Tomohiko Ohta

Person

Gunma, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Single-crystal pulling apparatus and single-crystal pulling method
- Patent number 12,227,872
- Issue date Feb 18, 2025
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-crystal pulling apparatus with saddle-shaped superconducting...
- Patent number 12,188,153
- Issue date Jan 7, 2025
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a silicon single crystal doped with nitrogen a...
- Patent number 12,084,788
- Issue date Sep 10, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kosei Sugawara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing silicon single crystal ingot
- Patent number 9,777,394
- Issue date Oct 3, 2017
- Shin-Etsu Handotai Co., Ltd.
- Susumu Sonokawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing direct bonded wafer and direct bonded wafer
- Patent number 7,521,334
- Issue date Apr 21, 2009
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon single crystal wafer, an epitaxial wafer and a method for p...
- Patent number 7,294,196
- Issue date Nov 13, 2007
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing single crystal and single crystal
- Patent number 7,226,507
- Issue date Jun 5, 2007
- Shin-Etsu Handotai Co., Ltd.
- Nobuaki Mitamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Heater for manufacturing a crystal
- Patent number 7,201,801
- Issue date Apr 10, 2007
- Shin-Etsu Handotai Co., Ltd.
- Susumu Sonokawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing silicon single crystal, silicon single crys...
- Patent number 7,179,330
- Issue date Feb 20, 2007
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
SOI wafer and a method for producing an SOI wafer
- Patent number 7,129,123
- Issue date Oct 31, 2006
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon single crystal wafer and method for producing silicon singl...
- Patent number 6,913,646
- Issue date Jul 5, 2005
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer and method for manufacturing the same
- Patent number 6,893,499
- Issue date May 17, 2005
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for producing silicon semiconductor single cry...
- Patent number 6,764,548
- Issue date Jul 20, 2004
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus for growing single crystal, method for producing single c...
- Patent number 6,632,280
- Issue date Oct 14, 2003
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon wafer and method for producing silicon single crystal
- Patent number 6,632,411
- Issue date Oct 14, 2003
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Catch pan for melt leakage in apparatus for pulling single crystal
- Patent number 6,605,152
- Issue date Aug 12, 2003
- Shin-Etsu Handotai Co., Ltd.
- Koji Mizuishi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for preparing silicon single crystal and silicon single crystal
- Patent number 6,592,662
- Issue date Jul 15, 2003
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Epitaxial silicon wafer, method for producing the same and subtrate...
- Patent number 6,565,822
- Issue date May 20, 2003
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer and a method for producing it
- Patent number 6,482,260
- Issue date Nov 19, 2002
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing silicon single crystal and production apparatu...
- Patent number 6,423,285
- Issue date Jul 23, 2002
- Shin-Etsu Handotai Co., Ltd.
- Kirio Itoi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer and method for producing it
- Patent number 6,190,452
- Issue date Feb 20, 2001
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal and method for producing the same
- Patent number 6,156,119
- Issue date Dec 5, 2000
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a silicon single crystal and the silicon singl...
- Patent number 6,153,009
- Issue date Nov 28, 2000
- Shin-Etsu Handotai Co., Ltd.
- Toshiharu Uesugi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing semiconductor silicon single crystal wafer
- Patent number 6,117,231
- Issue date Sep 12, 2000
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for producing crystals by the czochralski meth...
- Patent number 6,071,337
- Issue date Jun 6, 2000
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device and method for producing single crystal
- Patent number 5,972,106
- Issue date Oct 26, 1999
- Shin-Etsu Handotai Co., Ltd.
- Tomohiko Ohta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for manufacturing crystals according to the Czochralski m...
- Patent number 5,948,163
- Issue date Sep 7, 1999
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing single crystal of silicon
- Patent number 5,882,398
- Issue date Mar 16, 1999
- Shin-Etsu Handotai Co., Ltd.
- Susumu Sonokawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for production of single crystal
- Patent number 5,851,283
- Issue date Dec 22, 1998
- Shin-Etsu Handotai Co. Ltd.
- Ryouji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing silicon single crystal
- Patent number 5,766,346
- Issue date Jun 16, 1998
- Shin-Etsu Handotai Co., Ltd.
- Toshirou Hayashi
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SINGLE-CRYSTAL PULLING APPARATUS AND SINGLE-CRYSTAL PULLING METHOD
- Publication number 20230175166
- Publication date Jun 8, 2023
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka TAKANO
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL PULLING APPARATUS AND SINGLE-CRYSTAL PULLING METHOD
- Publication number 20230138632
- Publication date May 4, 2023
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka TAKANO
- C30 - CRYSTAL GROWTH
Information Patent Application
A METHOD FOR PRODUCING A SILICON SINGLE CRYSTAL
- Publication number 20230047427
- Publication date Feb 16, 2023
- Shin-Etsu Handotai Co., Ltd.
- Kosei SUGAWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING SILICON SINGLE CRYSTAL INGOT
- Publication number 20150354089
- Publication date Dec 10, 2015
- Susumu SONOKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Direct Bonded Wafer and Direct Bonded Wafer
- Publication number 20080102603
- Publication date May 1, 2008
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, SILICON SINGLE CRYS...
- Publication number 20070101926
- Publication date May 10, 2007
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing single crystal and single crystal
- Publication number 20060174819
- Publication date Aug 10, 2006
- Shin-Etsu Handotai Co., Ltd.
- Nobuaki Mitamura
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal wafer and epitaxial wafer, and method for pr...
- Publication number 20050252441
- Publication date Nov 17, 2005
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing silicon single crystal and, silicon single cry...
- Publication number 20050160966
- Publication date Jul 28, 2005
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Heater for crystal formation, apparatus for forming crystal and met...
- Publication number 20050081779
- Publication date Apr 21, 2005
- Susumu Sonokawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Soi wafer and method for manufacturing soi wafer
- Publication number 20050064632
- Publication date Mar 24, 2005
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal wafer and method for producing silicon singl...
- Publication number 20030116082
- Publication date Jun 26, 2003
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal wafer and method for manufacturing the same
- Publication number 20030106484
- Publication date Jun 12, 2003
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus and method for producing silicon semiconductor single cry...
- Publication number 20030089300
- Publication date May 15, 2003
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatas For Growing Jingle Crystal, Method For Producing Jingle C...
- Publication number 20030070605
- Publication date Apr 17, 2003
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon wafer and method for producing silicon single crystal
- Publication number 20020157598
- Publication date Oct 31, 2002
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
CATCH PAN FOR MELT LEAKAGE IN APPARATUS FOR PULLING SINGLE CRYSTAL
- Publication number 20020157602
- Publication date Oct 31, 2002
- SHIN-ETSU HANDOTAI CO.
- Koji Mizuishi
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for preparing silicon single crystal and silicon single crystal
- Publication number 20020157600
- Publication date Oct 31, 2002
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal wafer and a method for producing it
- Publication number 20010000093
- Publication date Apr 5, 2001
- Shin-Etsu Handotai Co., Ltd.,
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH

