Tomoaki Furusho

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide substrate, method for manufacturing silicon carbide...
- Patent number 11,094,835
- Issue date Aug 17, 2021
- Mitsubishi Electric Corporation
- Tomoaki Furusho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial wafer and semiconductor device
- Patent number 8,916,880
- Issue date Dec 23, 2014
- Mitsubishi Electric Corporation
- Kenichi Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide epitaxial wafer
- Patent number 8,679,952
- Issue date Mar 25, 2014
- Mitsubishi Electric Corporation
- Nobuyuki Tomita
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE...
- Publication number 20200013907
- Publication date Jan 9, 2020
- Mitsubishi Electric Corporation
- Tomoaki FURUSHO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR,...
- Publication number 20130126906
- Publication date May 23, 2013
- Mitsubishi Electric Corporation
- Nobuyuki Tomita
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL WAFER AND SEMICONDUCTOR DEVICE
- Publication number 20130099253
- Publication date Apr 25, 2013
- Mitsubishi Electric Corporation
- Kenichi Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS