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TOMOHIRO KAWASE
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OSAKA, JP
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Patents Grants
last 30 patents
Information
Patent Grant
Crystal and substrate of conductive GaAs, and method for forming th...
Patent number
11,955,251
Issue date
Apr 9, 2024
Sumitomo Electric Industries, Ltd.
Takashi Sakurada
C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information
Patent Grant
Crystal and substrate of conductive GaAs, and method for forming th...
Patent number
11,017,913
Issue date
May 25, 2021
Sumitomo Electric Industries, Ltd.
Takashi Sakurada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Growth container
Patent number
10,533,265
Issue date
Jan 14, 2020
Sumitomo Electric Industries, Ltd.
Takashi Sakurada
C30 - CRYSTAL GROWTH
Information
Patent Grant
Silicon carbide ingot and method for manufacturing silicon carbide...
Patent number
10,427,324
Issue date
Oct 1, 2019
Sumitomo Electric Industries, Ltd.
Tsutomu Hori
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of manufacturing silicon carbide single crystal and silicon...
Patent number
9,799,735
Issue date
Oct 24, 2017
Sumitomo Electric Industries, Ltd.
Tsubasa Honke
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of producing semiconductor single crystal
Patent number
9,797,068
Issue date
Oct 24, 2017
Sumitomo Electric Industries, Ltd.
Takashi Sakurada
C30 - CRYSTAL GROWTH
Information
Patent Grant
Ingot, silicon carbide substrate, and method for producing ingot
Patent number
9,546,437
Issue date
Jan 17, 2017
Sumitomo Electric Industries, Ltd.
Tsutomu Hori
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of manufacturing silicon carbide single crystal and silicon...
Patent number
9,290,860
Issue date
Mar 22, 2016
Sumitomo Electric Industries, Ltd.
Tsubasa Honke
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Method and apparatus for producing semiconductor crystal, and semic...
Patent number
9,187,843
Issue date
Nov 17, 2015
Sumitomo Electric Industries, Ltd.
Takashi Sakurada
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Continuous copper electroplating method
Patent number
8,801,912
Issue date
Aug 12, 2014
C. Uyemura & Co., Ltd.
Naoyuki Omura
H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information
Patent Grant
Group III nitride semiconductor crystal substrate and semiconductor...
Patent number
8,698,282
Issue date
Apr 15, 2014
Sumitomo Electric Industries, Ltd.
Takuji Okahisa
C30 - CRYSTAL GROWTH
Information
Patent Grant
Copper electroplating bath
Patent number
8,679,317
Issue date
Mar 25, 2014
C. Uyemura & Co., Ltd.
Toshihisa Isono
H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information
Patent Grant
AlN crystal and method for growing the same, and AlN crystal substrate
Patent number
8,470,090
Issue date
Jun 25, 2013
Sumitomo Electric Industries, Ltd.
Naho Mizuhara
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
III-nitride single-crystal growth method
Patent number
8,361,226
Issue date
Jan 29, 2013
Sumitomo Electric Industries, Ltd.
Michimasa Miyanaga
C30 - CRYSTAL GROWTH
Information
Patent Grant
III-nitride crystal substrate and III-nitride semiconductor device
Patent number
8,310,030
Issue date
Nov 13, 2012
Sumitomo Electric Industries, Ltd.
Ryu Hirota
C30 - CRYSTAL GROWTH
Information
Patent Grant
Electroless plating solution, method for electroless plating using...
Patent number
8,197,583
Issue date
Jun 12, 2012
C. Uyemura & Co., Ltd.
Teruyuki Hotta
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Electroless plating solution, method for electroless plating using...
Patent number
8,137,447
Issue date
Mar 20, 2012
C. Uyemura & Co., Ltd.
Teruyuki Hotta
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
III-nitride crystal manufacturing method, III-nitride crystal subst...
Patent number
7,998,847
Issue date
Aug 16, 2011
Sumitomo Electric Industries, Ltd.
Ryu Hirota
C30 - CRYSTAL GROWTH
Information
Patent Grant
Continuous copper electroplating method
Patent number
7,988,842
Issue date
Aug 2, 2011
C. Uyemura & Co., Ltd.
Shinji Tachibana
C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information
Patent Grant
Method of preparing a compound semiconductor crystal
Patent number
RE42279
Issue date
Apr 12, 2011
Sumitomo Electric Industries, Ltd.
Tomohiro Kawase
117 - Single-crystal, oriented-crystal, and epitaxy growth processes
Information
Patent Grant
Electrolytic copper plating process
Patent number
7,892,411
Issue date
Feb 22, 2011
C. Uyemura & Co., Ltd.
Shinji Tachibana
H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information
Patent Grant
Method of preparing group III-V compound semiconductor crystal
Patent number
RE41551
Issue date
Aug 24, 2010
Sumitomo Electric Industries, Ltd.
