Toshiharu Katayama

Person

Hyogo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Device inspecting for defect on semiconductor wafer surface
- Patent number 7,023,541
- Issue date Apr 4, 2006
- Renesas Technology Corp.
- Mariko Mizuo
- G01 - MEASURING TESTING
Information Patent Grant
Method of testing semiconductor device
- Patent number 6,650,129
- Issue date Nov 18, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Toshiharu Katayama
- G01 - MEASURING TESTING
Information Patent Grant
Method of and apparatus for inspecting semiconductor device
- Patent number 6,636,824
- Issue date Oct 21, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Kouetsu Sawai
- G01 - MEASURING TESTING
Information Patent Grant
Evaluation method for semiconductor devices
- Patent number 5,850,149
- Issue date Dec 15, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Toshiharu Katayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising trench EEPROM
- Patent number 5,786,612
- Issue date Jul 28, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Naoko Otani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor information storage device
- Patent number 5,708,285
- Issue date Jan 13, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Naoko Otani
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of removing etching residues
- Patent number 5,705,027
- Issue date Jan 6, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Toshiharu Katayama
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Method of evaluating a thin film for use in semiconductor device
- Patent number 5,677,204
- Issue date Oct 14, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Yukari Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 5,444,278
- Issue date Aug 22, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Toshiharu Katayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having impurity diffusion region formed in sub...
- Patent number 5,243,219
- Issue date Sep 7, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Toshiharu Katayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced resistance contact region for semiconductor device
- Patent number 5,047,831
- Issue date Sep 10, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Toshiharu Katayama
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Device inspecting for defect on semiconductor wafer surface
- Publication number 20040080742
- Publication date Apr 29, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Mariko Mizuo
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF TESTING SEMICONDUCTOR DEVICE
- Publication number 20030210062
- Publication date Nov 13, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Toshiharu Katayama
- G01 - MEASURING TESTING

Toshiharu Katayama

Person

Patents Grantslast 30 patents

Device inspecting for defect on semiconductor wafer surface

Method of testing semiconductor device

Method of and apparatus for inspecting semiconductor device

Evaluation method for semiconductor devices

Semiconductor device comprising trench EEPROM

Non-volatile semiconductor information storage device

Method of removing etching residues

Method of evaluating a thin film for use in semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device having impurity diffusion region formed in sub...

Reduced resistance contact region for semiconductor device

Patents Applicationslast 30 patents

Device inspecting for defect on semiconductor wafer surface

METHOD OF TESTING SEMICONDUCTOR DEVICE