Toshio Nakanishi

Person

Amagasaki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Plasma film-forming apparatus and substrate pedestal
- Patent number 10,968,513
- Issue date Apr 6, 2021
- Tokyo Electron Limited
- Masashi Imanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma film-forming method and plasma film-forming apparatus
- Patent number 10,190,217
- Issue date Jan 29, 2019
- Tokyo Electron Limited
- Minoru Honda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Processing method of silicon nitride film and forming method of sil...
- Patent number 10,017,853
- Issue date Jul 10, 2018
- Tokyo Electron Limited
- Toshio Nakanishi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma processing method and plasma processing apparatus
- Patent number 9,779,936
- Issue date Oct 3, 2017
- Tokyo Electron Limited
- Daisuke Katayama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma CVD method, method for forming silicon nitride film and meth...
- Patent number 8,569,186
- Issue date Oct 29, 2013
- Tokyo Electron Limited
- Masayuki Kohno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma cleaning method and plasma CVD method
- Patent number 8,366,953
- Issue date Feb 5, 2013
- Tokyo Electron Limited
- Masayuki Kohno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma CVD method, method for forming silicon nitride film and meth...
- Patent number 8,329,596
- Issue date Dec 11, 2012
- Tokyo Electron Limited
- Masayuki Kohno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming silicon nitride film, method for manufacturing n...
- Patent number 8,318,614
- Issue date Nov 27, 2012
- Tokyo Electron Limited
- Masayuki Kohno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
MOS semiconductor memory device having charge storage region formed...
- Patent number 8,258,571
- Issue date Sep 4, 2012
- Tokyo Electron Limited
- Tetsuo Endoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming insulating film and method for manufacturing sem...
- Patent number 8,247,331
- Issue date Aug 21, 2012
- Tokyo Electron Limited
- Minoru Honda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma processing method
- Patent number 8,183,165
- Issue date May 22, 2012
- Tokyo Electron Limited
- Seiji Matsuyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming insulating film and method for manufacturing sem...
- Patent number 8,158,535
- Issue date Apr 17, 2012
- Tokyo Electron Limited
- Minoru Honda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma CVD method, method for forming silicon nitride film and meth...
- Patent number 8,138,103
- Issue date Mar 20, 2012
- Tokyo Electron Limited
- Masayuki Kohno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Forming a MOS memory device having a dielectric film laminate as a...
- Patent number 8,124,484
- Issue date Feb 28, 2012
- Tohoku University
- Tetsuo Endoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Forming a silicon nitride film by plasma CVD
- Patent number 8,119,545
- Issue date Feb 21, 2012
- Tokyo Electron Limited
- Minoru Honda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma CVD method, silicon nitride film formation method, semicondu...
- Patent number 8,114,790
- Issue date Feb 14, 2012
- Tokyo Electron Limited
- Masayuki Kohno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of modifying insulating film
- Patent number 8,021,987
- Issue date Sep 20, 2011
- Tokyo Electron Limited
- Takuya Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma nitriding method, method for manufacturing semiconductor dev...
- Patent number 7,968,470
- Issue date Jun 28, 2011
- Tohoku University
- Tadahiro Ohmi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming insulating film and method for manufacturing sem...
- Patent number 7,960,293
- Issue date Jun 14, 2011
- Tokyo Electron Limited
- Minoru Honda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming gate insulation film, semiconductor device, and c...
- Patent number 7,915,177
- Issue date Mar 29, 2011
- Toyko Electron Limited
- Tatsuo Nishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma processing method and computer storage medium
- Patent number 7,897,518
- Issue date Mar 1, 2011
- Tokyo Electron Limited
- Seiji Matsuyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for nitriding substrate and method for forming insulating film
- Patent number 7,820,557
- Issue date Oct 26, 2010
- Tokyo Electron Limited
- Minoru Honda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RLSA CVD deposition control using halogen gas for hydrogen scavenging
- Patent number 7,763,551
- Issue date Jul 27, 2010
- Tokyo Electron Limited
- Jozef Brcka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma processing method and computer storage medium
- Patent number 7,723,241
- Issue date May 25, 2010
- Tokyo Electron Limited
- Seiji Matsuyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming gate insulating film, semiconductor device and co...
- Patent number 7,674,722
- Issue date Mar 9, 2010
- Tokyo Electron Limited
- Tatsuo Nishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming insulation film
- Patent number 7,662,236
- Issue date Feb 16, 2010
- Tokyo Electron Limited
- Takuya Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of modifying insulating film
- Patent number 7,655,574
- Issue date Feb 2, 2010
- Tokyo Electron Limited
- Takuya Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming underlying insulation film
- Patent number 7,622,402
- Issue date Nov 24, 2009
- Tokyo Electron Limited
- Takuya Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming insulation film
- Patent number 7,446,052
- Issue date Nov 4, 2008
- Tokyo Electron Limited
- Takuya Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitriding method of gate oxide film
- Patent number 7,429,539
- Issue date Sep 30, 2008
- Tokyo Electron Limited
- Seiji Matsuyama
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PLASMA FILM-FORMING APPARATUS AND SUBSTRATE PEDESTAL
- Publication number 20170369996
