Tobias Wikstroem

Person

Egliswil, CH

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device comprising a thyristor and a bipolar jun...
- Patent number 12,148,818
- Issue date Nov 19, 2024
- HITACHI ENERGY LTD
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with free-floating packaging concept
- Patent number 12,094,791
- Issue date Sep 17, 2024
- HITACHI ENERGY LTD
- Jagoda Dobrzynska
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Segmented power diode structure with improved reverse recovery
- Patent number 11,967,638
- Issue date Apr 23, 2024
- HITACHI ENERGY LTD
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated gate-commutated thyristor (IGCT)
- Patent number 11,824,091
- Issue date Nov 21, 2023
- Hitachi Energy Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switching device
- Patent number 10,892,245
- Issue date Jan 12, 2021
- ABB Power Grids Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switching device with gate connection
- Patent number 8,519,433
- Issue date Aug 27, 2013
- ABB Research Ltd.
- Didier Cottet
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING A SEMICONDUCTOR DEVICE
- Publication number 20250015172
- Publication date Jan 9, 2025
- Hitachi Energy Ltd
- Tobias WIKSTROEM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Turn-Off Power Semiconductor Device with Gate Runners
- Publication number 20230136897
- Publication date May 4, 2023
- Hitachi Energy Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Comprising a Thyristor and a Bipolar Jun...
- Publication number 20230118951
- Publication date Apr 20, 2023
- Hitachi Energy Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Gate-Commutated Thyristor (IGCT)
- Publication number 20230111333
- Publication date Apr 13, 2023
- Hitachi Energy Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reverse Conducting Power Semiconductor Device and Method for Manufa...
- Publication number 20230046742
- Publication date Feb 16, 2023
- Hitachi Energy Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Segmented Power Diode Structure with Improved Reverse Recovery
- Publication number 20220181473
- Publication date Jun 9, 2022
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Free-Floating Packaging Concept
- Publication number 20210384091
- Publication date Dec 9, 2021
- ABB Power Grids Switzerland AG
- Jagoda Dobrzynska
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SWITCHING DEVICE
- Publication number 20190363065
- Publication date Nov 28, 2019
- ABB Schweiz AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE
- Publication number 20100301384
- Publication date Dec 2, 2010
- ABB TECHNOLOGY AG
- Iulian NISTOR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Switching Device with Gate Connection
- Publication number 20100270584
- Publication date Oct 28, 2010
- ABB Research Ltd
- Didier Cottet
- H01 - BASIC ELECTRIC ELEMENTS

Tobias Wikstroem

Person

Patents Grantslast 30 patents

Power semiconductor device comprising a thyristor and a bipolar jun...

Power semiconductor device with free-floating packaging concept

Segmented power diode structure with improved reverse recovery

Integrated gate-commutated thyristor (IGCT)

Semiconductor switching device

Semiconductor switching device with gate connection

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING A SEMICONDUCTOR DEVICE

Turn-Off Power Semiconductor Device with Gate Runners

Power Semiconductor Device Comprising a Thyristor and a Bipolar Jun...

Integrated Gate-Commutated Thyristor (IGCT)

Reverse Conducting Power Semiconductor Device and Method for Manufa...

Segmented Power Diode Structure with Improved Reverse Recovery

Power Semiconductor Device with Free-Floating Packaging Concept

SEMICONDUCTOR SWITCHING DEVICE

DIODE

Semiconductor Switching Device with Gate Connection