Tong-Hsin Lee

Person

Taipei Hsien, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a MOS transistor with improved threshold voltage...
- Patent number 6,664,172
- Issue date Dec 16, 2003
- United Microelectronics Corp.
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating gate oxide
- Patent number 6,635,537
- Issue date Oct 21, 2003
- United Microelectronics Corp.
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing MOS transistor with fluoride implantation o...
- Patent number 6,569,726
- Issue date May 27, 2003
- United Microelectronics Corp.
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing MOS transistor with fluorine implantation a...
- Patent number 6,534,354
- Issue date Mar 18, 2003
- United Microelectronics Corp.
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating node contact opening
- Patent number 6,300,238
- Issue date Oct 9, 2001
- United Microelectronics Corp.
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of increasing gate surface area for depositing silicide mate...
- Patent number 6,251,737
- Issue date Jun 26, 2001
- United Microelectronics Corp.
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing inter-metal dielectric layer
- Patent number 6,228,756
- Issue date May 8, 2001
- United Microelectronics Corp.
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a bit line of flash memory
- Patent number 6,214,741
- Issue date Apr 10, 2001
- United Silicon Incorporated
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating lower electrode of capacitor
- Patent number 6,174,782
- Issue date Jan 16, 2001
- United Microelectronics Corp.
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to increase contact area
- Patent number 6,169,017
- Issue date Jan 2, 2001
- United Silicon Incorporated
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating STI
- Patent number 6,150,237
- Issue date Nov 21, 2000
- United Silicon Inc.
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a lower electrode of capacitor
- Patent number 6,133,091
- Issue date Oct 17, 2000
- United Silicon Inc.
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming buried bit line
- Patent number 6,127,228
- Issue date Oct 3, 2000
- United Silicon Incorporated
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a dynamic random-access memory device
- Patent number 6,093,600
- Issue date Jul 25, 2000
- United Silicon, Inc.
- Terry Chung-Yi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method for an insulation structure having a low dielect...
- Patent number 6,090,698
- Issue date Jul 18, 2000
- United Microelectronics Corp.
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Salicide process
- Patent number 6,069,032
- Issue date May 30, 2000
- United Silicon Incorporated
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preventing dopant diffusion in dual gate device
- Patent number 6,060,361
- Issue date May 9, 2000
- United Silicon Incorporated
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing charge storage electrode
- Patent number 6,043,154
- Issue date Mar 28, 2000
- United Silicon Incorporated
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing charge storage electrode
- Patent number 5,932,333
- Issue date Aug 3, 1999
- United Silicon Incorporated
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for increasing the Beta of PNP BJT device in CMOS process
- Publication number 20040166625
- Publication date Aug 26, 2004
- United Microelectronics Corp.
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a MOS transistor with improved threshold voltage...
- Publication number 20030139025
- Publication date Jul 24, 2003
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING MOS TRANSISTOR WITH FLUORIDE IMPLANTATION O...
- Publication number 20030096483
- Publication date May 22, 2003
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating gate oxide
- Publication number 20020146890
- Publication date Oct 10, 2002
- United Microelectronics Corp.
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS

Tong-Hsin Lee

Person

Patents Grantslast 30 patents

Method of forming a MOS transistor with improved threshold voltage...

Method of fabricating gate oxide

Method of manufacturing MOS transistor with fluoride implantation o...

Method of manufacturing MOS transistor with fluorine implantation a...

Method of fabricating node contact opening

Method of increasing gate surface area for depositing silicide mate...

Method of manufacturing inter-metal dielectric layer

Method of fabricating a bit line of flash memory

Method of fabricating lower electrode of capacitor

Method to increase contact area

Method of fabricating STI

Method of fabricating a lower electrode of capacitor

Method of forming buried bit line

Method of fabricating a dynamic random-access memory device

Fabrication method for an insulation structure having a low dielect...

Salicide process

Method for preventing dopant diffusion in dual gate device

Method for manufacturing charge storage electrode

Method for manufacturing charge storage electrode

Patents Applicationslast 30 patents

Method for increasing the Beta of PNP BJT device in CMOS process

Method of forming a MOS transistor with improved threshold voltage...

METHOD OF MANUFACTURING MOS TRANSISTOR WITH FLUORIDE IMPLANTATION O...

Method of fabricating gate oxide