Tom Herrmann

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Asymmetric FET for FDSOI devices
- Patent number 11,929,433
- Issue date Mar 12, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ignasi Cortes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure including transistor using buried insulator layer as gate...
- Patent number 11,837,605
- Issue date Dec 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Tom Herrmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating-gate devices in high voltage applications
- Patent number 11,610,999
- Issue date Mar 21, 2023
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-trapping sidewall spacer-type non-volatile memory device and...
- Patent number 11,315,949
- Issue date Apr 26, 2022
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Tom Herrmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric FET for FDSOI devices
- Patent number 11,245,032
- Issue date Feb 8, 2022
- GLOBALFOUNDRIES U.S. INC.
- Ignasi Cortes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally double diffused metal oxide semiconductor (LDMOS) device...
- Patent number 10,930,777
- Issue date Feb 23, 2021
- GLOBALFOUNDRIES U.S. INC.
- Ignasi Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried-channel low noise transistors and methods of making such dev...
- Patent number 10,644,152
- Issue date May 5, 2020
- GLOBALFOUNDRIES Inc.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor element with reduced lateral electrical field
- Patent number 10,580,863
- Issue date Mar 3, 2020
- GLOBALFOUNDRIES Inc.
- Damien Angot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully depleted silicon on insulator (FDSOI) lateral double-diffused...
- Patent number 10,497,803
- Issue date Dec 3, 2019
- GLOBALFOUNDRIES Inc.
- Ignasi Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin body field effect transistor including a counter-doped channel...
- Patent number 10,283,642
- Issue date May 7, 2019
- GLOBALFOUNDRIES Inc.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitive structure in a semiconductor device having reduced capac...
- Patent number 10,283,584
- Issue date May 7, 2019
- GLOBALFOUNDRIES Inc.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor structure with high resistance based on very thin semicond...
- Patent number 10,121,846
- Issue date Nov 6, 2018
- GLOBALFOUNDRIES Inc.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including a nonvolatile memory cell and met...
- Patent number 9,711,513
- Issue date Jul 18, 2017
- GLOBALFOUNDRIES Inc.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method including a formation of a control gate of a nonvolatile mem...
- Patent number 9,583,640
- Issue date Feb 28, 2017
- GLOBALFOUNDRIES Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain engineering in three-dimensional transistors based on strain...
- Patent number 8,941,187
- Issue date Jan 27, 2015
- GLOBALFOUNDRIES Inc.
- Tim Baldauf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment in a fin transistor by corner implanta...
- Patent number 8,916,928
- Issue date Dec 23, 2014
- GLOBALFOUNDRIES Inc.
- Tim Baldauf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having protruding source and drain regions and...
- Patent number 8,912,606
- Issue date Dec 16, 2014
- GLOBALFOUNDRIES Inc.
- Tim Baldauf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stabilized metal silicides in silicon-germanium regions of transist...
- Patent number 8,859,408
- Issue date Oct 14, 2014
- GLOBALFOUNDRIES Inc.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment in a Fin transistor by corner implanta...
- Patent number 8,580,643
- Issue date Nov 12, 2013
- GLOBALFOUNDRIES Inc.
- Tim Baldauf
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE WITH BACK-GATE HAVING OPPOSITELY DOPED SEMICONDUCTOR REGIONS
- Publication number 20240170576
- Publication date May 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Zhixing Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE INCLUDING TRANSISTOR USING BURIED INSULATOR LAYER AS GATE...
- Publication number 20240055434
- Publication date Feb 15, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Tom Herrmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE-TRAPPING SIDEWALL SPACER-TYPE NON-VOLATILE MEMORY DEVICE AND...
- Publication number 20220085054
- Publication date Mar 17, 2022
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Tom Herrmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC FET FOR FDSOI DEVICES
- Publication number 20220069125
- Publication date Mar 3, 2022
- GLOBALFOUNDRIES U.S. Inc.
- IGNASI CORTES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING-GATE DEVICES IN HIGH VOLTAGE APPLICATIONS
- Publication number 20210391457
- Publication date Dec 16, 2021
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Alban ZAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC FET FOR FDSOI DEVICES
- Publication number 20200321466
- Publication date Oct 8, 2020
- GLOBALFOUNDRIES INC.
- IGNASI CORTES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS) DEVICE...
- Publication number 20190157451
- Publication date May 23, 2019
- GLOBALFOUNDRIES INC.
- Ignasi Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR ELEMENT WITH REDUCED LATERAL ELECTRICAL FIELD
- Publication number 20190109192
- Publication date Apr 11, 2019
- GLOBALFOUNDRIES INC.
- Damien Angot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY DEPLETED SILICON ON INSULATOR (FDSOI) LATERAL DOUBLE-DIFFUSED...
- Publication number 20190051747
- Publication date Feb 14, 2019
- GLOBALFOUNDRIES INC.
- Ignasi CORTES MAYOL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITIVE STRUCTURE IN A SEMICONDUCTOR DEVICE HAVING REDUCED CAPAC...
- Publication number 20180090558
- Publication date Mar 29, 2018
- GLOBALFOUNDRIES INC.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING A NONVOLATILE MEMORY CELL AND MET...
- Publication number 20170047336
- Publication date Feb 16, 2017
- GLOBALFOUNDRIES INC.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A VERTICAL NA...
- Publication number 20140206157
- Publication date Jul 24, 2014
- GLOBALFOUNDRIES INC.
- Tim Baldauf
- B82 - NANO-TECHNOLOGY
Information Patent Application
THRESHOLD VOLTAGE ADJUSTMENT IN A FIN TRANSISTOR BY CORNER IMPLANTA...
- Publication number 20140027825
- Publication date Jan 30, 2014
- GLOBALFOUNDRIES INC.
- Tim Baldauf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING PROTRUDING SOURCE AND DRAIN REGIONS AND...
- Publication number 20130277746
- Publication date Oct 24, 2013
- GLOBALFOUNDRIES INC.
- Tim Baldauf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE STEP IMPLANT PROCESS FOR FORMING SOURCE/DRAIN REGIONS ON S...
- Publication number 20130230948
- Publication date Sep 5, 2013
- GLOBALFOUNDRIES INC.
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strain Engineering in Three-Dimensional Transistors Based on Strain...
- Publication number 20130181299
- Publication date Jul 18, 2013
- GLOBALFOUNDRIES INC.
- Tim Baldauf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Threshold Voltage Adjustment in a Fin Transistor by Corner Implanta...
- Publication number 20130049121
- Publication date Feb 28, 2013
- GLOBALFOUNDRIES INC.
- Tim Baldauf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stabilized Metal Silicides in Silicon-Germanium Regions of Transist...
- Publication number 20120261725
- Publication date Oct 18, 2012
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS

