Tomokazu ISHII

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Susono-shi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Manufacturing apparatus of SiC single crystal and method for manufa...
- Patent number 9,617,655
- Issue date Apr 11, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for production of SiC single crystal
- Patent number 9,322,112
- Issue date Apr 26, 2016
- Toyota Jidosha Kabushiki Kaisha
- Tomokazu Ishii
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL AND METHOD FOR MANUFA...
- Publication number 20130284083
- Publication date Oct 31, 2013
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20120304916
- Publication date Dec 6, 2012
- Toyota Jidosha Kabushiki Kaisha
- Tomokazu Ishii
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR PRODUCTION OF SiC SINGLE CRYSTAL
- Publication number 20120160153
- Publication date Jun 28, 2012
- Tomokazu ISHII
- C30 - CRYSTAL GROWTH