Tomohisa KATO

Person

Tsukuba-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
n-Type 4H—SiC single crystal substrate and method of producing n-ty...
- Patent number 11,655,561
- Issue date May 23, 2023
- Showa Denko K.K.
- Hiromasa Suo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing p-type 4H-SiC single crystal
- Patent number 11,542,631
- Issue date Jan 3, 2023
- National Institute of Advanced Industrial Science and Technology
- Kazuma Eto
- C30 - CRYSTAL GROWTH
Information Patent Grant
n-Type SiC single crystal substrate, method for producing same and...
- Patent number 10,892,334
- Issue date Jan 12, 2021
- Showa Denko K.K.
- Kazuma Eto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial wafer having a thick silicon carbide laye...
- Patent number 10,879,359
- Issue date Dec 29, 2020
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Keiko Masumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface machining method for single crystal SiC substrate, manufact...
- Patent number 10,453,693
- Issue date Oct 22, 2019
- Showa Denko K.K.
- Takanori Kido
- B24 - GRINDING POLISHING
Information Patent Grant
Epitaxial wafer manufacturing method, epitaxial wafer, semiconducto...
- Patent number 10,354,867
- Issue date Jul 16, 2019
- Fuji Electric Co., Ltd.
- Hidekazu Tsuchida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Surface machining method for single crystal SiC substrate, manufact...
- Patent number 9,960,048
- Issue date May 1, 2018
- Showa Denko K.K.
- Takanori Kido
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide powder and method for producing silicon carbide sin...
- Patent number 9,816,200
- Issue date Nov 14, 2017
- Taiheiyo Cement Corporation
- Kenta Masuda
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Surface machining method for single crystal SiC substrate, manufact...
- Patent number 9,620,374
- Issue date Apr 11, 2017
- Showa Denko K.K.
- Takanori Kido
- B24 - GRINDING POLISHING
Information Patent Grant
Silicon carbide single crystal and manufacturing method of the same
- Patent number 9,053,834
- Issue date Jun 9, 2015
- Denso Corporation
- Fusao Hirose
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for manufacturing single crystal
- Patent number 7,396,411
- Issue date Jul 8, 2008
- Denso Corporation
- Tomohisa Kato
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and apparatus for manufacturing single crystal
- Patent number 7,045,009
- Issue date May 16, 2006
- Denso Corporation
- Tomohisa Kato
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING P-TYPE 4H-SIC SINGLE CRYSTAL
- Publication number 20200325595
- Publication date Oct 15, 2020
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Kazuma ETO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
n-TYPE 4H-SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING n-TY...
- Publication number 20200071849
- Publication date Mar 5, 2020
- SHOWA DENKO K.K.
- Hiromasa SUO
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER AND SILICON CARBIDE SEMICONDUCTOR D...
- Publication number 20190333998
- Publication date Oct 31, 2019
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Keiko MASUMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREOF
- Publication number 20190273136
- Publication date Sep 5, 2019
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Keiko MASUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
n-TYPE SiC SINGLE CRYSTAL SUBSTRATE, METHOD FOR PRODUCING SAME AND...
- Publication number 20190252504
- Publication date Aug 15, 2019
- SHOWA DENKO K.K.
- Kazuma ETO
- C30 - CRYSTAL GROWTH
Information Patent Application
P-TYPE 4H-SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING P-TYPE 4H-SIC...
- Publication number 20180274125
- Publication date Sep 27, 2018
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Kazuma ETO
- C30 - CRYSTAL GROWTH
Information Patent Application
SURFACE MACHINING METHOD FOR SINGLE CRYSTAL SIC SUBSTRATE, MANUFACT...
- Publication number 20180218916
- Publication date Aug 2, 2018
- SHOWA DENKO K.K.
- Takanori KIDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER MANUFACTURING METHOD, EPITAXIAL WAFER, SEMICONDUCTO...
- Publication number 20180012758
- Publication date Jan 11, 2018
- Fuji Electric Co., Ltd.
- Hidekazu TSUCHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE MACHINING METHOD FOR SINGLE CRYSTAL SIC SUBSTRATE, MANUFACT...
- Publication number 20170178919
- Publication date Jun 22, 2017
- SHOWA DENKO K.K.
- Takanori KIDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE POWDER AND METHOD FOR PRODUCING SILICON CARBIDE SIN...
- Publication number 20160160386
- Publication date Jun 9, 2016
- Taiheiyo Cement Corporation
- Kenta MASUDA
- C30 - CRYSTAL GROWTH
Information Patent Application
SURFACE MACHINING METHOD FOR SINGLE CRYSTAL SIC SUBSTRATE, MANUFACT...
- Publication number 20160035579
- Publication date Feb 4, 2016
- SHOWA DENKO K.K.
- Takanori KIDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF THE SAME
- Publication number 20120025153
- Publication date Feb 2, 2012
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Fusao Hirose
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for manufacturing single crystal
- Publication number 20060156971
- Publication date Jul 20, 2006
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Tomohisa Kato
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and apparatus for manufacturing single crystal
- Publication number 20050028725
- Publication date Feb 10, 2005
- DENSO Corporation
- Tomohisa Kato
- C30 - CRYSTAL GROWTH

Tomohisa KATO

Person

Patents Grantslast 30 patents

n-Type 4H—SiC single crystal substrate and method of producing n-ty...

Method for producing p-type 4H-SiC single crystal

n-Type SiC single crystal substrate, method for producing same and...

Silicon carbide epitaxial wafer having a thick silicon carbide laye...

Surface machining method for single crystal SiC substrate, manufact...

Epitaxial wafer manufacturing method, epitaxial wafer, semiconducto...

Surface machining method for single crystal SiC substrate, manufact...

Silicon carbide powder and method for producing silicon carbide sin...

Surface machining method for single crystal SiC substrate, manufact...

Silicon carbide single crystal and manufacturing method of the same

Apparatus for manufacturing single crystal

Method and apparatus for manufacturing single crystal

Patents Applicationslast 30 patents

METHOD FOR PRODUCING P-TYPE 4H-SIC SINGLE CRYSTAL

n-TYPE 4H-SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING n-TY...

SILICON CARBIDE EPITAXIAL WAFER AND SILICON CARBIDE SEMICONDUCTOR D...

SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREOF

n-TYPE SiC SINGLE CRYSTAL SUBSTRATE, METHOD FOR PRODUCING SAME AND...

P-TYPE 4H-SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING P-TYPE 4H-SIC...

SURFACE MACHINING METHOD FOR SINGLE CRYSTAL SIC SUBSTRATE, MANUFACT...

EPITAXIAL WAFER MANUFACTURING METHOD, EPITAXIAL WAFER, SEMICONDUCTO...

SURFACE MACHINING METHOD FOR SINGLE CRYSTAL SIC SUBSTRATE, MANUFACT...

SILICON CARBIDE POWDER AND METHOD FOR PRODUCING SILICON CARBIDE SIN...

SURFACE MACHINING METHOD FOR SINGLE CRYSTAL SIC SUBSTRATE, MANUFACT...

SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF THE SAME

Apparatus for manufacturing single crystal

Method and apparatus for manufacturing single crystal