Tomoko Yasunaga

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing semiconductor device having shallow junction
- Patent number 6,218,270
- Issue date Apr 17, 2001
- NEC Corporation
- Tomoko Yasunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of semiconductor device using selective epitaxia...
- Patent number 6,190,976
- Issue date Feb 20, 2001
- NEC Corporation
- Seiichi Shishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a MOS field effect transistor with improved gate...
- Patent number 6,017,823
- Issue date Jan 25, 2000
- NEC Corporation
- Seiichi Shishiguchi
- H01 - BASIC ELECTRIC ELEMENTS