Toru Nagashima

Person

Yamaguchi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Group III nitride single crystal substrate and method for productio...
- Patent number 12,116,697
- Issue date Oct 15, 2024
- Tokuyama Corporation
- Toru Nagashima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride single crystal substrate
- Patent number 11,767,612
- Issue date Sep 26, 2023
- Tokuyama Corporation
- Masayuki Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for manufacturing group III nitride single crystal, metho...
- Patent number 11,348,785
- Issue date May 31, 2022
- Tokuyama Corporation
- Toru Nagashima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing aluminum nitride single crystal substrate
- Patent number 10,822,718
- Issue date Nov 3, 2020
- Tokuyama Corporation
- Toru Nagashima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus for manufacturing group III nitride single crystal, metho...
- Patent number 10,354,862
- Issue date Jul 16, 2019
- Tokuyama Corporation
- Toru Nagashima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Highly transparent aluminum nitride single crystalline layers and d...
- Patent number 9,840,790
- Issue date Dec 12, 2017
- Hexatech, Inc.
- Akinori Koukitu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
N-type aluminum nitride monocrystalline substrate
- Patent number 9,806,205
- Issue date Oct 31, 2017
- Tokuyama Corporation
- Toru Kinoshita
- C30 - CRYSTAL GROWTH
Information Patent Grant
N-type aluminum nitride single-crystal substrate and vertical nitri...
- Patent number 9,748,410
- Issue date Aug 29, 2017
- Tokuyama Corporation
- Toru Kinoshita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing aluminum-based group III nitride single cr...
- Patent number 9,708,733
- Issue date Jul 18, 2017
- Tokuyama Corporation
- Akinori Koukitsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-cystalline aluminum nitride substrate and a manufacturing me...
- Patent number 9,691,942
- Issue date Jun 27, 2017
- National University Corporation Tokyo University of Agriculture and Technology
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method of an aluminum based group III nitride single cry...
- Patent number 9,145,621
- Issue date Sep 29, 2015
- Tokuyama Corporation
- Toru Nagashima
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of producing a group III nitride crystal
- Patent number 8,926,752
- Issue date Jan 6, 2015
- Tokuyama Corporation
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Grant
n-Type conductive aluminum nitride semiconductor crystal and manufa...
- Patent number 8,129,208
- Issue date Mar 6, 2012
- Tokuyama Corporation
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for producing group III nitride
- Patent number 7,947,577
- Issue date May 24, 2011
- Tokuyama Corporation
- Toru Nagashima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20230407521
- Publication date Dec 21, 2023
- Tokuyama Corporation
- Masayuki FUKUDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCTIO...
- Publication number 20220364267
- Publication date Nov 17, 2022
- Tokuyama Corporation
- Toru NAGASHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20200299862
- Publication date Sep 24, 2020
- Tokuyama Corporation
- Masayuki FUKUDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
APPARATUS FOR MANUFACTURING GROUP III NITRIDE SINGLE CRYSTAL, METHO...
- Publication number 20190287799
- Publication date Sep 19, 2019
- Tokuyama Corporation
- Toru NAGASHIMA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20190093255
- Publication date Mar 28, 2019
- Tokuyama Corporation
- Toru NAGASHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR MANUFACTURING GROUP III NITRIDE SINGLE CRYSTAL, METHO...
- Publication number 20170330745
- Publication date Nov 16, 2017
- Tokuyama Corporation
- Toru NAGASHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
N-Type Aluminum Nitride Monocrystalline Substrate
- Publication number 20170222064
- Publication date Aug 3, 2017
- Tokuyama Corporation
- Toru Kinoshita
- C30 - CRYSTAL GROWTH
Information Patent Application
N-TYPE ALUMINUM NITRIDE SINGLE-CRYSTAL SUBSTRATE AND VERTICAL NITRI...
- Publication number 20160254391
- Publication date Sep 1, 2016
- Tokuyama Corporation
- Toru Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING ALUMINUM-BASED GROUP III NITRIDE SINGLE CR...
- Publication number 20160108554
- Publication date Apr 21, 2016
- Tokuyama Corporation
- Akinori KOUKITSU
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGHLY TRANSPARENT ALUMINUM NITRIDE SINGLE CRYSTALLINE LAYERS AND D...
- Publication number 20150247260
- Publication date Sep 3, 2015
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
Single-Crystalline Aluminum Nitride Substrate and a Manufacturing M...
- Publication number 20140346638
- Publication date Nov 27, 2014
- Tokuyama Corporation
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
Production Method of an Aluminum Based Group III Nitride Single Cry...
- Publication number 20130319320
- Publication date Dec 5, 2013
- Tokuyama Corporation
- Toru Nagashima
- C30 - CRYSTAL GROWTH
Information Patent Application
LAMINATED BODY AND THE METHOD FOR PRODUCTION THEREOF
- Publication number 20110094438
- Publication date Apr 28, 2011
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NIT...
- Publication number 20110018104
- Publication date Jan 27, 2011
- Toru Nagashima
- C30 - CRYSTAL GROWTH
Information Patent Application
N-TYPE CONDUCTIVE ALUMINUM NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFA...
- Publication number 20100320462
- Publication date Dec 23, 2010
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING A GROUP III NITRIDE CRYSTAL
- Publication number 20100093124
- Publication date Apr 15, 2010
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING GROUP III NITRIDE
- Publication number 20100029065
- Publication date Feb 4, 2010
- Toru Nagashima
- C30 - CRYSTAL GROWTH

Toru Nagashima

Person

Patents Grantslast 30 patents

Group III nitride single crystal substrate and method for productio...

Group III nitride single crystal substrate

Apparatus for manufacturing group III nitride single crystal, metho...

Method for producing aluminum nitride single crystal substrate

Apparatus for manufacturing group III nitride single crystal, metho...

Highly transparent aluminum nitride single crystalline layers and d...

N-type aluminum nitride monocrystalline substrate

N-type aluminum nitride single-crystal substrate and vertical nitri...

Method for manufacturing aluminum-based group III nitride single cr...

Single-cystalline aluminum nitride substrate and a manufacturing me...

Production method of an aluminum based group III nitride single cry...

Method of producing a group III nitride crystal

n-Type conductive aluminum nitride semiconductor crystal and manufa...

Method and apparatus for producing group III nitride

Patents Applicationslast 30 patents

GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE

GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCTIO...

GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE

APPARATUS FOR MANUFACTURING GROUP III NITRIDE SINGLE CRYSTAL, METHO...

METHOD FOR PRODUCING ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE

APPARATUS FOR MANUFACTURING GROUP III NITRIDE SINGLE CRYSTAL, METHO...

N-Type Aluminum Nitride Monocrystalline Substrate

N-TYPE ALUMINUM NITRIDE SINGLE-CRYSTAL SUBSTRATE AND VERTICAL NITRI...

METHOD FOR MANUFACTURING ALUMINUM-BASED GROUP III NITRIDE SINGLE CR...

HIGHLY TRANSPARENT ALUMINUM NITRIDE SINGLE CRYSTALLINE LAYERS AND D...

Single-Crystalline Aluminum Nitride Substrate and a Manufacturing M...

Production Method of an Aluminum Based Group III Nitride Single Cry...

LAMINATED BODY AND THE METHOD FOR PRODUCTION THEREOF

METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NIT...

N-TYPE CONDUCTIVE ALUMINUM NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFA...

METHOD OF PRODUCING A GROUP III NITRIDE CRYSTAL

METHOD AND APPARATUS FOR PRODUCING GROUP III NITRIDE