Tomonari Shioda

Person

Kanagawa-ken, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor light emitting device, nitride semiconductor wafer, a...
- Patent number 9,478,706
- Issue date Oct 25, 2016
- Kabushiki Kaisha Toshiba
- Jongil Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device, nitride semiconductor wafer, and meth...
- Patent number 9,312,436
- Issue date Apr 12, 2016
- Kabushiki Kaisha Toshiba
- Hiroshi Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device
- Patent number 9,130,098
- Issue date Sep 8, 2015
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device and semiconductor wafer
- Patent number 9,065,003
- Issue date Jun 23, 2015
- Kabushiki Kaisha Toshiba
- Hisashi Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device
- Patent number 8,987,026
- Issue date Mar 24, 2015
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device, nitride semiconductor wafer and metho...
- Patent number 8,969,891
- Issue date Mar 3, 2015
- Kabushiki Kaisha Toshiba
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device, wafer, and method for manufact...
- Patent number 8,952,401
- Issue date Feb 10, 2015
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor wafer including different lattice constants
- Patent number 8,928,000
- Issue date Jan 6, 2015
- Kabushiki Kaisha Toshiba
- Hung Hung
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor wafer including different lattice constants
- Patent number 8,884,307
- Issue date Nov 11, 2014
- Kabushiki Kaisha Toshiba
- Hung Hung
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor light emitting device
- Patent number 8,878,213
- Issue date Nov 4, 2014
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device
- Patent number 8,872,158
- Issue date Oct 28, 2014
- Kabushiki Kaisha Toshiba
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device including a doped nitride semiconducto...
- Patent number 8,835,983
- Issue date Sep 16, 2014
- Kabushiki Kaisha Toshiba
- Hung Hung
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing nitride semiconductor device
- Patent number 8,809,085
- Issue date Aug 19, 2014
- Kabushiki Kaisha Toshiba
- Taisuke Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device, nitride semiconductor wafer, a...
- Patent number 8,809,101
- Issue date Aug 19, 2014
- Kabushiki Kaisha Toshiba
- Jongil Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride semiconductor crystal layer
- Patent number 8,790,999
- Issue date Jul 29, 2014
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device, nitride semiconductor wafer, and meth...
- Patent number 8,785,943
- Issue date Jul 22, 2014
- Kabushiki Kaisha Toshiba
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer, crystal growth method, and semiconductor device
- Patent number 8,779,437
- Issue date Jul 15, 2014
- Kabushiki Kaisha Toshiba
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device, nitride semiconductor wafer and metho...
- Patent number 8,759,851
- Issue date Jun 24, 2014
- Kabushiki Kaisha Toshiba
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal growth method for nitride semiconductor having a multiquant...
- Patent number 8,728,237
- Issue date May 20, 2014
- Kabushiki Kaisha Toshiba
- Tomonari Shioda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor light emitting device
- Patent number 8,698,123
- Issue date Apr 15, 2014
- Kabushiki Kaisha Toshiba
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device, nitride semiconductor wafer, and meth...
- Patent number 8,692,287
- Issue date Apr 8, 2014
- Kabushiki Kaisha Toshiba
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device and method for manufacturing same
- Patent number 8,647,905
- Issue date Feb 11, 2014
- Kabushiki Kaisha Toshiba
- Yoshiyuki Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device
- Patent number 8,610,106
- Issue date Dec 17, 2013
- Kabushiki Kaisha Toshiba
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical semiconductor device
- Patent number 8,604,496
- Issue date Dec 10, 2013
- Kabushiki Kaisha Toshiba
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device, nitride semiconductor wafer and metho...
- Patent number 8,525,194
- Issue date Sep 3, 2013
- Kabushiki Kaisha Toshiba
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device and method for manufacturing same
- Patent number 8,525,197
- Issue date Sep 3, 2013
- Kabushiki Kaisha Toshiba
- Yoshiyuki Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride semiconductor crystal layer
- Patent number 8,476,151
- Issue date Jul 2, 2013
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device and method of manufacturing the...
- Patent number 8,399,896
- Issue date Mar 19, 2013
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor light emitting device
- Patent number 8,093,083
- Issue date Jan 10, 2012
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACT...
- Publication number 20150102381
- Publication date Apr 16, 2015
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE
- Publication number 20150050763
- Publication date Feb 19, 2015
- KABUSHIKI KAISHA TOSHIBA
- Naoharu SUGIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR WAFER, A...
- Publication number 20140319457
- Publication date Oct 30, 2014
- Kabushiki Kaisha Toshiba
- Jongil HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER AND METHO...
- Publication number 20140231824
- Publication date Aug 21, 2014
- KABUSHIKI KAISHA TOSHIBA
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL GROWTH METHOD FOR NITRIDE SEMICONDUCTOR HAVING A MULTIQUANT...
- Publication number 20140209013
- Publication date Jul 31, 2014
- KABUSHIKI KAISHA TOSHIBA
- Tomonari SHIODA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE
- Publication number 20140166978
- Publication date Jun 19, 2014
- KABUSHIKI KAISHA TOSHIBA
- Tomonari SHIODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, AND METH...
- Publication number 20140048770
- Publication date Feb 20, 2014
- KABUSHIKI KAISHA TOSHIBA
- Hung HUNG
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER AND METHO...
- Publication number 20130306981
- Publication date Nov 21, 2013
- KABUSHIKI KAISHA TOSHIBA
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20130309796
- Publication date Nov 21, 2013
- KABUSHIKI KAISHA TOSHIBA
- Yoshiyuki HARADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METH...
- Publication number 20130228745
- Publication date Sep 5, 2013
- Kabushiki Kaisha Toshiba
- Hiroshi Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL LAYER
- Publication number 20130196487
- Publication date Aug 1, 2013
- KABUSHIKI KAISHA TOSHIBA
- Naoharu SUGIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, AND METH...
- Publication number 20130087762
- Publication date Apr 11, 2013
- Kabushiki Kaisha Toshiba
- Hung HUNG
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR WAFER
- Publication number 20130087760
- Publication date Apr 11, 2013
- Kabushiki Kaisha Toshiba
- Hisashi Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METH...
- Publication number 20130062612
- Publication date Mar 14, 2013
- Kabushiki Kaisha Toshiba
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER AND METHO...
- Publication number 20120292632
- Publication date Nov 22, 2012
- Kabushiki Kaisha Toshiba
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METH...
- Publication number 20120292648
- Publication date Nov 22, 2012
- Kabushiki Kaisha Toshiba
- Hiroshi Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE
- Publication number 20120292650
- Publication date Nov 22, 2012
- Kabushiki Kaisha Toshiba
- Naoharu SUGIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR WAFER, A...
- Publication number 20120292592
- Publication date Nov 22, 2012
- Kabushiki Kaisha Toshiba
- Jongil HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METH...
- Publication number 20120292593
- Publication date Nov 22, 2012
- Kabushiki Kaisha Toshiba
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20120295377
- Publication date Nov 22, 2012
- Kabushiki Kaisha Toshiba
- Taisuke SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACT...
- Publication number 20120292649
- Publication date Nov 22, 2012
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER, CRYSTAL GROWTH METHOD, AND SEMICONDUCTOR DEVICE
- Publication number 20120223323
- Publication date Sep 6, 2012
- Kabushiki Kaisha Toshiba
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE
- Publication number 20120217471
- Publication date Aug 30, 2012
- Kabushiki Kaisha Toshiba
- Tomonari SHIODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE
- Publication number 20120146045
- Publication date Jun 14, 2012
- Kabushiki Kaisha Toshiba
- Naoharu SUGIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE
- Publication number 20120138890
- Publication date Jun 7, 2012
- Kabushiki Kaisha Toshiba
- Tomonari SHIODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTICAL SEMICONDUCTOR DEVICE
- Publication number 20120132940
- Publication date May 31, 2012
- Kabushiki Kaisha Toshiba
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL LAYER
- Publication number 20120058626
- Publication date Mar 8, 2012
- Kabushiki Kaisha Toshiba
- Naoharu SUGIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE
- Publication number 20120032209
- Publication date Feb 9, 2012
- Kabushiki Kaisha Toshiba
- Tomonari SHIODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20120012814
- Publication date Jan 19, 2012
- Kabushiki Kaisha Toshiba
- Yoshiyuki HARADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE...
- Publication number 20110204394
- Publication date Aug 25, 2011
- Kabushiki Kaisha Toshiba
- Toshiki HIKOSAKA
- H01 - BASIC ELECTRIC ELEMENTS

