Tomonari YAMAMOTO

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Jhubei City, TW

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with strained layer
- Patent number 9,831,321
- Issue date Nov 28, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lun-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with strained layer
- Patent number 9,368,626
- Issue date Jun 14, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lun-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for MOSFETS with high-K and metal gate structure
- Patent number 8,912,610
- Issue date Dec 16, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jr Jung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 7,883,960
- Issue date Feb 8, 2011
- Fujitsu Semiconductor Limited
- Masatoshi Fukuda
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device with Strained Layer
- Publication number 20160293735
- Publication date Oct 6, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lun-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Strained Layer
- Publication number 20150155383
- Publication date Jun 4, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lun-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for MOSFETS with High-K and Metal Gate Structure
- Publication number 20130119487
- Publication date May 16, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jr Jung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20090311838
- Publication date Dec 17, 2009
- Fujitsu Microelectronics Limited
- Masatoshi FUKUDA
- H01 - BASIC ELECTRIC ELEMENTS