Toshiaki Tsutsumi

Person

Hyogo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 9,503,018
- Issue date Nov 22, 2016
- Renesas Electronics Corporation
- Toshiaki Tsutsumi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device
- Patent number 9,252,793
- Issue date Feb 2, 2016
- Renesas Electronics Corporation
- Toshiaki Tsutsumi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 8,338,247
- Issue date Dec 25, 2012
- Renesas Electronics Corporation
- Tadashi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,148,248
- Issue date Apr 3, 2012
- Renesas Electronics Corporation
- Toshiaki Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 8,022,445
- Issue date Sep 20, 2011
- Renesas Electronics Corporation
- Tadashi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 7,936,016
- Issue date May 3, 2011
- Renesas Electronics Corporation
- Toshiaki Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device carrying out ion impla...
- Patent number 7,872,314
- Issue date Jan 18, 2011
- Renesas Electronics Corporation
- Tadashi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device carrying out ion impla...
- Patent number 7,696,050
- Issue date Apr 13, 2010
- Renesas Technology Corp.
- Tadashi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capture of residual refractory metal within semiconductor device
- Patent number 7,408,239
- Issue date Aug 5, 2008
- Renesas Technology Corp.
- Takeshi Kamino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film transistor and method of fabricating the same
- Patent number 7,321,152
- Issue date Jan 22, 2008
- Renesas Technology Corp.
- Shigeto Maegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film transistor and method of fabricating the same
- Patent number 7,187,040
- Issue date Mar 6, 2007
- Renesas Technology Corp.
- Shigeto Maegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capture of residual refractory metal within semiconductor device
- Patent number 7,180,153
- Issue date Feb 20, 2007
- Renesas Technology Corp.
- Takeshi Kamino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film transistor and method of fabricating the same
- Patent number 7,112,854
- Issue date Sep 26, 2006
- Renesas Technology Corporation
- Shigeto Maegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and its manufacturing method
- Patent number 6,657,265
- Issue date Dec 2, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Masahiko Fujisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 6,281,051
- Issue date Aug 28, 2001
- Mitsubishi Denki Kabushiki Kaisha
- Toshiaki Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS transistor with a three-layer device isolation film surrounding...
- Patent number 6,124,622
- Issue date Sep 26, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Toshiaki Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Misfet semiconductor device having different vertical levels
- Patent number 6,087,727
- Issue date Jul 11, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Toshiaki Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an element isolating film having a f...
- Patent number 5,844,274
- Issue date Dec 1, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Toshiaki Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation trench structures protruding above a substrate surface
- Patent number 5,789,792
- Issue date Aug 4, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Toshiaki Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160142011
- Publication date May 19, 2016
- RENESAS ELECTRONICS CORPORATION
- Toshiaki TSUTSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130314165
- Publication date Nov 28, 2013
- Toshiaki Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20110207317
- Publication date Aug 25, 2011
- RENESAS ELECTRONICS CORPORATION
- Toshiaki Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20110037103
- Publication date Feb 17, 2011
- Renesas Electronics Corporation
- Tadashi YAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20100230761
- Publication date Sep 16, 2010
- RENESAS TECHNOLOGY CORP.
- Tadashi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE CARRYING OUT ION IMPLA...
- Publication number 20100171183
- Publication date Jul 8, 2010
- Renesas Technology Corp.
- Tadashi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20090291537
- Publication date Nov 26, 2009
- Renesas Technology Corp.
- Tadashi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20090283909
- Publication date Nov 19, 2009
- RENESAS TECHNOLOGY CORP.
- Toshiaki TSUTSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20090079007
- Publication date Mar 26, 2009
- RENESAS TECHNOLOGY CORP.
- Tadashi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capture of residual refractory metal within semiconductor device
- Publication number 20080272461
- Publication date Nov 6, 2008
- RENESAS TECHNOLOGY CORP.
- Takeshi Kamino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20080121950
- Publication date May 29, 2008
- Renesas Technology Corp.
- Tadashi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING CMIS TRANSISTOR
- Publication number 20070284671
- Publication date Dec 13, 2007
- Renesas Technology Corp.
- Toshiaki Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capture of residual refractory metal within semiconductor device
- Publication number 20070114666
- Publication date May 24, 2007
- RENESAS TECHNOLOGY CORP.
- Takeshi Kamino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE CARRYING OUT ION IMPLA...
- Publication number 20070077736
- Publication date Apr 5, 2007
- Renesas Technology Corp.
- Tadashi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin-film transistor and method of fabricating the same
- Publication number 20060267012
- Publication date Nov 30, 2006
- Renesas Technology Corp.
- Shigeto Maegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin-film transistor and method of fabricating the same
- Publication number 20050167673
- Publication date Aug 4, 2005
- Renesas Technology Corp.
- Shigeto Maegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with trench isolation and fabrication method t...
- Publication number 20030098491
- Publication date May 29, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Toshiaki Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20020140097
- Publication date Oct 3, 2002
- Takeshi Kamino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and its manufacturing method
- Publication number 20020109196
- Publication date Aug 15, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Masahiko Fujisawa
- H01 - BASIC ELECTRIC ELEMENTS

Toshiaki Tsutsumi

Person

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device

Semiconductor device and method of manufacturing same

Semiconductor device and manufacturing method thereof

Method of manufacturing a semiconductor device

Semiconductor device and manufacturing method thereof

Method of manufacturing semiconductor device carrying out ion impla...

Method of manufacturing semiconductor device carrying out ion impla...

Capture of residual refractory metal within semiconductor device

Thin-film transistor and method of fabricating the same

Thin-film transistor and method of fabricating the same

Capture of residual refractory metal within semiconductor device

Thin-film transistor and method of fabricating the same

Semiconductor device and its manufacturing method

Semiconductor device and manufacturing method thereof

MIS transistor with a three-layer device isolation film surrounding...

Misfet semiconductor device having different vertical levels

Semiconductor device including an element isolating film having a f...

Isolation trench structures protruding above a substrate surface

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE CARRYING OUT ION IMPLA...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Capture of residual refractory metal within semiconductor device

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING CMIS TRANSISTOR

Capture of residual refractory metal within semiconductor device

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE CARRYING OUT ION IMPLA...

Thin-film transistor and method of fabricating the same

Thin-film transistor and method of fabricating the same

Semiconductor device with trench isolation and fabrication method t...

Semiconductor device

Semiconductor device and its manufacturing method