Tomoyoshi MISHIMA

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Crystal laminate, semiconductor device and method for manufacturing...
- Patent number 11,640,906
- Issue date May 2, 2023
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride laminated substrate and semiconductor device
- Patent number 10,998,188
- Issue date May 4, 2021
- HOSEI UNIVERSITY
- Tomoyoshi Mishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 10,797,181
- Issue date Oct 6, 2020
- HOSEI UNIVERSITY
- Tomoyoshi Mishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,685,841
- Issue date Jun 16, 2020
- HOSEI UNIVERSITY
- Tohru Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,483,350
- Issue date Nov 19, 2019
- HOSEI UNIVERSITY
- Tohru Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor multilayer structure and method of manufacturing the...
- Patent number 9,899,570
- Issue date Feb 20, 2018
- Sumitomo Chemical Company, Limited
- Naoki Kaneda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method of manufacturing the same
- Patent number 9,530,858
- Issue date Dec 27, 2016
- Sumitomo Chemical Company, Limited
- Akihisa Terano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor element and method of manufacturing the same
- Patent number 9,059,328
- Issue date Jun 16, 2015
- Hitachi Metals, Ltd.
- Akihisa Terano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride rectifying device
- Patent number 8,835,930
- Issue date Sep 16, 2014
- Hitachi Metals, Ltd.
- Tadayoshi Tsuchiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method of making same
- Patent number 7,786,509
- Issue date Aug 31, 2010
- Hitachi Cable, Ltd.
- Tomoyoshi Mishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Module for optical transmitter
- Patent number 6,735,353
- Issue date May 11, 2004
- Hitachi, Ltd.
- Koji Hirata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser and photo module using the same
- Patent number 6,728,283
- Issue date Apr 27, 2004
- Hitachi, Ltd.
- Makoto Kudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lattice-mismatched crystal structures and semiconductor device usin...
- Patent number 5,633,516
- Issue date May 27, 1997
- Hitachi, Ltd.
- Tomoyoshi Mishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced tunnel resistance and circuitry u...
- Patent number 5,548,138
- Issue date Aug 20, 1996
- Hitachi, Ltd.
- Takuma Tanimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor crystalline laminate structure, forming method of the...
- Patent number 5,495,115
- Issue date Feb 27, 1996
- Hitachi, Ltd.
- Makoto Kudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and its fabrication method
- Patent number 5,481,120
- Issue date Jan 2, 1996
- Hitachi, Ltd.
- Kazuhiro Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-junction bipolar transistor
- Patent number 5,003,366
- Issue date Mar 26, 1991
- Hitachi, Ltd.
- Tomoyoshi Mishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor structure and process for making same
- Patent number 4,914,488
- Issue date Apr 3, 1990
- Hitachi, Ltd.
- Masao Yamane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having strained superlattice buffer layers wit...
- Patent number 4,835,583
- Issue date May 30, 1989
- Hitachi, Ltd.
- Makoto Morioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction FET with doubly-doped channel
- Patent number 4,673,959
- Issue date Jun 16, 1987
- Hitachi, Ltd.
- Yasuhiro Shiraki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor member and semiconductor device employing the same
- Patent number 4,672,406
- Issue date Jun 9, 1987
- Hitachi, Ltd.
- Yasushi Sawada
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CRYSTAL LAMINATE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING...
- Publication number 20200227262
- Publication date Jul 16, 2020
- Sumitomo Chemical Company, Limited
- Fumimasa HORIKIRI
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD AND INSPECTION METHOD OF GROUP-III NITRIDE LAM...
- Publication number 20200091016
- Publication date Mar 19, 2020
- Sumitomo Chemical Company, Limited
- Fumimasa HORIKIRI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GALLIUM NITRIDE LAMINATED SUBSTRATE AND SEMICONDUCTOR DEVICE
- Publication number 20190348276
- Publication date Nov 14, 2019
- Hosei University
- Tomoyoshi MISHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190189808
- Publication date Jun 20, 2019
- Hosei University
- Tomoyoshi MISHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20190181010
- Publication date Jun 13, 2019
- Hosei University
- Tohru NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20180261667
- Publication date Sep 13, 2018
- Hosei University
- Tohru NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MULTILAYER STRUCTURE AND METHOD OF MANUFACTURING THE...
- Publication number 20170141270
- Publication date May 18, 2017
- Sumitomo Chemical Company, Limited
- Naoki KANEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Semiconductor Device and Method of Manufacturing the Same
- Publication number 20150179780
- Publication date Jun 25, 2015
- Hitachi Metals, Ltd.
- Akihisa TERANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUTOR DEVICE
- Publication number 20140191369
- Publication date Jul 10, 2014
- Hitachi Metals, Ltd.
- Tadayoshi TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Semiconductor Element and Method of Manufacturing the Same
- Publication number 20140117376
- Publication date May 1, 2014
- Hitachi Metals, Ltd.
- Akihisa TERANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE RECTIFYING DEVICE
- Publication number 20130001585
- Publication date Jan 3, 2013
- Hitachi Cable, Ltd.
- Tadayoshi TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIODE
- Publication number 20120313108
- Publication date Dec 13, 2012
- Hitachi Cable, Ltd.
- Tadayoshi TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR SWITCHING...
- Publication number 20090026499
- Publication date Jan 29, 2009
- Takeshi Kikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-effect transistor and method of making same
- Publication number 20090001423
- Publication date Jan 1, 2009
- HITACHI CABLE, LTD.
- Tomoyoshi Mishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Module for optical transmitter
- Publication number 20030142928
- Publication date Jul 31, 2003
- Hitachi, Ltd. and Hitachi ULSI Systems Co., Ltd.
- Koji Hirata
- G02 - OPTICS
Information Patent Application
Compound semiconductor device, method for producing thereof and hig...
- Publication number 20030132496
- Publication date Jul 17, 2003
- Hitachi, Ltd.
- Akihisa Terano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor laser and photo module using the same
- Publication number 20030086461
- Publication date May 8, 2003
- Hitachi, Ltd.
- Makoto Kudo
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor device and electronic device using the same
- Publication number 20030062538
- Publication date Apr 3, 2003
- Makoto Kudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fet (field effect transistor) and high frequency module
- Publication number 20020149032
- Publication date Oct 17, 2002
- Kiyoshi Ouchi
- H01 - BASIC ELECTRIC ELEMENTS