- Publication date Dec 28, 2017
- TOKYO ELECTRON LIMITED
- Masashi Imanaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PLASMA FILM-FORMING METHOD AND PLASMA FILM-FORMING APPARATUS
- Publication number 20170370000
- Publication date Dec 28, 2017
- TOKYO ELECTRON LIMITED
- Minoru Honda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PROCESSING METHOD OF SILICON NITRIDE FILM AND FORMING METHOD OF SIL...
- Publication number 20170356084
- Publication date Dec 14, 2017
- TOKYO ELECTRON LIMITED
- Toshio Nakanishi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MICROWAVE PLASMA PROCESSING APPARATUS AND MICROWAVE PLASMA PROCESSI...
- Publication number 20170358835
- Publication date Dec 14, 2017
- TOKYO ELECTRON LIMITED
- Toshio Nakanishi
- G02 - OPTICS
Information Patent Application
PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
- Publication number 20150162193
- Publication date Jun 11, 2015
- TOKYO ELECTRON LIMITED
- Daisuke Katayama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
- Publication number 20150093886
- Publication date Apr 2, 2015
- TOKYO ELECTRON LIMITED
- Minoru Honda
- C30 - CRYSTAL GROWTH
Information Patent Application
PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM AND METH...
- Publication number 20130072033
- Publication date Mar 21, 2013
- TOKYO ELECTRON LIMITED
- Masayuki KOHNO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CRYSTALLINE SILICON FILM FORMING METHOD AND PLASMA CVD APPARATUS
- Publication number 20120315745
- Publication date Dec 13, 2012
- TOKYO ELECTRON LIMITED
- Daisuke Katayama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING SILICON NITRIDE FILM AND METHOD OF MANUFACTURING...
- Publication number 20120208376
- Publication date Aug 16, 2012
- TOKYO ELECTRON LIMITED
- Minoru Honda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM AND METH...
- Publication number 20120178268
- Publication date Jul 12, 2012
- TOKYO ELECTRON LIMITED
- Masayuki KOHNO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON DIOXIDE FILM AND PROCESS FOR PRODUCTION THEREOF, COMPUTER-R...
- Publication number 20120126376
- Publication date May 24, 2012
- TOKYO ELECTRON LIMITED
- Minoru Honda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON OXIDE FILM, METHOD FOR FORMING SILICON OXIDE FILM, AND PLAS...
- Publication number 20110206590
- Publication date Aug 25, 2011
- TOKYO ELECTRON LIMITED
- Minoru Honda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PLASMA PROCESSING METHOD AND COMPUTER STORAGE MEDIUM
- Publication number 20110124202
- Publication date May 26, 2011
- TOKYO ELECTRON LIMITED
- Seiji Matsuyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING A MOS SEMICONDUCTOR MEMORY DEVICE, AND PLA...
- Publication number 20110086485
- Publication date Apr 14, 2011
- TOKYO ELECTRON LIMITED
- Tetsuo Endoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PROCESS FOR PRODUCING SILICON NITRIDE FILM, PROCESS FOR PRODUCING S...
- Publication number 20110086517
- Publication date Apr 14, 2011
- TOKYO ELECTRON LIMITED
- Minoru Honda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEM...
- Publication number 20100323529
- Publication date Dec 23, 2010
- TOKYO ELECTRON LIMITED
- Minoru Honda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEM...
- Publication number 20100323531
- Publication date Dec 23, 2010
- Tokyo Electron Limited
- Minoru Honda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA PROCESSING APPARATUS
- Publication number 20100307684
- Publication date Dec 9, 2010
- TOKYO ELECTRON LIMITED
- Ryosaku Ota
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
MOS SEMICONDUCTOR MEMORY DEVICE
- Publication number 20100283097
- Publication date Nov 11, 2010
- TOKYO ELECTRON LIMITED
- Tetsuo Endoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PLASMA PROCESSING METHOD AND COMPUTER STORAGE MEDIUM
- Publication number 20100196627
- Publication date Aug 5, 2010
- TOKYO ELECTRON LIMITED
- Seiji Matsuyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON NITRIDE FILM AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
- Publication number 20100140683
- Publication date Jun 10, 2010
- TOKYO ELECTRON LIMITED
- Seiichi Miyazaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING GATE INSULATION FILM, SEMICONDUCTOR DEVICE, AND C...
- Publication number 20100130023
- Publication date May 27, 2010
- TOKYO ELECTRON LIMITED
- Tatsuo Nishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MODIFYING INSULATING FILM
- Publication number 20100105215
- Publication date Apr 29, 2010
- TOKYO ELECTRON LIMITED
- Takuya Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Insulation Film
- Publication number 20100096707
- Publication date Apr 22, 2010
- TOKYO ELECTRON LIMITED
- Takuya Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SILICON NITRIDE FILM, METHOD FOR MANUFACTURING N...
- Publication number 20100052040
- Publication date Mar 4, 2010
- TOKYO ELECTRON LIMITED
- Masayuki Kohno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PLASMA CLEANING METHOD AND PLASMA CVD METHOD
- Publication number 20090308840
- Publication date Dec 17, 2009
- TOKYO ELECTRON LIMITED
- Masayuki Kohno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR NITRIDING SUBSTRATE AND METHOD FOR FORMING INSULATING FILM
- Publication number 20090269940
- Publication date Oct 29, 2009
- TOKYO ELECTRON LIMITED
- Minoru Honda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RLSA CVD DEPOSITION CONTROL USING HALOGEN GAS FOR HYDROGEN SCAVENGING
- Publication number 20090241310
- Publication date Oct 1, 2009
- TOKYO ELECTRON LIMITED
- Jozef Brcka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEM...
- Publication number 20090239364
- Publication date Sep 24, 2009
- TOKYO ELECTRON LIMITED
- Tatsuo Nishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM, METHOD...
- Publication number 20090203228
- Publication date Aug 13, 2009
- TOKYO ELECTRON LIMITED
- Masayuki Kohno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Toshio Nakanishi

