Toshiaki Saishoji

Person

Hiratsuka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Apparatus for pulling single crystal by CZ method
- Patent number 7,727,334
- Issue date Jun 1, 2010
- Sumco Techxiv Corporation
- Hiroshi Inagaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Production method for silicon single crystal and production device...
- Patent number 7,141,113
- Issue date Nov 28, 2006
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Kozo Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for pulling single crystal by CZ method
- Patent number 6,977,010
- Issue date Dec 20, 2005
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Hiroshi Inagaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing silicon single crystal having no flaw
- Patent number 6,869,478
- Issue date Mar 22, 2005
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Kozo Nakamura
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon wafer for hydrogen heat treatment and method for manufactur...
- Patent number 6,273,944
- Issue date Aug 14, 2001
- Komatsu Electronic Metals Co., Ltd.
- Toshiaki Saishoji
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon single crystals and wafers adapted...
- Patent number 6,179,910
- Issue date Jan 30, 2001
- Komatsu Electronic Metals Co., LTD
- Takashi Yokoyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer for hydrogen heat treatment and method for manufactur...
- Patent number 6,056,931
- Issue date May 2, 2000
- Komatsu Electronic Metal Co., Ltd.
- Toshiaki Saishoji
- C30 - CRYSTAL GROWTH
Information Patent Grant
Simple method for detecting temperature distributions in single cry...
- Patent number 6,042,646
- Issue date Mar 28, 2000
- Komatsu Electric Metals Co., Ltd.
- Fumitaka Ishikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of controlling defects of a silicon single crystal
- Patent number 5,948,159
- Issue date Sep 7, 1999
- Komatsu Electronic Metals Co., Ltd.
- Kozo Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor single-crystal pulling apparatus
- Patent number 5,824,152
- Issue date Oct 20, 1998
- Komatsu Electronic Metals Co., Ltd.
- Toshimichi Kubota
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Apparatus for pulling single crystal by CZ method
- Publication number 20090173272
- Publication date Jul 9, 2009
- KOMATSU DENSHI KINOZOKU KABUSHIKI KAISHA
- Hiroshi Inagaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for pulling single crystal by CZ method
- Publication number 20080311021
- Publication date Dec 18, 2008
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Hiroshi Inagaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for pulling single crystal by CZ method
- Publication number 20080311019
- Publication date Dec 18, 2008
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Hiroshi Inagaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Evaluating Quality of Silicon Single Crystal
- Publication number 20080302295
- Publication date Dec 11, 2008
- Toshirou Kotooka
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus and method for manufacturing semiconductor single crystal
- Publication number 20080115720
- Publication date May 22, 2008
- Sumco Techxiv Kabushiki Kaisha
- Toshiaki Saishoji
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for pulling single crystal by CZ method
- Publication number 20070256625
- Publication date Nov 8, 2007
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Hiroshi Inagaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing a silicon single crystal
- Publication number 20070240629
- Publication date Oct 18, 2007
- Sumco Techxiv Corporation
- Toshirou Kotooka
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon wafer, its manufacturing method, and its manufacturing appa...
- Publication number 20060016387
- Publication date Jan 26, 2006
- Takashi Yokoyama
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for pulling single crystal by CZ method
- Publication number 20050268840
- Publication date Dec 8, 2005
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Hiroshi Inagaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for pulling single crystal by CZ method
- Publication number 20030154907
- Publication date Aug 21, 2003
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Hiroshi Inagaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing silicon single crystal having no flaw
- Publication number 20030041796
- Publication date Mar 6, 2003
- Kozo Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for pulling single crystal by CZ method
- Publication number 20020144641
- Publication date Oct 10, 2002
- Hiroshi Inagaki
- C30 - CRYSTAL GROWTH

Toshiaki Saishoji

Person

Patents Grantslast 30 patents

Apparatus for pulling single crystal by CZ method

Production method for silicon single crystal and production device...

Apparatus for pulling single crystal by CZ method

Method for producing silicon single crystal having no flaw

Silicon wafer for hydrogen heat treatment and method for manufactur...

Method for manufacturing silicon single crystals and wafers adapted...

Silicon wafer for hydrogen heat treatment and method for manufactur...

Simple method for detecting temperature distributions in single cry...

Method of controlling defects of a silicon single crystal

Semiconductor single-crystal pulling apparatus

Patents Applicationslast 30 patents

Apparatus for pulling single crystal by CZ method

Apparatus for pulling single crystal by CZ method

Apparatus for pulling single crystal by CZ method

Method of Evaluating Quality of Silicon Single Crystal

Apparatus and method for manufacturing semiconductor single crystal

Apparatus for pulling single crystal by CZ method

Method for manufacturing a silicon single crystal

Silicon wafer, its manufacturing method, and its manufacturing appa...

Apparatus for pulling single crystal by CZ method

Apparatus for pulling single crystal by CZ method

Method for producing silicon single crystal having no flaw

Apparatus for pulling single crystal by CZ method