Tomoyuki Tanaka

Person

Suita-Shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method of monocrystalline gallium nitride localized s...
- Patent number 7,393,763
- Issue date Jul 1, 2008
- Osaka Prefecture
- Katsutoshi Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing apparatus for buried insulating layer-type semiconduc...
- Patent number 7,128,788
- Issue date Oct 31, 2006
- Osaka Prefecture
- Katsutoshi Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for buried insulating layer-type semiconductor...
- Patent number 7,084,049
- Issue date Aug 1, 2006
- Osaka Prefecture
- Katsutoshi Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing device for buried insulating layer type single crysta...
- Patent number 7,077,875
- Issue date Jul 18, 2006
- Osaka Prefecture
- Katsutoshi Izumi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing buried insulating layer type single crysta...
- Patent number 6,927,144
- Issue date Aug 9, 2005
- Osaka Prefecture
- Katsutoshi Izumi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
BIPHENYLACETAMIDE DERIVATIVE
- Publication number 20120142771
- Publication date Jun 7, 2012
- Dainippon Sumitomo Pharma Co., Ltd.
- Seiji IWAMA
- C07 - ORGANIC CHEMISTRY
Information Patent Application
BIPHENYLACETAMIDE DERIVATIVE
- Publication number 20110224304
- Publication date Sep 15, 2011
- DAINIPPON SUMITOMO PHARMA CO., LTD
- Seiji Iwama
- C07 - ORGANIC CHEMISTRY
Information Patent Application
Manufacturing method of monocrystalline gallium nitride localized s...
- Publication number 20050148108
- Publication date Jul 7, 2005
- OSAKA PREFECTURE
- Katsutoshi Izumi
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing device for buried insulating layer type single crysta...
- Publication number 20050136611
- Publication date Jun 23, 2005
- Osaka Prefecture
- Katsutoshi Izumi
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Manufacturing Buried Insulating Layer Type Single Crysta...
- Publication number 20040191966
- Publication date Sep 30, 2004
- OSAKA PREFECTURE,
- Katsutoshi IZUMI
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing apparatus for buried insulating layer-type semiconduc...
- Publication number 20040173154
- Publication date Sep 9, 2004
- OSAKA PREFECTURE
- Katsutoshi Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monocrystalline gallium nitride localized substrate and manufacturi...
- Publication number 20040099871
- Publication date May 27, 2004
- OSAKA PREFECTURE
- Katsutoshi Izumi
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing method for buried insulating layer-type semiconductor...
- Publication number 20030148586
- Publication date Aug 7, 2003
- OSAKA PREFECTURE
- Katsutoshi Izumi
- H01 - BASIC ELECTRIC ELEMENTS

Tomoyuki Tanaka

Person

Patents Grantslast 30 patents

Manufacturing method of monocrystalline gallium nitride localized s...

Manufacturing apparatus for buried insulating layer-type semiconduc...

Manufacturing method for buried insulating layer-type semiconductor...

Manufacturing device for buried insulating layer type single crysta...

Method for manufacturing buried insulating layer type single crysta...

Patents Applicationslast 30 patents

BIPHENYLACETAMIDE DERIVATIVE

BIPHENYLACETAMIDE DERIVATIVE

Manufacturing method of monocrystalline gallium nitride localized s...

Manufacturing device for buried insulating layer type single crysta...

Method for Manufacturing Buried Insulating Layer Type Single Crysta...

Manufacturing apparatus for buried insulating layer-type semiconduc...

Monocrystalline gallium nitride localized substrate and manufacturi...

Manufacturing method for buried insulating layer-type semiconductor...