Toshiaki Chiyo

Person

Ama-gun, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Compound semiconductor element based on Group III element nitride
- Patent number 7,312,472
- Issue date Dec 25, 2007
- Toyoda Gosei Co., Ltd.
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing group III nitride compound semiconductor
- Patent number 7,128,846
- Issue date Oct 31, 2006
- Toyoda Gosei Co., Ltd.
- Kazuki Nishijima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type semiconductor manufacturing method and semiconductor device
- Patent number 7,029,939
- Issue date Apr 18, 2006
- Toyoda Gosei Co., Ltd.
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device and method for prod...
- Patent number 6,982,435
- Issue date Jan 3, 2006
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing semiconductor resistance, device for reducing s...
- Patent number 6,943,128
- Issue date Sep 13, 2005
- Toyoda Gosei Co., Ltd.
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device and method of produ...
- Patent number 6,939,733
- Issue date Sep 6, 2005
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device and producing metho...
- Patent number 6,918,961
- Issue date Jul 19, 2005
- Toyoda Gosei Co., Ltd
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III group nitride based semiconductor element and method for manufa...
- Patent number 6,875,629
- Issue date Apr 5, 2005
- Toyoda Gosei Co., Ltd.
- Masanobu Senda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group III nitride compound semiconductor device
- Patent number 6,872,965
- Issue date Mar 29, 2005
- Toyoda Gosei Co., Ltd.
- Jun Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing group III nitride compound semiconductor device
- Patent number 6,861,275
- Issue date Mar 1, 2005
- Toyoda Gosei Co., Ltd.
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device and method for prod...
- Patent number 6,841,808
- Issue date Jan 11, 2005
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing group-III nitride compound semiconductor device
- Patent number 6,830,949
- Issue date Dec 14, 2004
- Toyoda Gosei Co., Ltd.
- Masanobu Senda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group III nitride compound semiconductor device and method of produ...
- Patent number 6,713,789
- Issue date Mar 30, 2004
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing group III nitride compound semiconductor d...
- Patent number 6,623,998
- Issue date Sep 23, 2003
- Toyoda Gosei Co., Ltd
- Naoki Shibata
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Group III nitride compound semiconductor device and producing metho...
- Patent number 6,593,016
- Issue date Jul 15, 2003
- Toyoda Gosei Co., Ltd.
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN type semiconductor device
- Patent number 6,589,808
- Issue date Jul 8, 2003
- Toyoda Gosei Co., Ltd
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device
- Patent number 6,531,719
- Issue date Mar 11, 2003
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Group III nitride compound semiconductor device
- Patent number 6,426,512
- Issue date Jul 30, 2002
- Toyoda Gosei Co., Ltd.
- Jun Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device and method for prod...
- Patent number 6,342,404
- Issue date Jan 29, 2002
- Toyoda Gosei Co., Ltd
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN type semiconductor device fabrication
- Patent number 6,335,217
- Issue date Jan 1, 2002
- Toyoda Gosei Co., Ltd
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN type semiconductor device
- Patent number 6,100,545
- Issue date Aug 8, 2000
- Toyoda Gosei Co., Ltd.
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Process for producing group III nitride compound semiconductor
- Publication number 20050118825
- Publication date Jun 2, 2005
- Kazuki Nishijima
- C30 - CRYSTAL GROWTH
Information Patent Application
III group nitride based semiconductor element and method for manufa...
- Publication number 20040209390
- Publication date Oct 21, 2004
- Masanobu Senda
- C30 - CRYSTAL GROWTH
Information Patent Application
P-type semiconductor manufacturing method and semiconductor device
- Publication number 20040185643
- Publication date Sep 23, 2004
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride compound semiconductor device and method of produ...
- Publication number 20040115917
- Publication date Jun 17, 2004
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Compound semiconductor element based on group III element nitride
- Publication number 20040079949
- Publication date Apr 29, 2004
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride compound semiconductor device and producing metho...
- Publication number 20030205195
- Publication date Nov 6, 2003
- TOYODA GOSEI CO., LTD
- Toshiaki Chiyo
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing group III nitride compound semiconductor device
- Publication number 20030194826
- Publication date Oct 16, 2003
- TOYODA GOSEI CO., LTD
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for reducing semiconductor resistance, device for reducing s...
- Publication number 20030177980
- Publication date Sep 25, 2003
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing group-III nitride compound semiconductor device
- Publication number 20030109076
- Publication date Jun 12, 2003
- Masanobu Senda
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III nitride compound semiconductor device
- Publication number 20030085411
- Publication date May 8, 2003
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Group III nitride compound semiconductor device
- Publication number 20030042505
- Publication date Mar 6, 2003
- Toyoda Gosei Co., Ltd.
- Jun Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride compound semiconductor device and method for prod...
- Publication number 20020070383
- Publication date Jun 13, 2002
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN type semiconductor device
- Publication number 20020042159
- Publication date Apr 11, 2002
- Toyoda Gosei Co., Ltd.
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride compound semiconductor device and method for prod...
- Publication number 20020014629
- Publication date Feb 7, 2002
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride compound semiconductor device
- Publication number 20010050376
- Publication date Dec 13, 2001
- TOYODA GOSEI CO., LTD
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS

Toshiaki Chiyo

Person

Patents Grantslast 30 patents

Compound semiconductor element based on Group III element nitride

Process for producing group III nitride compound semiconductor

P-type semiconductor manufacturing method and semiconductor device

Group III nitride compound semiconductor device and method for prod...

Method for reducing semiconductor resistance, device for reducing s...

Group III nitride compound semiconductor device and method of produ...

Group III nitride compound semiconductor device and producing metho...

III group nitride based semiconductor element and method for manufa...

Group III nitride compound semiconductor device

Method for producing group III nitride compound semiconductor device

Group III nitride compound semiconductor device and method for prod...

Method for producing group-III nitride compound semiconductor device

Group III nitride compound semiconductor device and method of produ...

Method for manufacturing group III nitride compound semiconductor d...

Group III nitride compound semiconductor device and producing metho...

GaN type semiconductor device

Group III nitride compound semiconductor device

Group III nitride compound semiconductor device

Group III nitride compound semiconductor device and method for prod...

GaN type semiconductor device fabrication

GaN type semiconductor device

Patents Applicationslast 30 patents

Process for producing group III nitride compound semiconductor

III group nitride based semiconductor element and method for manufa...

P-type semiconductor manufacturing method and semiconductor device

Group III nitride compound semiconductor device and method of produ...

Compound semiconductor element based on group III element nitride

Group III nitride compound semiconductor device and producing metho...

Method for producing group III nitride compound semiconductor device

Method for reducing semiconductor resistance, device for reducing s...

Method for producing group-III nitride compound semiconductor device

Group III nitride compound semiconductor device

Group III nitride compound semiconductor device

Group III nitride compound semiconductor device and method for prod...

GaN type semiconductor device

Group III nitride compound semiconductor device and method for prod...

Group III nitride compound semiconductor device