Tomoyasu Inoue

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming a single crystal semiconductor layer from a non-s...
- Patent number 4,746,803
- Issue date May 24, 1988
- Agency of Industrial Science and Technology
- Tomoyasu Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a single crystal semiconductor layer from a non-s...
- Patent number 4,662,949
- Issue date May 5, 1987
- Director General of Agency of Industrial Science and Technology
- Tomoyasu Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device involving a capacitor
- Patent number 4,656,054
- Issue date Apr 7, 1987
- Kabushiki Kaisha Toshiba
- Tomoyasu Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing three-dimensional semiconductor device by...
- Patent number 4,498,226
- Issue date Feb 12, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Tomoyasu Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recrystallized three dimensional integrated circuit
- Patent number 4,472,729
- Issue date Sep 18, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Kenji Shibata
- H01 - BASIC ELECTRIC ELEMENTS