Tohru NAKAMURA

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor multilayer structure and method of manufacturing the...
- Patent number 9,899,570
- Issue date Feb 20, 2018
- Sumitomo Chemical Company, Limited
- Naoki Kaneda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated optical waveguide device
- Patent number 5,604,835
- Issue date Feb 18, 1997
- Hitachi, Ltd.
- Tohru Nakamura
- G02 - OPTICS
Information Patent Grant
Semiconductor device for SOI structure having lead conductor suitab...
- Patent number 5,424,575
- Issue date Jun 13, 1995
- Hitachi, Ltd.
- Katsuyoshi Washio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Impurity diffusion method
- Patent number 5,387,545
- Issue date Feb 7, 1995
- Hitachi, Ltd.
- Yukihiro Kiyota
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device
- Patent number 5,324,983
- Issue date Jun 28, 1994
- Hitachi, Ltd.
- Takahiro Onai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor bipolar transistor with concentric regions
- Patent number 5,237,200
- Issue date Aug 17, 1993
- Hitachi, Ltd.
- Mitsuo Nanba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycrystalline silicon resistor for use in a semiconductor integra...
- Patent number 5,214,497
- Issue date May 25, 1993
- Hitachi, Ltd.
- Mitsuo Nanba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor cell memory with current sensing
- Patent number 5,163,022
- Issue date Nov 10, 1992
- Hitachi, Ltd.
- Noriyuki Homma
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with optimal distance between emitter and tren...
- Patent number 5,109,263
- Issue date Apr 28, 1992
- Hitachi, Ltd.
- Mitsuo Nanba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a bipolar transistor
- Patent number 5,061,645
- Issue date Oct 29, 1991
- Hitachi, Ltd.
- Kazuo Nakazato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making polysilicon contacts to IC mesas
- Patent number 5,019,523
- Issue date May 28, 1991
- Hitachi, Ltd.
- Tohru Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation-hardened semiconductor device with surface layer
- Patent number 4,998,155
- Issue date Mar 5, 1991
- Director-General of the Agency of Industrial Science and Technology
- Kikuo Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with buried side contact
- Patent number 4,984,048
- Issue date Jan 8, 1991
- Hitachi, Ltd.
- Kazuhiko Sagara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation resistant bipolar memory
- Patent number 4,958,320
- Issue date Sep 18, 1990
- Hitachi, Ltd.
- Noriyuki Homma
- G11 - INFORMATION STORAGE
Information Patent Grant
Radiation resistant bipolar memory
- Patent number 4,956,688
- Issue date Sep 11, 1990
- Hitachi, Ltd.
- Noriyuki Honma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor having side wall base and collector contacts
- Patent number 4,949,151
- Issue date Aug 14, 1990
- Hitachi, Ltd.
- Masatada Horiuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilon contacts to IC mesas
- Patent number 4,933,737
- Issue date Jun 12, 1990
- Hitachi, Ltd.
- Tohru Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,926,235
- Issue date May 15, 1990
- Yoichi Tamaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,905,078
- Issue date Feb 27, 1990
- Hitachi, Ltd.
- Kazuhiko Sagara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device in which electrodes are formed in a self-align...
- Patent number 4,887,145
- Issue date Dec 12, 1989
- Hitachi, Ltd.
- Katsuyoshi Washio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,860,086
- Issue date Aug 22, 1989
- Hitachi, Ltd.
- Tohru Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation resistant bipolar memory
- Patent number 4,858,184
- Issue date Aug 15, 1989
- Hitachi, Ltd.
- Noriyuki Homma
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 4,829,361
- Issue date May 9, 1989
- Hitachi, Ltd.
- Kazuhiko Sagara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with sidewall bare contact structure
- Patent number 4,825,281
- Issue date Apr 25, 1989
- Hitachi, Ltd.
- Kazuo Nakazato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a PN junction formed on an insulator film
- Patent number 4,819,055
- Issue date Apr 4, 1989
- Hitachi, Ltd.
- Kazuo Nakazato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,812,894
- Issue date Mar 14, 1989
- Hitachi, Ltd.
- Tohru Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor and method of producing the same
- Patent number 4,769,687
- Issue date Sep 6, 1988
- Hitachi, Ltd.
- Kazuo Nakazato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
I.sup.2 L Memory with nonvolatile storage
- Patent number 4,429,326
- Issue date Jan 31, 1984
- Hitachi, Ltd.
- Tomoyuki Watanabe
- G11 - INFORMATION STORAGE
Information Patent Grant
Differential current amplifier
- Patent number 4,258,330
- Issue date Mar 24, 1981
- Hitachi, Ltd.
- Kenji Kaneko
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
IIL With in and outdiffused emitter pocket
- Patent number 4,258,379
- Issue date Mar 24, 1981
- Hitachi, Ltd.
- Tomoyuki Watanabe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR MULTILAYER STRUCTURE AND METHOD OF MANUFACTURING THE...
- Publication number 20170141270
- Publication date May 18, 2017
- Sumitomo Chemical Company, Limited
- Naoki KANEDA
- H01 - BASIC ELECTRIC ELEMENTS

Tohru NAKAMURA

Person

Patents Grantslast 30 patents

Semiconductor multilayer structure and method of manufacturing the...

Integrated optical waveguide device

Semiconductor device for SOI structure having lead conductor suitab...

Impurity diffusion method

Semiconductor device

Semiconductor bipolar transistor with concentric regions

Polycrystalline silicon resistor for use in a semiconductor integra...

Semiconductor cell memory with current sensing

Semiconductor device with optimal distance between emitter and tren...

Method of manufacturing a bipolar transistor

Process for making polysilicon contacts to IC mesas

Radiation-hardened semiconductor device with surface layer

Semiconductor device with buried side contact

Radiation resistant bipolar memory

Radiation resistant bipolar memory

Bipolar transistor having side wall base and collector contacts

Polysilon contacts to IC mesas

Semiconductor device

Semiconductor device

Semiconductor device in which electrodes are formed in a self-align...

Semiconductor device

Radiation resistant bipolar memory

Semiconductor device

Bipolar transistor with sidewall bare contact structure

Semiconductor device having a PN junction formed on an insulator film

Semiconductor device

Lateral bipolar transistor and method of producing the same

I.sup.2 L Memory with nonvolatile storage

Differential current amplifier

IIL With in and outdiffused emitter pocket

Patents Applicationslast 30 patents

SEMICONDUCTOR MULTILAYER STRUCTURE AND METHOD OF MANUFACTURING THE...