Tomohiko Shibata

Person

Kasuqai City, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Deep ultraviolet light-emitting element
- Patent number 11,251,338
- Issue date Feb 15, 2022
- Dowa Electronics Materials Co., Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep ultraviolet light emitting element and method of manufacturing...
- Patent number 11,201,261
- Issue date Dec 14, 2021
- Dowa Electronics Materials Co., Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride epitaxial substrate and method for manufacturing...
- Patent number 10,727,303
- Issue date Jul 28, 2020
- Dowa Electronics Materials Co., Ltd.
- Tetsuya Ikuta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate for electronic device and method of producing t...
- Patent number 10,388,517
- Issue date Aug 20, 2019
- Dowa Electronics Materials Co., Ltd.
- Tetsuya Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Centrifugal blower and vehicle air conditioner provided with the same
- Patent number 9,470,241
- Issue date Oct 18, 2016
- Mitsubishi Heavy Industries Automotive Thermal Systems Co., Ltd.
- Takayuki Kobayashi
- F04 - POSITIVE DISPLACEMENT MACHINES FOR LIQUIDS PUMPS FOR LIQUIDS OR ELASTIC...
Information Patent Grant
Vehicle air conditioner case
- Patent number 9,272,601
- Issue date Mar 1, 2016
- Mitsubishi Heavy Industries, Ltd.
- Junichiro Hara
- B60 - VEHICLES IN GENERAL
Information Patent Grant
III nitride semiconductor light emitting device and method for manu...
- Patent number 9,263,642
- Issue date Feb 16, 2016
- Dowa Electronics Materials Co., Ltd.
- Tatsunori Toyota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth substrate, semiconductor device, and epitaxial gro...
- Patent number 9,006,865
- Issue date Apr 14, 2015
- Dowa Electronics Materials Co., Ltd.
- Tetsuya Ikuta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate for electronic device comprising a high resista...
- Patent number 8,946,863
- Issue date Feb 3, 2015
- Dowa Electronics Materials Co., Ltd.
- Tetsuya Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride epitaxial laminate substrate
- Patent number 8,847,203
- Issue date Sep 30, 2014
- Dowa Electronics Materials Co, Ltd.
- Tetsuya Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate for electronic device, in which current flows i...
- Patent number 8,710,489
- Issue date Apr 29, 2014
- Dowa Electronics Materials Co., Ltd.
- Tetsuya Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate for electronic device and method of producing t...
- Patent number 8,426,893
- Issue date Apr 23, 2013
- Dowa Electronics Materials Co., Ltd.
- Tetsuya Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate for electronic device and method of producing t...
- Patent number 8,410,472
- Issue date Apr 2, 2013
- Dowa Electronics Materials Co., Ltd.
- Tetsuya Ikuta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optical semiconductor device and method of manufacturing the same
- Patent number 8,227,789
- Issue date Jul 24, 2012
- Riken
- Hideki Hirayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming group-III nitride crystal, layered structure and...
- Patent number 8,039,130
- Issue date Oct 18, 2011
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for fabricating a III-V nitride film
- Patent number 7,955,437
- Issue date Jun 7, 2011
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Tonneau cover unit
- Patent number 7,815,235
- Issue date Oct 19, 2010
- Hayashi Telempu Co., Ltd.
- Hironori Hayashi
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Method of reducing dislocations in group III nitride crystal, and s...
- Patent number 7,771,849
- Issue date Aug 10, 2010
- NGK Insulators, Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming AlGaN crystal layer
- Patent number 7,713,847
- Issue date May 11, 2010
- NGK Insulators, Ltd.
- Kei Kosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving surface flatness of group-III nitride crystal,...
- Patent number 7,687,824
- Issue date Mar 30, 2010
- NGK Insulators, Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming AlGaN crystal layer
- Patent number 7,632,741
- Issue date Dec 15, 2009
- NGK Insulators, Ltd.
- Kei Kosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate, semiconductor element, manufacturing method fo...
- Patent number 7,575,942
- Issue date Aug 18, 2009
- NGK Insulators, Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming group-III nitride crystal, layered structure and...
- Patent number 7,445,672
- Issue date Nov 4, 2008
- NGK Insulators, Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for fabricating a III-V nitride film and a method for fab...
- Patent number 7,438,761
- Issue date Oct 21, 2008
- NGK Insulators, Ltd.
- Tomohiko Shibata
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor light-emitting element
- Patent number RE40485
- Issue date Sep 9, 2008
- NGK Insulators, Ltd.
- Yuji Hori
- 257 - Active solid-state devices
Information Patent Grant
Semiconductor light-emitting element
- Patent number RE40163
- Issue date Mar 25, 2008
- NGK Insulators, Ltd.
- Yuji Hori
- 257 - Active solid-state devices
Information Patent Grant
Semiconductor element
- Patent number 7,067,847
- Issue date Jun 27, 2006
- NGK Isulators, Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for fabricating a III-V nitride film and a method for fab...
- Patent number 7,033,439
- Issue date Apr 25, 2006
- NGK Insulators, Ltd.
- Tomohiko Shibata
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for fabricating a III nitride film, an underlayer for fabric...
- Patent number 6,989,202
- Issue date Jan 24, 2006
- NGK Insulators, Ltd.
- Keiichiro Asai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Substrate for epitaxial growth
- Patent number 6,869,702
- Issue date Mar 22, 2005
- NGK Insulators, Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEEP ULTRAVIOLET LIGHT-EMITTING ELEMENT
- Publication number 20210167250
- Publication date Jun 3, 2021