Tomohiro Kawase
117 - Single-crystal, oriented-crystal, and epitaxy growth processes
Information
Patent Grant
Method of preparing a compound semiconductor crystal
Patent number
RE40662
Issue date
Mar 17, 2009
Sumitomo Electric Industries, Ltd.
Tomohiro Kawase
117 - Single-crystal, oriented-crystal, and epitaxy growth processes
Information
Patent Grant
Indium phosphide substrate and indium phosphide monocrystal and met...
Patent number
7,442,355
Issue date
Oct 28, 2008
Sumitomo Electric Industries, Ltd.
Tomohiro Kawase
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of preparing group III-V compound semiconductor crystal
Patent number
RE39778
Issue date
Aug 21, 2007
Sumitomo Electric Industries, Ltd.
Tomohiro Kawase
117 - Single-crystal, oriented-crystal, and epitaxy growth processes
Information
Patent Grant
Electrolytic copper plating bath and plating process therewith
Patent number
7,220,347
Issue date
May 22, 2007
C. Uyemura & Co., Ltd.
Toshihisa Isono
H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information
Patent Grant
Large size semiconductor crystal with low dislocation density
Patent number
6,866,714
Issue date
Mar 15, 2005
Sumitomo Electric Industries, Ltd.
Tomohiro Kawase
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Method for producing a semiconductor crystal
Patent number
6,780,244
Issue date
Aug 24, 2004
Sumitomo Electric Industries, Ltd.
Tomohiro Kawase
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Semiconductor crystal, and method and apparatus of production thereof
Patent number
6,572,700
Issue date
Jun 3, 2003
Sumitomo Electric Industries, Ltd.
Tomohiro Kawase
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Method of preparing a compound semiconductor crystal
Patent number
6,485,563
Issue date
Nov 26, 2002
Sumitomo Electric Industries, Ltd.
Tomohiro Kawase
C30 - CRYSTAL GROWTH
Patents Applications
last 30 patents
Information
Patent Application
CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING TH...
Publication number
20210241934
Publication date
Aug 5, 2021
Sumitomo Electric Industries, Ltd.
Takashi SAKURADA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING TH...
Publication number
20180261354
Publication date
Sep 13, 2018
Sumitomo Electric Industries, Ltd.
Takashi SAKURADA
C30 - CRYSTAL GROWTH
Information
Patent Application
GROWTH CONTAINER
Publication number
20180010262
Publication date
Jan 11, 2018
Sumitomo Electric Industries, Ltd.
Takashi Sakurada
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR MANUFACTURING WIRING SUBSTRATE AND WIRING SUBSTRATE MANU...
Publication number
20170253975
Publication date
Sep 7, 2017
C. Uyemura & Co., Ltd.
Hisamitsu YAMAMOTO
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...
Publication number
20170121844
Publication date
May 4, 2017
Sumitomo Electric Industries, Ltd.
Tomohiro KAWASE
C30 - CRYSTAL GROWTH
Information
Patent Application
SILICON CARBIDE INGOT AND METHOD FOR MANUFACTURING SILICON CARBIDE...
Publication number
20160236375
Publication date
Aug 18, 2016
Sumitomo Electric Industries, Ltd.
Tsutomu HORI
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...
Publication number
20160155808
Publication date
Jun 2, 2016
Sumitomo Electric Industries, Ltd.
Tsubasa HONKE
C30 - CRYSTAL GROWTH
Information
Patent Application
SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURIN...
Publication number
20160138186
Publication date
May 19, 2016
Sumitomo Electric Industries, Ltd.
Tsutomu HORI
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
Publication number
20160083865
Publication date
Mar 24, 2016
Sumitomo Electric Industries, Ltd.
Takashi SAKURADA
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...
Publication number
20150010726
Publication date
Jan 8, 2015
Sumitomo Electric Industries, Ltd.
Tsubasa HONKE
C30 - CRYSTAL GROWTH
Information
Patent Application
INGOT, SILICON CARBIDE SUBSTRATE, AND METHOD FOR PRODUCING INGOT
Publication number
20140295171
Publication date
Oct 2, 2014
Sumitomo Electric Industries, Ltd.
Tsutomu HORI
C30 - CRYSTAL GROWTH
Information
Patent Application
INGOT, SILICON CARBIDE SUBSTRATE, AND METHOD FOR PRODUCING INGOT
Publication number
20140287226
Publication date
Sep 25, 2014
Sumitomo Electric Industries, Ltd.
