Tomohiro Hamajima

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Laminated substrate fabricated from semiconductor wafers bonded to...
- Patent number 6,346,435
- Issue date Feb 12, 2002
- NEC Corporation
- Hiroaki Kikuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laminated substrate fabricated from semiconductor wafers bonded to...
- Patent number 6,096,433
- Issue date Aug 1, 2000
- NEC Corporation
- Hiroaki Kikuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer having distortion-free alignment regions
- Patent number 6,013,954
- Issue date Jan 11, 2000
- NEC Corporation
- Tomohiro Hamajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulating substrate
- Patent number 6,004,406
- Issue date Dec 21, 1999
- NEC Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing bonded substrate with silicon-on-insulator stru...
- Patent number 5,985,681
- Issue date Nov 16, 1999
- NEC Corporation
- Tomohiro Hamajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator substrate with improved insulation patterns
- Patent number 5,969,401
- Issue date Oct 19, 1999
- NEC Corporation
- Tomohiro Hamajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a composite silicon-on-insulator substrate
- Patent number 5,869,386
- Issue date Feb 9, 1999
- NEC Corporation
- Tomohiro Hamajima
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Bonded IC substrate with a high breakdown voltage and large current...
- Patent number 5,847,438
- Issue date Dec 8, 1998
- NEC Corporation
- Hiroaki Kikuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process of bonded total dielectric isolation substrate
- Patent number 5,773,352
- Issue date Jun 30, 1998
- NEC Corporation
- Tomohiro Hamajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon on insulating substrate
- Patent number 5,691,231
- Issue date Nov 25, 1997
- NEC Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS

Tomohiro Hamajima

Person

Patents Grantslast 30 patents

Laminated substrate fabricated from semiconductor wafers bonded to...

Laminated substrate fabricated from semiconductor wafers bonded to...

Semiconductor wafer having distortion-free alignment regions

Silicon on insulating substrate

Method of producing bonded substrate with silicon-on-insulator stru...

Silicon on insulator substrate with improved insulation patterns

Method of fabricating a composite silicon-on-insulator substrate

Bonded IC substrate with a high breakdown voltage and large current...

Fabrication process of bonded total dielectric isolation substrate

Method of manufacturing silicon on insulating substrate