Tomoaki Hatayama

Person

Nara, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Epitaxial wafer and method for manufacturing same
- Patent number 10,612,160
- Issue date Apr 7, 2020
- Sumitomo Electric Industries, Ltd
- Taro Nishiguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial wafer and method for manufacturing same
- Patent number 10,472,736
- Issue date Nov 12, 2019
- Sumitomo Electric Industries, Ltd
- Taro Nishiguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide semiconductor with trench gate
- Patent number 10,192,967
- Issue date Jan 29, 2019
- Sumitomo Electric Industries, Ltd
- Yu Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer and method for manufacturing same
- Patent number 9,957,641
- Issue date May 1, 2018
- Sumitomo Electric Industries, Ltd
- Taro Nishiguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing t...
- Patent number 9,293,549
- Issue date Mar 22, 2016
- Sumitomo Electric Industries, Ltd
- Takeyoshi Masuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor element and manufacturing method thereof
- Patent number 9,006,747
- Issue date Apr 14, 2015
- National University Corporation Nara Institute of Science and Technology
- Tomoaki Hatayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device
- Patent number 8,999,854
- Issue date Apr 7, 2015
- Sumitomo Electric Industries, Ltd
- Takeyoshi Masuda
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20220376065
- Publication date Nov 24, 2022
- Sumitomo Electric Industries, Ltd.
- Tomoaki HATAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
- Publication number 20180209064
- Publication date Jul 26, 2018
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20170047415
- Publication date Feb 16, 2017
- Sumitomo Electric Industries, Ltd.
- Yu Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
- Publication number 20160326668
- Publication date Nov 10, 2016
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF
- Publication number 20140203300
- Publication date Jul 24, 2014
- National University Corp. Nara Institute Of Science And Technology
- Tomoaki Hatayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20130183820
- Publication date Jul 18, 2013
- National University Corporation Nara Institute of Science and Technology
- Toru Hiyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20130126904
- Publication date May 23, 2013
- National University Corporation Nara Institute of Science and Technology
- Takeyoshi Masuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20130130482
- Publication date May 23, 2013
- National University Corporation Nara Institute of Science and Technology
- Takeyoshi Masuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130023113
- Publication date Jan 24, 2013
- National University Corporation Nara Institute of Science and Technology
- Takeyoshi Masuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20110175111
- Publication date Jul 21, 2011
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS

Tomoaki Hatayama

Person

Patents Grantslast 30 patents

Epitaxial wafer and method for manufacturing same

Epitaxial wafer and method for manufacturing same

Silicon carbide semiconductor with trench gate

Epitaxial wafer and method for manufacturing same

Silicon carbide semiconductor device and method for manufacturing t...

SiC semiconductor element and manufacturing method thereof

Method for manufacturing silicon carbide semiconductor device

Patents Applicationslast 30 patents

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME

SiC SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE