEED LAYERS IN METALLI...

ENHANCING ADHESION OF INTERLAYER DIELECTRIC MATERIALS OF SEMICONDUC...

LOCAL SILICIDATION OF VIA BOTTOMS IN METALLIZATION SYSTEMS OF SEMIC...

SEMICONDUCTOR DEVICE COMPRISING AN IN-CHIP ACTIVE HEAT TRANSFER SYSTEM

REDUCING COPPER DEFECTS DURING A WET CHEMICAL CLEANING OF EXPOSED C...

SEMICONDUCTOR STRUCTURE COMPRISING AN ELECTRICALLY CONDUCTIVE FEATU...

SEMICONDUCTOR DEVICE HAVING A LOCALLY ENHANCED ELECTROMIGRATION RES...

SEMICONDUCTOR SUBSTRATE HAVING A PROTECTION LAYER AT THE SUBSTRATE...

TECHNIQUE FOR FORMING A PASSIVATION LAYER WITHOUT A TERMINAL METAL

METHOD AND TEST STRUCTURE FOR ESTIMATING ELECTROMIGRATION EFFECTS C...

METHOD OF REDUCING CONTAMINATION BY PROVIDING AN ETCH STOP LAYER AT...

A SEMICONDUCTOR HAVING A COPPER-BASED METALLIZATION STACK WITH A LA...

METHOD FOR REMOVING A PASSIVATION LAYER PRIOR TO DEPOSITING A BARRI...