Toshiki Shinmura

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor having a two layered gate electrode
- Patent number 6,531,749
- Issue date Mar 11, 2003
- NEC Corporation
- Takeo Matsuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Titanium polycide gate electrode and method of forming a titanium p...
- Patent number 6,495,438
- Issue date Dec 17, 2002
- NEC Corporation
- Toshiki Shinmura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of fabricating semiconductor device having low-resistive co...
- Patent number 6,440,828
- Issue date Aug 27, 2002
- NEC Corporation
- Shunichiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device with polycide gate struc...
- Patent number 6,358,846
- Issue date Mar 19, 2002
- NEC Corporation
- Toshiki Shinmura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 6,281,052
- Issue date Aug 28, 2001
- NEC Corporation
- Toshiki Shinmura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming thin metal films
- Patent number 6,113,750
- Issue date Sep 5, 2000
- NEC Corporation
- Toshiki Shinmura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Collimated sputtering method and system used therefor
- Patent number 6,030,511
- Issue date Feb 29, 2000
- NEC Corporation
- Toshiki Shinmura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming an interconnection in a contact hole in an insula...
- Patent number 5,985,756
- Issue date Nov 16, 1999
- NEC Corporation
- Toshiki Shinmura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simulation apparatus for optimizing sputtering apparatus and simula...
- Patent number 5,850,356
- Issue date Dec 15, 1998
- NEC Corporation
- Hiroaki Yamada
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Configuration simulating method employing string model for simulati...
- Patent number 5,815,684
- Issue date Sep 29, 1998
- NEC Corporation
- Toshiyuki Ohta
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Sputtering apparatus
- Patent number 5,744,016
- Issue date Apr 28, 1998
- NEC Corporation
- Yoshiaki Yamada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
Method of manufacturing a field effect transistor having a two-laye...
- Publication number 20030122179
- Publication date Jul 3, 2003
- NEC Corporation
- Takeo Matsuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device
- Publication number 20010036728
- Publication date Nov 1, 2001
- NEC Corporation
- Toshiki Shinmura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Toshiki Shinmura

Person

Patents Grantslast 30 patents

Field effect transistor having a two layered gate electrode

Titanium polycide gate electrode and method of forming a titanium p...

Process of fabricating semiconductor device having low-resistive co...

Method of fabricating semiconductor device with polycide gate struc...

Method of manufacturing semiconductor device

Method of forming thin metal films

Collimated sputtering method and system used therefor

Method of forming an interconnection in a contact hole in an insula...

Simulation apparatus for optimizing sputtering apparatus and simula...

Configuration simulating method employing string model for simulati...

Sputtering apparatus

Patents Applicationslast 30 patents

Method of manufacturing a field effect transistor having a two-laye...

Method of manufacturing semiconductor device