Person

Patents Grantslast 30 patents

Plasma film-forming apparatus and substrate pedestal

Plasma film-forming method and plasma film-forming apparatus

Processing method of silicon nitride film and forming method of sil...

Plasma processing method and plasma processing apparatus

Plasma CVD method, method for forming silicon nitride film and meth...

Plasma cleaning method and plasma CVD method

Plasma CVD method, method for forming silicon nitride film and meth...

Method for forming silicon nitride film, method for manufacturing n...

MOS semiconductor memory device having charge storage region formed...

Method for forming insulating film and method for manufacturing sem...

Plasma processing method

Method for forming insulating film and method for manufacturing sem...

Plasma CVD method, method for forming silicon nitride film and meth...

Forming a MOS memory device having a dielectric film laminate as a...

Forming a silicon nitride film by plasma CVD

Plasma CVD method, silicon nitride film formation method, semicondu...

Method of modifying insulating film

Plasma nitriding method, method for manufacturing semiconductor dev...

Method for forming insulating film and method for manufacturing sem...

Method of forming gate insulation film, semiconductor device, and c...

Plasma processing method and computer storage medium

Method for nitriding substrate and method for forming insulating film

RLSA CVD deposition control using halogen gas for hydrogen scavenging

Plasma processing method and computer storage medium

Method of forming gate insulating film, semiconductor device and co...

Method for forming insulation film

Method of modifying insulating film

Method for forming underlying insulation film

Method for forming insulation film

Nitriding method of gate oxide film

Patents Applicationslast 30 patents

PLASMA FILM-FORMING APPARATUS AND SUBSTRATE PEDESTAL

PLASMA FILM-FORMING METHOD AND PLASMA FILM-FORMING APPARATUS

PROCESSING METHOD OF SILICON NITRIDE FILM AND FORMING METHOD OF SIL...

MICROWAVE PLASMA PROCESSING APPARATUS AND MICROWAVE PLASMA PROCESSI...

PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM AND METH...

CRYSTALLINE SILICON FILM FORMING METHOD AND PLASMA CVD APPARATUS

METHOD OF FORMING SILICON NITRIDE FILM AND METHOD OF MANUFACTURING...

PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM AND METH...

SILICON DIOXIDE FILM AND PROCESS FOR PRODUCTION THEREOF, COMPUTER-R...

SILICON OXIDE FILM, METHOD FOR FORMING SILICON OXIDE FILM, AND PLAS...

PLASMA PROCESSING METHOD AND COMPUTER STORAGE MEDIUM

METHOD FOR MANUFACTURING A MOS SEMICONDUCTOR MEMORY DEVICE, AND PLA...

PROCESS FOR PRODUCING SILICON NITRIDE FILM, PROCESS FOR PRODUCING S...

METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEM...

METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEM...

PLASMA PROCESSING APPARATUS

MOS SEMICONDUCTOR MEMORY DEVICE

PLASMA PROCESSING METHOD AND COMPUTER STORAGE MEDIUM

SILICON NITRIDE FILM AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

METHOD OF FORMING GATE INSULATION FILM, SEMICONDUCTOR DEVICE, AND C...

METHOD OF MODIFYING INSULATING FILM

Method for Forming Insulation Film

METHOD FOR FORMING SILICON NITRIDE FILM, METHOD FOR MANUFACTURING N...

PLASMA CLEANING METHOD AND PLASMA CVD METHOD

METHOD FOR NITRIDING SUBSTRATE AND METHOD FOR FORMING INSULATING FILM

RLSA CVD DEPOSITION CONTROL USING HALOGEN GAS FOR HYDROGEN SCAVENGING

METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEM...

PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM, METHOD...