Toshiaki Asahi

Person

Toda, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Heat treatment method of ZnTe single crystal substrate and ZnTe sin...
- Patent number 8,476,171
- Issue date Jul 2, 2013
- Nippon Mining & Metals Co., Ltd.
- Toshiaki Asahi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of co-doping group 14 (4B) elements to produce ZnTe system c...
- Patent number 7,696,073
- Issue date Apr 13, 2010
- Nippon Mining & Metals Co., Ltd.
- Tetsuya Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing ZnTe system compound semiconductor single crys...
- Patent number 7,629,625
- Issue date Dec 8, 2009
- Nippon Mining & Metals Co., Ltd.
- Tetsuya Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing ZnTe system compound semiconductor single crys...
- Patent number 7,521,282
- Issue date Apr 21, 2009
- Nippon Mining & Metals Co., Ltd.
- Tetsuya Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing ZnTe system compound semiconductor single crys...
- Patent number 7,517,720
- Issue date Apr 14, 2009
- Nippon Mining & Metals Co., Ltd.
- Tetsuya Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing ZnTe compound semiconductor single crystal...
- Patent number 7,358,159
- Issue date Apr 15, 2008
- Nippon Mining & Metals Co., Ltd.
- Tetsuya Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production method for compound semiconductor single crystal
- Patent number 7,229,494
- Issue date Jun 12, 2007
- Nippon Mining & Metals Co., Ltd.
- Toshiaki Asahi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing compound semiconductor single crystal
- Patent number 7,175,705
- Issue date Feb 13, 2007
- Nippon Mining & Metals Co., Ltd.
- Shigeto Fujimura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing single crystal of compound semiconductor and...
- Patent number 6,989,059
- Issue date Jan 24, 2006
- Nikko Materials Co., Ltd.
- Toshiaki Asahi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing compound semiconductor single crystal
- Patent number 6,334,897
- Issue date Jan 1, 2002
- Japan Energy Corporation
- Toshiaki Asahi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of growing a bulk crystal
- Patent number 5,871,580
- Issue date Feb 16, 1999
- Japan Energy Corporation
- Toshiaki Asahi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing single crystal
- Patent number 5,603,763
- Issue date Feb 18, 1997
- Japan Energy Corporation
- Yoshiteru Taniguchi
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR SYNTHESIZING GROUP II-VI COMPOUND SEMICONDUCTOR POLYCRYS...
- Publication number 20130029278
- Publication date Jan 31, 2013
- JX NIPPON MINING & METALS CORPORATION
- Toshiaki Asahi
- C30 - CRYSTAL GROWTH
Information Patent Application
HEAT TREATMENT METHOD OF ZNTE SINGLE CRYSTAL SUBSTRATE AND ZNTE SIN...
- Publication number 20110236297
- Publication date Sep 29, 2011
- Toshiaki Asahi
- C30 - CRYSTAL GROWTH
Information Patent Application
Heat Treatment Method of ZnTe Single Crystal Substrate and ZnTe Sin...
- Publication number 20090042002
- Publication date Feb 12, 2009
- Toshiaki Asahi
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing ZnTe system compound semiconductor single crys...
- Publication number 20080090327
- Publication date Apr 17, 2008
- NIPPON MINING & NETALS CO., LTD.
- Tetsuya Yamamoto
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing ZnTe system compound semiconductor single crys...
- Publication number 20080090390
- Publication date Apr 17, 2008
- NIPPON MINING & METALS CO., LTD.
- Tetsuya Yamamoto
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing ZnTe system compound semiconductor single crys...
- Publication number 20080089831
- Publication date Apr 17, 2008
- NIPPON MINING & METALS CO., LTD.
- Tetsuya Yamamoto
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing ZnTe system compound semiconductor single crys...
- Publication number 20080090328
- Publication date Apr 17, 2008
- NIPPON MINING & METALS CO., LTD.
- Tetsuya Yamamoto
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing ZnTe system compound semiconductor single crys...
- Publication number 20080090386
- Publication date Apr 17, 2008
- NIPPON MINING & METALS CO., LTD.
- Tetsuya Yamamoto
- C30 - CRYSTAL GROWTH
Information Patent Application
Production method for compound semiconductor single crystal
- Publication number 20050118739
- Publication date Jun 2, 2005
- Nikko Materials Co., Ltd.
- Toshiaki Asahi
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing single crystal of compound semiconductor and...
- Publication number 20050000403
- Publication date Jan 6, 2005
- Toshiaki Asahi
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing znte compound semiconductor single crystal...
- Publication number 20040155255
- Publication date Aug 12, 2004
- Tetsuya Yamamoto
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing compound semiconductor single crystal
- Publication number 20010007239
- Publication date Jul 12, 2001
- Shigeto Fujimura
- C30 - CRYSTAL GROWTH

Toshiaki Asahi

Person

Patents Grantslast 30 patents

Heat treatment method of ZnTe single crystal substrate and ZnTe sin...

Method of co-doping group 14 (4B) elements to produce ZnTe system c...

Method for producing ZnTe system compound semiconductor single crys...

Method for producing ZnTe system compound semiconductor single crys...

Method for producing ZnTe system compound semiconductor single crys...

Method for manufacturing ZnTe compound semiconductor single crystal...

Production method for compound semiconductor single crystal

Process for producing compound semiconductor single crystal

Process for producing single crystal of compound semiconductor and...

Method of manufacturing compound semiconductor single crystal

Method of growing a bulk crystal

Method for growing single crystal

Patents Applicationslast 30 patents

METHOD FOR SYNTHESIZING GROUP II-VI COMPOUND SEMICONDUCTOR POLYCRYS...

HEAT TREATMENT METHOD OF ZNTE SINGLE CRYSTAL SUBSTRATE AND ZNTE SIN...

Heat Treatment Method of ZnTe Single Crystal Substrate and ZnTe Sin...

Method for producing ZnTe system compound semiconductor single crys...

Method for producing ZnTe system compound semiconductor single crys...

Method for producing ZnTe system compound semiconductor single crys...

Method for producing ZnTe system compound semiconductor single crys...

Method for producing ZnTe system compound semiconductor single crys...

Production method for compound semiconductor single crystal

Process for producing single crystal of compound semiconductor and...

Method for manufacturing znte compound semiconductor single crystal...

Process for producing compound semiconductor single crystal