Tomohiko Sugiyama

Person

Nagoya-City, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Surface-emitting device, vertical external-cavity surface-emitting...
- Patent number 10,541,514
- Issue date Jan 21, 2020
- NGK Insulators, Ltd.
- Yoshitaka Kuraoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite substrate for light-emitting element and production metho...
- Patent number 9,893,234
- Issue date Feb 13, 2018
- NGK Insulators, Ltd.
- Morimichi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride self-supported substrate, light-emitting device and...
- Patent number 9,548,418
- Issue date Jan 17, 2017
- NGK Insulators, Ltd.
- Morimichi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device, HEMT device, and method of manufacturing semi...
- Patent number 9,478,650
- Issue date Oct 25, 2016
- NGK Insulators, Ltd.
- Tomohiko Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride self-supported substrate, light-emitting device and...
- Patent number 9,312,446
- Issue date Apr 12, 2016
- NGK Insulators, Ltd.
- Morimichi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for treating group III nitride substrate and method for manu...
- Patent number 9,196,480
- Issue date Nov 24, 2015
- NGK Insulators, Ltd.
- Yoshitaka Kuraoka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate comprising a superlattice group and method for...
- Patent number 9,090,993
- Issue date Jul 28, 2015
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate for semiconductor element, semiconductor elemen...
- Patent number 9,024,325
- Issue date May 5, 2015
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate for semiconductor device, method for manufactur...
- Patent number 8,853,828
- Issue date Oct 7, 2014
- NGK Insulators, Ltd.
- Shigeaki Sumiya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate for semiconductor device and semiconductor device
- Patent number 8,853,735
- Issue date Oct 7, 2014
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate for semiconductor device, schottky junction str...
- Patent number 8,598,626
- Issue date Dec 3, 2013
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate for semiconductor device, semiconductor device,...
- Patent number 8,410,552
- Issue date Apr 2, 2013
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate for semiconductor device, semiconductor device,...
- Patent number 8,378,386
- Issue date Feb 19, 2013
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GROUP III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE AND BONDED SUBSTRATE
- Publication number 20240379907
- Publication date Nov 14, 2024
- NGK Insulators, Ltd.
- Ayumi SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE AND BONDED SUBSTRATE
- Publication number 20240347674
- Publication date Oct 17, 2024
- NGK Insulators, Ltd.
- Ayumi SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20230352298
- Publication date Nov 2, 2023
- NGK Insulators, Ltd.
- Katsuhiro IMAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Surface-Emitting Device, Vertical External-Cavity Surface-Emitting...
- Publication number 20170250519
- Publication date Aug 31, 2017
- NGK INSULATORS, LTD
- Yoshitaka Kuraoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE FOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHO...
- Publication number 20160293800
- Publication date Oct 6, 2016
- NGK Insulators, Ltd.
- Morimichi WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE SELF-SUPPORTED SUBSTRATE, LIGHT-EMITTING DEVICE AND...
- Publication number 20160172541
- Publication date Jun 16, 2016
- NGK Insulators, Ltd.
- Morimichi WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE SELF-SUPPORTED SUBSTRATE, LIGHT-EMITTING DEVICE AND...
- Publication number 20150144956
- Publication date May 28, 2015
- NGK Insulators, Ltd.
- Morimichi WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Treating Group III Nitride Substrate and Method for Manu...
- Publication number 20150017786
- Publication date Jan 15, 2015
- NGK INSULATORS, LTD
- Yoshitaka Kuraoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Manufacturing Semiconductor Device
- Publication number 20140361337
- Publication date Dec 11, 2014
- NGK INSULATORS, LTD
- Tomohiko SUGIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, HEMT DEVICE, AND METHOD OF MANUFACTURING SEMI...
- Publication number 20140042451
- Publication date Feb 13, 2014
- NGK Insulators, Ltd.
- Tomohiko SUGIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMEN...
- Publication number 20130134439
- Publication date May 30, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
- Publication number 20130032781
- Publication date Feb 7, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20130015466
- Publication date Jan 17, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT, HEMT ELEMENT, AND METHOD OF MANUFACTURING SE...
- Publication number 20120168771
- Publication date Jul 5, 2012
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTUR...
- Publication number 20120126293
- Publication date May 24, 2012
- NGK INSULATORS, LTD
- Shigeaki Sumiya
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SCHOTTKY JUNCTION STR...
- Publication number 20110062493
- Publication date Mar 17, 2011
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...
- Publication number 20110049570
- Publication date Mar 3, 2011
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...
- Publication number 20110049571
- Publication date Mar 3, 2011
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electron-emitting apparatus and method for emitting electrons
- Publication number 20070188418
- Publication date Aug 16, 2007
- NGK Insulators, Ltd.
- Iwao Ohwada
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Application
Electron-emitting apparatus and method for emitting electrons
- Publication number 20060132052
- Publication date Jun 22, 2006
- NGK Insulators, Ltd.
- Iwao Ohwada
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS

Tomohiko Sugiyama

Person

Patents Grantslast 30 patents

Surface-emitting device, vertical external-cavity surface-emitting...

Composite substrate for light-emitting element and production metho...

Gallium nitride self-supported substrate, light-emitting device and...

Semiconductor device, HEMT device, and method of manufacturing semi...

Gallium nitride self-supported substrate, light-emitting device and...

Method for treating group III nitride substrate and method for manu...

Epitaxial substrate comprising a superlattice group and method for...

Epitaxial substrate for semiconductor element, semiconductor elemen...

Epitaxial substrate for semiconductor device, method for manufactur...

Epitaxial substrate for semiconductor device and semiconductor device

Epitaxial substrate for semiconductor device, schottky junction str...

Epitaxial substrate for semiconductor device, semiconductor device,...

Epitaxial substrate for semiconductor device, semiconductor device,...

Patents Applicationslast 30 patents

GROUP III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE AND BONDED SUBSTRATE

GROUP III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE AND BONDED SUBSTRATE

GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE

Surface-Emitting Device, Vertical External-Cavity Surface-Emitting...

COMPOSITE SUBSTRATE FOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHO...

GALLIUM NITRIDE SELF-SUPPORTED SUBSTRATE, LIGHT-EMITTING DEVICE AND...

GALLIUM NITRIDE SELF-SUPPORTED SUBSTRATE, LIGHT-EMITTING DEVICE AND...

Method for Treating Group III Nitride Substrate and Method for Manu...

Semiconductor Device and Method for Manufacturing Semiconductor Device

SEMICONDUCTOR DEVICE, HEMT DEVICE, AND METHOD OF MANUFACTURING SEMI...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMEN...

EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR ELEMENT, HEMT ELEMENT, AND METHOD OF MANUFACTURING SE...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTUR...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SCHOTTKY JUNCTION STR...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...

Electron-emitting apparatus and method for emitting electrons

Electron-emitting apparatus and method for emitting electrons