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Tomohiko SHIBATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP ULTRAVIOLET LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING...
- Publication number 20190393381
- Publication date Dec 26, 2019
- DOWA Electronics Materials Co., Ltd.
- Tomohiko SHIBATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III NITRIDE EPITAXIAL SUBSTRATE AND METHOD OF PRODUCING THE SAME
- Publication number 20150340230
- Publication date Nov 26, 2015
- Tetsuya IKUTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20140209862
- Publication date Jul 31, 2014
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Tetsuya Ikuta
- C30 - CRYSTAL GROWTH
Information Patent Application
CENTRIFUGAL BLOWER AND VEHICLE AIR CONDITIONER PROVIDED WITH THE SAME
- Publication number 20130336819
- Publication date Dec 19, 2013
- MITSUBISHI HEAVY INDUSTRIES AUTOMOTIVE THERMAL SYSTEMS CO., LTD.
- Takayuki Kobayashi
- F04 - POSITIVE DISPLACEMENT MACHINES FOR LIQUIDS PUMPS FOR LIQUIDS OR ELASTIC...
Information Patent Application
III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANU...
- Publication number 20130193471
- Publication date Aug 1, 2013
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Tatsunori Toyota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL GROWTH SUBSTRATE, SEMICONDUCTOR DEVICE, AND EPITAXIAL GRO...
- Publication number 20130087807
- Publication date Apr 11, 2013
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Tetsuya Ikuta
- C30 - CRYSTAL GROWTH
Information Patent Application
VEHICLE AIR-CONDITIONING APPARATUS
- Publication number 20130014913
- Publication date Jan 17, 2013
- Mitsubishi Heavy Industries, Ltd.
- Junichiro Hara
- B60 - VEHICLES IN GENERAL
Information Patent Application
EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING T...
- Publication number 20120273759
- Publication date Nov 1, 2012
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Tetsuya Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE EPITAXIAL LAMINATE SUBSTRATE
- Publication number 20120223328
- Publication date Sep 6, 2012
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Tetsuya Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VEHICLE AIR CONDITIONER
- Publication number 20120199661
- Publication date Aug 9, 2012
- Mitsubishi Heavy Industries, Ltd.
- Junichiro Hara
- B60 - VEHICLES IN GENERAL
Information Patent Application
EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE, IN WHICH CURRENT FLOWS I...
- Publication number 20120168719
- Publication date Jul 5, 2012
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Tetsuya Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING T...
- Publication number 20120153440
- Publication date Jun 21, 2012
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Tetsuya Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING T...
- Publication number 20120091435
- Publication date Apr 19, 2012
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Tetsuya Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING T...
- Publication number 20110298009
- Publication date Dec 8, 2011
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Tetsuya Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING T...
- Publication number 20110240962
- Publication date Oct 6, 2011
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Tetsuya Ikuta
- C30 - CRYSTAL GROWTH
Information Patent Application
Optical Semiconductor Device and Method of Manufacturing the Same
- Publication number 20100219395
- Publication date Sep 2, 2010
- Hideki Hirayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REDUCING DISLOCATIONS IN GROUP III NITRIDE CRYSTAL, AND S...
- Publication number 20090136780
- Publication date May 28, 2009
- NGK Insulators, Ltd.
- Tomohiko SHIBATA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FORMING GROUP-III NITRIDE CRYSTAL, LAYERED STRUCTURE AND...
- Publication number 20090017333
- Publication date Jan 15, 2009
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR FORMING AlGaN CRYSTAL LAYER
- Publication number 20080242060
- Publication date Oct 2, 2008
- NGK Insulators, Ltd.
- Kei Kosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING AlGaN CRYSTAL LAYER
- Publication number 20080233721
- Publication date Sep 25, 2008
- NGK Insulators, Ltd.
- Kei Kosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tonneau cover unit
- Publication number 20080179022
- Publication date Jul 31, 2008
- Hayashi Telempu Co., Ltd.
- Hironori Hayashi
- B60 - VEHICLES IN GENERAL
Information Patent Application
SUBSTRATE FOR FILM GROWTH OF GROUP III NITRIDES, METHOD OF MANUFACT...
- Publication number 20070045662
- Publication date Mar 1, 2007
- DOWA MINING CO., LTD.
- Shigeaki SUMIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming group-III nitride crystal, layered structure and...
- Publication number 20070042571
- Publication date Feb 22, 2007
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial substrate, semiconductor element, manufacturing method fo...
- Publication number 20060255363
- Publication date Nov 16, 2006
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for fabricating a III-V nitride film and a method for fab...
- Publication number 20060150895
- Publication date Jul 13, 2006
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of improving surface flatness of group-III nitride crystal,...
- Publication number 20050287774
- Publication date Dec 29, 2005
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for fabricating a III nitride film, an underlayer for fabric...
- Publication number 20040247947
- Publication date Dec 9, 2004
- NGK Insulators, Ltd.
- Keiichiro Asai
- C30 - CRYSTAL GROWTH
Information Patent Application
Substrate for epitaxial growth
- Publication number 20040131866
- Publication date Jul 8, 2004
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for fabricating a III-V nitride film
- Publication number 20040132298
- Publication date Jul 8, 2004
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH

