Tonghua Peng

Person

Beijing, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Semi-insulating silicon carbide monocrystal and method of growing t...
- Patent number 9,893,152
- Issue date Feb 13, 2018
- Institute of Physics, Chinese Academy of Sciences
- Xiaolong Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nonlinear optical device manufactured with 4H silicon carbide crystal
- Patent number 9,500,931
- Issue date Nov 22, 2016
- Institute of Physics, Chinese Academy of Sciences
- Xiaolong Chen
- G02 - OPTICS
Information Patent Grant
Process for growing silicon carbide single crystal by physical vapo...
- Patent number 9,340,898
- Issue date May 17, 2016
- Tankeblue Semiconductor Co. Ltd.
- Xiaolong Chen
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING...
- Publication number 20240105782
- Publication date Mar 28, 2024
- TANKEBLUE SEMICONDUCTOR CO., LTD.
- Yanfang LOU
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
HIGH QUALITY SILICON CARBIDE SEED CRYSTAL, SILICON CARBIDE CRYSTAL,...
- Publication number 20230295838
- Publication date Sep 21, 2023
- TANKEBLUE SEMICONDUCTOR CO., LTD.
- Tonghua PENG
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL WAFER, CRYSTAL, PREPARATION METHODS...
- Publication number 20230053509
- Publication date Feb 23, 2023
- TANKEBLUE SEMICONDUCTOR CO., LTD.
- Chunjun LIU
- C01 - INORGANIC CHEMISTRY
Information Patent Application
NONLINEAR OPTICAL DEVICE MANUFACTURED WITH 4H SILICON CARBIDE CRYSTAL
- Publication number 20150085349
- Publication date Mar 26, 2015
- INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
- Xiaolong Chen
- G02 - OPTICS
Information Patent Application
SEMI-INSULATING SILICON CARBIDE MONOCRYSTAL AND METHOD OF GROWING T...
- Publication number 20130313575
- Publication date Nov 28, 2013
- INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
- Xiaolong Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR GROWING SILICON CARBIDE SINGLE CRYSTAL BY PHYSICAL VAPO...
- Publication number 20130269598
- Publication date Oct 17, 2013
- Institute of Physics Chinese Academy of Sciences
- Xiaolong Chen
- C30 - CRYSTAL GROWTH

Tonghua Peng

Person

Patents Grantslast 30 patents

Semi-insulating silicon carbide monocrystal and method of growing t...

Nonlinear optical device manufactured with 4H silicon carbide crystal

Process for growing silicon carbide single crystal by physical vapo...

Patents Applicationslast 30 patents

MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING...

HIGH QUALITY SILICON CARBIDE SEED CRYSTAL, SILICON CARBIDE CRYSTAL,...

SILICON CARBIDE SINGLE CRYSTAL WAFER, CRYSTAL, PREPARATION METHODS...

NONLINEAR OPTICAL DEVICE MANUFACTURED WITH 4H SILICON CARBIDE CRYSTAL

SEMI-INSULATING SILICON CARBIDE MONOCRYSTAL AND METHOD OF GROWING T...

PROCESS FOR GROWING SILICON CARBIDE SINGLE CRYSTAL BY PHYSICAL VAPO...