Tsutomu HORI
C30 - CRYSTAL GROWTH
Information
Patent Application
CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING TH...
Publication number
20130312878
Publication date
Nov 28, 2013
Sumitomo Electric Industries, Ltd.
Takashi SAKURADA
C30 - CRYSTAL GROWTH
Information
Patent Application
MANUFACTURE METHOD OF BUILDUP CIRCUIT BOARD
Publication number
20130056362
Publication date
Mar 7, 2013
C. Uyemura & Co., Ltd.
Shinji TACHIBANA
H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information
Patent Application
METHOD OF PRODUCING SEMICONDUCTOR SINGLE CRYSTAL
Publication number
20130008370
Publication date
Jan 10, 2013
Sumitomo Electric Industries, Ltd.
Takashi Sakurada
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR CRYSTAL, AND SEMIC...
Publication number
20120112135
Publication date
May 10, 2012
Sumitomo Electric Industries, Ltd.
Takashi Sakurada
C30 - CRYSTAL GROWTH
Information
Patent Application
ELECTROLESS PLATING SOLUTION, METHOD FOR ELECTROLESS PLATING USING...
Publication number
20120058254
Publication date
Mar 8, 2012
C. Uyemura & Co., Ltd.
TERUYUKI HOTTA
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Application
CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING TH...
Publication number
20110274879
Publication date
Nov 10, 2011
Sumitomo Electric Industries. Ltd.
Takashi Sakurada
C30 - CRYSTAL GROWTH
Information
Patent Application
III-Nitride Crystal Substrate and III-Nitride Semiconductor Device
Publication number
20110260295
Publication date
Oct 27, 2011
Sumitomo Electric Industries, Ltd.
Ryu Hirota
C30 - CRYSTAL GROWTH
Information
Patent Application
Method for Growing AlxGa1-xN Single Crystal
Publication number
20100307405
Publication date
Dec 9, 2010
Sumitomo Electric Industries, Ltd.
Michimasa Miyanaga
C30 - CRYSTAL GROWTH
Information
Patent Application
COPPER ELECTROPLATING BATH
Publication number
20100219081
Publication date
Sep 2, 2010
C. UYEMURA & CO., LTD
Toshihisa Isono
C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information
Patent Application
AlN Crystal and Method for Growing the Same, and AlN Crystal Substrate
Publication number
20100221539
Publication date
Sep 2, 2010
Sumitomo Electric Industries, Ltd.
Naho Mizuhara
C30 - CRYSTAL GROWTH
Information
Patent Application
Group III Nitride Semiconductor Crystal Substrate and Semiconductor...
Publication number
20100164070
Publication date
Jul 1, 2010
SUMITOMO ELECTRIC INDUSTRIES, LTD.
Takuji Okahisa
C30 - CRYSTAL GROWTH
Information
Patent Application
-Nitride Single-Crystal Growth Method
Publication number
20100147211
Publication date
Jun 17, 2010
Sumitomo Electric Industries, Ltd.
Michimasa Miyanaga
C30 - CRYSTAL GROWTH
Information
Patent Application
ELECTROLESS PLATING SOLUTION, METHOD FOR ELECTROLESS PLATING USING...
Publication number
20100003399
Publication date
Jan 7, 2010
C. Uyemura & Co., Ltd.
TERUYUKI HOTTA
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Application
III-Nitride Crystal Manufacturing Method, III-Nitride Crystal Subst...
Publication number
20090315150
Publication date
Dec 24, 2009
Sumitomo Electric Industries, Ltd.
Ryu Hirota
C30 - CRYSTAL GROWTH
Information
Patent Application
Process for Producing Substrate of AlN Crystal, Method of Growing A...
Publication number
20090280354
Publication date
Nov 12, 2009
Sumitomo Electric Industries, Ltd.
Naho Mizuhara
C30 - CRYSTAL GROWTH
Information
Patent Application
CONTINUOUS COPPER ELECTROPLATING METHOD
Publication number
20090229986
Publication date
Sep 17, 2009
C. Uyemura & Co., Ltd.
Naoyuki OMURA
C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information
Patent Application
GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE AND SEMICONDUCTOR...
Publication number
20090127662
Publication date
May 21, 2009
Sumitomo Electric Industries, Ltd.
Takuji Okahisa
C30 - CRYSTAL GROWTH
Information
Patent Application
GROUP III NITRIDE SEMICONDUCTOR CRYSTAL GROWING METHOD, GROUP III N...
Publication number
20090127664
Publication date
May 21, 2009
Sumitomo Electric Industries, Ltd.
Takuji OKAHISA
H01 - BASIC ELECTRIC ELEMENTS