Tom Herrmann

Person

Patents Grantslast 30 patents

Asymmetric FET for FDSOI devices

Structure including transistor using buried insulator layer as gate...

Floating-gate devices in high voltage applications

Charge-trapping sidewall spacer-type non-volatile memory device and...

Asymmetric FET for FDSOI devices

Laterally double diffused metal oxide semiconductor (LDMOS) device...

Buried-channel low noise transistors and methods of making such dev...

Transistor element with reduced lateral electrical field

Fully depleted silicon on insulator (FDSOI) lateral double-diffused...

Thin body field effect transistor including a counter-doped channel...

Capacitive structure in a semiconductor device having reduced capac...

Resistor structure with high resistance based on very thin semicond...

Semiconductor structure including a nonvolatile memory cell and met...

Method including a formation of a control gate of a nonvolatile mem...

Strain engineering in three-dimensional transistors based on strain...

Threshold voltage adjustment in a fin transistor by corner implanta...

Integrated circuits having protruding source and drain regions and...

Stabilized metal silicides in silicon-germanium regions of transist...

Threshold voltage adjustment in a Fin transistor by corner implanta...

Patents Applicationslast 30 patents

STRUCTURE WITH BACK-GATE HAVING OPPOSITELY DOPED SEMICONDUCTOR REGIONS

STRUCTURE INCLUDING TRANSISTOR USING BURIED INSULATOR LAYER AS GATE...

CHARGE-TRAPPING SIDEWALL SPACER-TYPE NON-VOLATILE MEMORY DEVICE AND...

ASYMMETRIC FET FOR FDSOI DEVICES

FLOATING-GATE DEVICES IN HIGH VOLTAGE APPLICATIONS

ASYMMETRIC FET FOR FDSOI DEVICES

LATERALLY DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS) DEVICE...

TRANSISTOR ELEMENT WITH REDUCED LATERAL ELECTRICAL FIELD

FULLY DEPLETED SILICON ON INSULATOR (FDSOI) LATERAL DOUBLE-DIFFUSED...

CAPACITIVE STRUCTURE IN A SEMICONDUCTOR DEVICE HAVING REDUCED CAPAC...

SEMICONDUCTOR STRUCTURE INCLUDING A NONVOLATILE MEMORY CELL AND MET...

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A VERTICAL NA...

THRESHOLD VOLTAGE ADJUSTMENT IN A FIN TRANSISTOR BY CORNER IMPLANTA...

INTEGRATED CIRCUITS HAVING PROTRUDING SOURCE AND DRAIN REGIONS AND...

MULTIPLE STEP IMPLANT PROCESS FOR FORMING SOURCE/DRAIN REGIONS ON S...

Strain Engineering in Three-Dimensional Transistors Based on Strain...

Threshold Voltage Adjustment in a Fin Transistor by Corner Implanta...

Stabilized Metal Silicides in Silicon-Germanium Regions of Transist...