Tomohiko Shibata

Person

Patents Grantslast 30 patents

Deep ultraviolet light-emitting element

Deep ultraviolet light emitting element and method of manufacturing...

Group III nitride epitaxial substrate and method for manufacturing...

Epitaxial substrate for electronic device and method of producing t...

Centrifugal blower and vehicle air conditioner provided with the same

Vehicle air conditioner case

III nitride semiconductor light emitting device and method for manu...

Epitaxial growth substrate, semiconductor device, and epitaxial gro...

Epitaxial substrate for electronic device comprising a high resista...

Group III nitride epitaxial laminate substrate

Epitaxial substrate for electronic device, in which current flows i...

Epitaxial substrate for electronic device and method of producing t...

Epitaxial substrate for electronic device and method of producing t...

Optical semiconductor device and method of manufacturing the same

Method of forming group-III nitride crystal, layered structure and...

Apparatus for fabricating a III-V nitride film

Tonneau cover unit

Method of reducing dislocations in group III nitride crystal, and s...

Method for forming AlGaN crystal layer

Method of improving surface flatness of group-III nitride crystal,...

Method for forming AlGaN crystal layer

Epitaxial substrate, semiconductor element, manufacturing method fo...

Method of forming group-III nitride crystal, layered structure and...

Apparatus for fabricating a III-V nitride film and a method for fab...

Semiconductor light-emitting element

Semiconductor light-emitting element

Semiconductor element

Apparatus for fabricating a III-V nitride film and a method for fab...

Method for fabricating a III nitride film, an underlayer for fabric...

Substrate for epitaxial growth

Patents Applicationslast 30 patents

DEEP ULTRAVIOLET LIGHT-EMITTING ELEMENT

DEEP ULTRAVIOLET LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING...

III NITRIDE EPITAXIAL SUBSTRATE AND METHOD OF PRODUCING THE SAME

GROUP III NITRIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING...

CENTRIFUGAL BLOWER AND VEHICLE AIR CONDITIONER PROVIDED WITH THE SAME

III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANU...

EPITAXIAL GROWTH SUBSTRATE, SEMICONDUCTOR DEVICE, AND EPITAXIAL GRO...

VEHICLE AIR-CONDITIONING APPARATUS

EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING T...

GROUP III NITRIDE EPITAXIAL LAMINATE SUBSTRATE

VEHICLE AIR CONDITIONER

EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE, IN WHICH CURRENT FLOWS I...

EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING T...

EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING T...

EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING T...

EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING T...

Optical Semiconductor Device and Method of Manufacturing the Same

METHOD OF REDUCING DISLOCATIONS IN GROUP III NITRIDE CRYSTAL, AND S...

METHOD OF FORMING GROUP-III NITRIDE CRYSTAL, LAYERED STRUCTURE AND...

METHOD FOR FORMING AlGaN CRYSTAL LAYER

METHOD FOR FORMING AlGaN CRYSTAL LAYER

Tonneau cover unit

SUBSTRATE FOR FILM GROWTH OF GROUP III NITRIDES, METHOD OF MANUFACT...

Method of forming group-III nitride crystal, layered structure and...

Epitaxial substrate, semiconductor element, manufacturing method fo...

Apparatus for fabricating a III-V nitride film and a method for fab...

Method of improving surface flatness of group-III nitride crystal,...

Method for fabricating a III nitride film, an underlayer for fabric...

Substrate for epitaxial growth

Apparatus for fabricating a III-V nitride film