Toshio Oshima

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Atsugi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming a high temperature stable ohmic contact to a III-...
- Patent number 4,889,831
- Issue date Dec 26, 1989
- Fujitsu Limited
- Kazuaki Ishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device utilizing multiquantum wells
- Patent number 4,868,612
- Issue date Sep 19, 1989
- Fujitsu Limited
- Toshio Oshima
- B82 - NANO-TECHNOLOGY