Tomohiko Ohta

Person

Patents Grantslast 30 patents

Single-crystal pulling apparatus and single-crystal pulling method

Single-crystal pulling apparatus with saddle-shaped superconducting...

Method for producing a silicon single crystal doped with nitrogen a...

Method of producing silicon single crystal ingot

Method for producing direct bonded wafer and direct bonded wafer

Silicon single crystal wafer, an epitaxial wafer and a method for p...

Method for producing single crystal and single crystal

Heater for manufacturing a crystal

Method of manufacturing silicon single crystal, silicon single crys...

SOI wafer and a method for producing an SOI wafer

Silicon single crystal wafer and method for producing silicon singl...

Silicon single crystal wafer and method for manufacturing the same

Apparatus and method for producing silicon semiconductor single cry...

Apparatus for growing single crystal, method for producing single c...

Silicon wafer and method for producing silicon single crystal

Catch pan for melt leakage in apparatus for pulling single crystal

Method for preparing silicon single crystal and silicon single crystal

Epitaxial silicon wafer, method for producing the same and subtrate...

Silicon single crystal wafer and a method for producing it

Method for producing silicon single crystal and production apparatu...

Silicon single crystal wafer and method for producing it

Silicon single crystal and method for producing the same

Method for producing a silicon single crystal and the silicon singl...

Method of manufacturing semiconductor silicon single crystal wafer

Apparatus and method for producing crystals by the czochralski meth...

Device and method for producing single crystal

Apparatus for manufacturing crystals according to the Czochralski m...

Method of manufacturing single crystal of silicon

Method and apparatus for production of single crystal

Apparatus for producing silicon single crystal

Patents Applicationslast 30 patents

SINGLE-CRYSTAL PULLING APPARATUS AND SINGLE-CRYSTAL PULLING METHOD

SINGLE-CRYSTAL PULLING APPARATUS AND SINGLE-CRYSTAL PULLING METHOD

A METHOD FOR PRODUCING A SILICON SINGLE CRYSTAL

METHOD OF PRODUCING SILICON SINGLE CRYSTAL INGOT

Method for Producing Direct Bonded Wafer and Direct Bonded Wafer

METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, SILICON SINGLE CRYS...

Method for producing single crystal and single crystal

Silicon single crystal wafer and epitaxial wafer, and method for pr...

Method for producing silicon single crystal and, silicon single cry...

Heater for crystal formation, apparatus for forming crystal and met...

Soi wafer and method for manufacturing soi wafer

Silicon single crystal wafer and method for producing silicon singl...

Silicon single crystal wafer and method for manufacturing the same

Apparatus and method for producing silicon semiconductor single cry...

Apparatas For Growing Jingle Crystal, Method For Producing Jingle C...

Silicon wafer and method for producing silicon single crystal

CATCH PAN FOR MELT LEAKAGE IN APPARATUS FOR PULLING SINGLE CRYSTAL

Method for preparing silicon single crystal and silicon single crystal

Silicon single crystal wafer and a method for producing it