Tomonari Shioda

Person

Patents Grantslast 30 patents

Semiconductor light emitting device, nitride semiconductor wafer, a...

Nitride semiconductor device, nitride semiconductor wafer, and meth...

Semiconductor light emitting device

Semiconductor light emitting device and semiconductor wafer

Semiconductor light emitting device

Nitride semiconductor device, nitride semiconductor wafer and metho...

Semiconductor light emitting device, wafer, and method for manufact...

Nitride semiconductor wafer including different lattice constants

Nitride semiconductor wafer including different lattice constants

Semiconductor light emitting device

Semiconductor light emitting device

Nitride semiconductor device including a doped nitride semiconducto...

Method for manufacturing nitride semiconductor device

Semiconductor light emitting device, nitride semiconductor wafer, a...

Method for manufacturing nitride semiconductor crystal layer

Nitride semiconductor device, nitride semiconductor wafer, and meth...

Wafer, crystal growth method, and semiconductor device

Nitride semiconductor device, nitride semiconductor wafer and metho...

Crystal growth method for nitride semiconductor having a multiquant...

Semiconductor light emitting device

Nitride semiconductor device, nitride semiconductor wafer, and meth...

Semiconductor light emitting device and method for manufacturing same

Semiconductor light emitting device

Optical semiconductor device

Nitride semiconductor device, nitride semiconductor wafer and metho...

Semiconductor light emitting device and method for manufacturing same

Method for manufacturing nitride semiconductor crystal layer

Semiconductor light emitting device and method of manufacturing the...

Method for manufacturing a semiconductor light emitting device

Patents Applicationslast 30 patents

SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACT...

SEMICONDUCTOR LIGHT EMITTING DEVICE

SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR WAFER, A...

NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER AND METHO...

CRYSTAL GROWTH METHOD FOR NITRIDE SEMICONDUCTOR HAVING A MULTIQUANT...

SEMICONDUCTOR LIGHT EMITTING DEVICE

NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, AND METH...

NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER AND METHO...

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METH...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL LAYER

NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, AND METH...

SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR WAFER

NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METH...

NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER AND METHO...

NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METH...

SEMICONDUCTOR LIGHT EMITTING DEVICE

SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR WAFER, A...

NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METH...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACT...

WAFER, CRYSTAL GROWTH METHOD, AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR LIGHT EMITTING DEVICE

SEMICONDUCTOR LIGHT EMITTING DEVICE

SEMICONDUCTOR LIGHT EMITTING DEVICE

OPTICAL SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL LAYER

SEMICONDUCTOR LIGHT EMITTING DEVICE

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE...