Tomiyuki Arajawa

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming a nitrided silicon dioxide (SiO.sub.x N.sub.y) film
- Patent number 5,198,392
- Issue date Mar 30, 1993
- Oki Electric Industry Co., Ltd.
- Hisashi Fukuda
- H01 - BASIC ELECTRIC ELEMENTS