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Toshiharu NAGUMO
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Kanagawa, JP
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Patents Grants
last 30 patents
Information
Patent Grant
Semiconductor device having compressively strained channel region a...
Patent number
10,069,010
Issue date
Sep 4, 2018
Renesas Electronics Corporation
Toshiharu Nagumo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device having compressively strained channel region a...
Patent number
10,020,399
Issue date
Jul 10, 2018
Renesas Electronics Corporation
Toshiharu Nagumo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High-electron-mobility transistor with protective diode
Patent number
9,589,951
Issue date
Mar 7, 2017
Renesas Electronics Corporation
Toshiharu Nagumo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Self-aligned dual-height isolation for bulk FinFET
Patent number
9,564,486
Issue date
Feb 7, 2017
International Business Machines Corporation
Murat Kerem Akarvardar
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device and forming method
Patent number
9,553,131
Issue date
Jan 24, 2017
Renesas Electronics Corporation
Toshiharu Nagumo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device having finFET structures and method of making...
Patent number
9,362,308
Issue date
Jun 7, 2016
Renesas Electronics Corporation
Toshiharu Nagumo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Self-aligned dual-height isolation for bulk FinFET
Patent number
9,324,790
Issue date
Apr 26, 2016
International Business Machines Corporation
Murat Kerem Akarvardar
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Device isolation in FinFET CMOS
Patent number
9,305,846
Issue date
Apr 5, 2016
GLOBALFOUNDRIES Inc.
Ajey Poovannummoottil Jacob
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device with group-III nitride compound semiconductor...
Patent number
9,231,105
Issue date
Jan 5, 2016
Renesas Electronics Corporation
Ippei Kume
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Field effect transistor with channel core modified to reduce leakag...
Patent number
9,196,715
Issue date
Nov 24, 2015
Renesas Electronics Corporation
Tomohiro Hirai
B82 - NANO-TECHNOLOGY
Information
Patent Grant
Field effect transistor with channel core modified for a backgate b...
Patent number
9,190,505
Issue date
Nov 17, 2015
Renesas Electronics Corporation
Tomohiro Hirai
B82 - NANO-TECHNOLOGY
Information
Patent Grant
Retrograde doped layer for device isolation
Patent number
9,190,411
Issue date
Nov 17, 2015
GLOBALFOUNDRIES Inc.
Ajey Poovannummoottil Jacob
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Device isolation in finFET CMOS
Patent number
8,963,259
Issue date
Feb 24, 2015
GLOBALFOUNDRIES Inc.
Ajey P. Jacob
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
SEMICONDUCTOR DEVICE HAVING COMPRESSIVELY STRAINED CHANNEL REGION A...
Publication number
20180301552
Publication date
Oct 18, 2018
RENESAS ELECTRONICS CORPORATION
Toshiharu NAGUMO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE
Publication number
20160079426
Publication date
Mar 17, 2016
RENESAS ELECTRONICS CORPORATION
Ippei Kume
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE
Publication number
20160056145
Publication date
Feb 25, 2016
Renesas Electronics Corporation
Toshiharu Nagumo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE AND FORMING METHOD
Publication number
20160056207
Publication date
Feb 25, 2016
RENESAS ELECTRONICS CORPORATION
Toshiharu NAGUMO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
RETROGRADE DOPED LAYER FOR DEVICE ISOLATION
Publication number
20160035728
Publication date
Feb 4, 2016
GLOBALFOUNDRIES INC.
Ajey Poovannummoottil Jacob
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FIELD EFFECT TRANSISTOR WITH CHANNEL CORE MODIFIED FOR A BACKGATE B...
Publication number
20160027872
Publication date
Jan 28, 2016
RENESAS ELECTRONICS CORPORATION
Tomohiro HIRAI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FIELD EFFECT TRANSISTOR WITH CHANNEL CORE MODIFIED TO REDUCE LEAKAG...
Publication number
20160020312
Publication date
Jan 21, 2016
RENESAS ELECTRONICS CORPORATION
Tomohiro HIRAI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SELF-ALIGNED DUAL-HEIGHT ISOLATION FOR BULK FINFET
Publication number
20150372080
Publication date
Dec 24, 2015
International Business Machines Corporation
Murat Kerem Akarvardar
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SELF-ALIGNED DUAL-HEIGHT ISOLATION FOR BULK FINFET
Publication number
20150137308
Publication date
May 21, 2015
International Business Machines Corporation
Murat Kerem Akarvardar
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
DEVICE ISOLATION IN FINFET CMOS
Publication number
20150140761
Publication date
May 21, 2015
GLOBALFOUNDRIES INC.
Ajey Poovannummoottil Jacob
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE
Publication number
20150060875
Publication date
Mar 5, 2015
Renesas Electronics Corporation
Ippei Kume
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
RETROGRADE DOPED LAYER FOR DEVICE ISOLATION
Publication number
20140361377
Publication date
Dec 11, 2014
Ajey Poovannummoottil Jacob
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
DEVICE ISOLATION IN FINFET CMOS
Publication number
20140353801
Publication date
Dec 4, 2014
Ajey P. Jacob
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE HAVING FINFET STRUCTURES AND METHOD OF MAKING...
Publication number
20140252483
Publication date
Sep 11, 2014
RENESAS ELECTRONICS CORPORATION
Toshiharu NAGUMO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE HAVING COMPRESSIVELY STRAINED CHANNEL REGION A...
Publication number
20140239399
Publication date
Aug 28, 2014
RENESAS ELECTRONICS CORPORATION
Toshiharu NAGUMO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FIELD EFFECT TRANSISTOR WITH CHANNEL CORE MODIFIED TO REDUCE LEAKAG...
Publication number
20140183451
Publication date
Jul 3, 2014
RENESAS ELECTRONICS CORPORATION
Tomohiro HIRAI
B82 - NANO-TECHNOLOGY
Information
Patent Application
FIELD EFFECT TRANSISTOR WITH CHANNEL CORE MODIFIED FOR A BACKGATE B...
Publication number
20140183452
Publication date
Jul 3, 2014
RENESAS ELECTRONICS CORPORATION
Tomohiro HIRAI
B82 - NANO-TECHNOLOGY
Information
Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, AND METHODS OF MANUFACTU...
Publication number
20120313172
Publication date
Dec 13, 2012
Renesas Electronics Corporation
Masaharu MATSUDAIRA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
EVALUATION METHOD, EVALUATION APPARATUS, AND SIMULATION METHOD OF S...
Publication number
20120065920
Publication date
Mar 15, 2012
RENESAS ELECTRONICS CORPORATION
Toshiharu NAGUMO
G01 - MEASURING TESTING