Tomoyoshi MISHIMA

Person

Patents Grantslast 30 patents

Crystal laminate, semiconductor device and method for manufacturing...

Gallium nitride laminated substrate and semiconductor device

Semiconductor device and method for manufacturing the same

Semiconductor device

Semiconductor device

Semiconductor multilayer structure and method of manufacturing the...

Nitride semiconductor device and method of manufacturing the same

Nitride semiconductor element and method of manufacturing the same

Gallium nitride rectifying device

Field-effect transistor and method of making same

Module for optical transmitter

Semiconductor laser and photo module using the same

Lattice-mismatched crystal structures and semiconductor device usin...

Semiconductor device with reduced tunnel resistance and circuitry u...

Semiconductor crystalline laminate structure, forming method of the...

Semiconductor device and its fabrication method

Hetero-junction bipolar transistor

Compound semiconductor structure and process for making same

Semiconductor device having strained superlattice buffer layers wit...

Heterojunction FET with doubly-doped channel

Semiconductor member and semiconductor device employing the same

Patents Applicationslast 30 patents

CRYSTAL LAMINATE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING...

MANUFACTURING METHOD AND INSPECTION METHOD OF GROUP-III NITRIDE LAM...

GALLIUM NITRIDE LAMINATED SUBSTRATE AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR MULTILAYER STRUCTURE AND METHOD OF MANUFACTURING THE...

Nitride Semiconductor Device and Method of Manufacturing the Same

NITRIDE SEMICONDUTOR DEVICE

Nitride Semiconductor Element and Method of Manufacturing the Same

GALLIUM NITRIDE RECTIFYING DEVICE

SEMICONDUCTOR DIODE

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR SWITCHING...

Field-effect transistor and method of making same

Module for optical transmitter

Compound semiconductor device, method for producing thereof and hig...

Semiconductor laser and photo module using the same

Semiconductor device and electronic device using the same

Fet (field effect transistor) and high frequency module