Toshiaki Saishouji

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Hiratsuka, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating a silicon single crystal
- Patent number 6,030,450
- Issue date Feb 29, 2000
- Komatsu Electronic Metals Co., Ltd.
- Toshiaki Saishouji
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of fabricating silicon single crystals
- Patent number 5,968,262
- Issue date Oct 19, 1999
- Komatsu Electronic Metals Co., Ltd.
- Toshiaki Saishouji
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabricating a single-crystal semiconductor
- Patent number 5,968,260
- Issue date Oct 19, 1999
- Komatsu Electronic Metals Co., Ltd.
- Toshiaki Saishouji
- C30 - CRYSTAL GROWTH