Tomosuke Yoshida

Person

Annaka-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing a bonded SOI wafer
- Patent number 10,460,983
- Issue date Oct 29, 2019
- SHIN-ETSU HANDOTAI CO.,LTD.
- Taishi Wakabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon epitaxial wafer
- Patent number 8,697,547
- Issue date Apr 15, 2014
- Shin-Etsu Handotai Co., Ltd.
- Tomosuke Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon epitaxial wafer
- Patent number 7,713,851
- Issue date May 11, 2010
- Shin-Etsu Handotai Co., Ltd.
- Fumitaka Kume
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Susceptor, vapor phase growth apparatus, epitaxial wafer manufactur...
- Patent number 7,270,708
- Issue date Sep 18, 2007
- Shin-Etsu Handotai Co., Ltd.
- Tomosuke Yoshida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon wafer
- Patent number 6,599,603
- Issue date Jul 29, 2003
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing an epitaxial silicon single crystal wafer and...
- Patent number 6,162,708
- Issue date Dec 19, 2000
- Shin-Etsu Handotai Co., Ltd.
- Masaro Tamatsuka
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING A BONDED SOI WAFER
- Publication number 20170040210
- Publication date Feb 9, 2017
- Shin-Etsu Handotai Co., Ltd.
- Taishi WAKABAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON EPITAXIAL WAFER
- Publication number 20150011079
- Publication date Jan 8, 2015
- Shin-Etsu Handotai Co., Ltd.
- Tomosuke Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON EPITAXIAL WAFER
- Publication number 20120231612
- Publication date Sep 13, 2012
- Shin-Etsu Handotai Co., Ltd.
- Tomosuke Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Manufacturing Epitaxial Wafer and Epitaxial Wafer Manufa...
- Publication number 20090038540
- Publication date Feb 12, 2009
- Shin-Etsu Handotai Co., Ltd.
- Tomosuke Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Epitaxial Wafer and Manufacturing Method Thereof
- Publication number 20070269338
- Publication date Nov 22, 2007
- Shin-Etsu Handotai Co., Ltd.
- Fumitaka Kume
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing silicon epitaxial wafer
- Publication number 20070243699
- Publication date Oct 18, 2007
- Shin-Etsu Handotai Co., Ltd.
- Fumitaka Kume
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon epitaxial wafer, and silicon epitaxial wafer manufacturing...
- Publication number 20060281283
- Publication date Dec 14, 2006
- Shin-Etsu Handotai Co., Ltd.
- Tomosuke Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Application
Susceptor gaseous phase growing device, device and method for manuf...
- Publication number 20040255843
- Publication date Dec 23, 2004
- Tomosuke Yoshida
- C30 - CRYSTAL GROWTH

Tomosuke Yoshida

Person

Patents Grantslast 30 patents

Method for manufacturing a bonded SOI wafer

Method for manufacturing silicon epitaxial wafer

Method of manufacturing silicon epitaxial wafer

Susceptor, vapor phase growth apparatus, epitaxial wafer manufactur...

Silicon wafer

Method for producing an epitaxial silicon single crystal wafer and...

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING A BONDED SOI WAFER

METHOD FOR MANUFACTURING SILICON EPITAXIAL WAFER

METHOD FOR MANUFACTURING SILICON EPITAXIAL WAFER

Method for Manufacturing Epitaxial Wafer and Epitaxial Wafer Manufa...

Silicon Epitaxial Wafer and Manufacturing Method Thereof

Method of manufacturing silicon epitaxial wafer

Silicon epitaxial wafer, and silicon epitaxial wafer manufacturing...

Susceptor gaseous phase growing device, device and method for manuf...