Toshinori Taishi

Person

Koshoku-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Production apparatus for gallium oxide crystal capable of preventin...
- Patent number 11,795,568
- Issue date Oct 24, 2023
- Fujikoshi Machinery Corp.
- Keigo Hoshikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium oxide crystal manufacturing device
- Patent number 11,674,239
- Issue date Jun 13, 2023
- Fujikoshi Machinery Corp.
- Keigo Hoshikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing dislocation-free silicon single crystal
- Patent number 6,451,108
- Issue date Sep 17, 2002
- President of Shinshu University
- Keigo Hoshikawa
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
PRODUCTION APPARATUS FOR METAL OXIDE SINGLE CRYSTAL AND PRODUCTION...
- Publication number 20230235478
- Publication date Jul 27, 2023
- Shinshu University
- Keigo HOSHIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION APPARATUS FOR GALLIUM OXIDE CRYSTAL AND PRODUCTION METHO...
- Publication number 20220243357
- Publication date Aug 4, 2022
- Fujikoshi Machinery Corp.
- Keigo HOSHIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION APPARATUS FOR METAL OXIDE SINGLE CRYSTAL
- Publication number 20220243358
- Publication date Aug 4, 2022
- Fujikoshi Machinery Corp.
- Keigo HOSHIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION APPARATUS FOR GALLIUM OXIDE CRYSTAL
- Publication number 20220112622
- Publication date Apr 14, 2022
- Fujikoshi Machinery Corp.
- Keigo HOSHIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM OXIDE CRYSTAL MANUFACTURING DEVICE
- Publication number 20210269941
- Publication date Sep 2, 2021
- Fujikoshi Machinery Corp.
- Keigo HOSHIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION APPARATUS FOR GALLIUM OXIDE CRYSTAL, PRODUCTION METHOD F...
- Publication number 20200115817
- Publication date Apr 16, 2020
- Shinshu University
- Keigo HOSHIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing dislocation-free silicon single crystal
- Publication number 20010020438
- Publication date Sep 13, 2001
- President of Shinshu University
- Keigo Hoshikawa
- C30 - CRYSTAL GROWTH

Toshinori Taishi

Person

Patents Grantslast 30 patents

Production apparatus for gallium oxide crystal capable of preventin...

Gallium oxide crystal manufacturing device

Method for manufacturing dislocation-free silicon single crystal

Patents Applicationslast 30 patents

PRODUCTION APPARATUS FOR METAL OXIDE SINGLE CRYSTAL AND PRODUCTION...

PRODUCTION APPARATUS FOR GALLIUM OXIDE CRYSTAL AND PRODUCTION METHO...

PRODUCTION APPARATUS FOR METAL OXIDE SINGLE CRYSTAL

PRODUCTION APPARATUS FOR GALLIUM OXIDE CRYSTAL

GALLIUM OXIDE CRYSTAL MANUFACTURING DEVICE

PRODUCTION APPARATUS FOR GALLIUM OXIDE CRYSTAL, PRODUCTION METHOD F...

Method for manufacturing dislocation-free silicon single crystal