Toru Matsunami

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Kyoto, JP

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Patents Grantslast 30 patents

Information Patent Grant
SiC epitaxial substrate and method for producing the same
- Patent number 8,585,821
- Issue date Nov 19, 2013
- Ecotron Co., Ltd.
- Nobuhiko Nakamura
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FABRICATING SiC SUBSTRATE
- Publication number 20120042822
- Publication date Feb 23, 2012
- ECOTRON CO., LTD.
- Shinkichi Hamada
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING THE SAME
- Publication number 20100119849
- Publication date May 13, 2010
- Nobuhiko Nakamura
- C30 - CRYSTAL GROWTH