Toshitaka Fukushima

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Schottky barrier diode clamp transistor
- Patent number 4,943,742
- Issue date Jul 24, 1990
- Fujitsu Limited
- Toshitaka Fukushima
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor programmable memory device
- Patent number 4,922,319
- Issue date May 1, 1990
- Fujitsu Limited
- Toshitaka Fukushima
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor wafer-scale integrated device composed of interconnec...
- Patent number 4,907,062
- Issue date Mar 6, 1990
- Fujitsu Limited
- Toshitaka Fukushima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming groove isolation filled with dielectric for semic...
- Patent number 4,866,004
- Issue date Sep 12, 1989
- Fujitsu Limited
- Toshitaka Fukushima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test method for detecting faulty memory cell of a programmable device
- Patent number 4,862,459
- Issue date Aug 29, 1989
- Fujitsu Limited
- Toshitaka Fukushima
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of producing isolation groove structure
- Patent number 4,808,550
- Issue date Feb 28, 1989
- Fujitsu Limited
- Toshitaka Fukushima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar PROM having transistors with reduced base widths
- Patent number 4,805,141
- Issue date Feb 14, 1989
- Fujitsu Limited
- Toshitaka Fukushima
- G11 - INFORMATION STORAGE
Information Patent Grant
Junction-shorting type semiconductor read-only memory having increa...
- Patent number 4,792,833
- Issue date Dec 20, 1988
- Fujitsu Limited
- Toshitaka Fukushima
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having a transistor with increased current amp...
- Patent number 4,654,688
- Issue date Mar 31, 1987
- Fujitsu Limited
- Toshitaka Fukushima
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device utilizing multi-stage decoding
- Patent number 4,617,653
- Issue date Oct 14, 1986
- Fujitsu Limited
- Yasuro Matsuzaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Tristate output buffer with high-impedance state responsive to incr...
- Patent number 4,498,022
- Issue date Feb 5, 1985
- Fujitsu Limited
- Kazumi Koyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Contact structure of semiconductor device
- Patent number 4,482,914
- Issue date Nov 13, 1984
- Fujitsu Limited
- Toru Mano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an ohmic contact to a semiconductor substrate
- Patent number 4,468,856
- Issue date Sep 4, 1984
- Fujitsu Limited
- Toshitaka Fukushima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with deep oxide isolation
- Patent number 4,466,012
- Issue date Aug 14, 1984
- Fujitsu Limited
- Toshitaka Fukushima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field programmable device with circuitry for detecting poor insulat...
- Patent number 4,459,694
- Issue date Jul 10, 1984
- Fujitsu Limited
- Kouji Ueno
- G11 - INFORMATION STORAGE
Information Patent Grant
Field programmable device with internal dynamic test circuit
- Patent number 4,429,388
- Issue date Jan 31, 1984
- Fujitsu Limited
- Toshitaka Fukushima
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 4,424,582
- Issue date Jan 3, 1984
- Fujitsu Limited
- Toshitaka Fukushima
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable read-only memory device
- Patent number 4,376,984
- Issue date Mar 15, 1983
- Fujitsu Limited
- Toshitaka Fukushima
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable read-only memory device
- Patent number 4,347,584
- Issue date Aug 31, 1982
- Fujitsu Limited
- Toshitaka Fukushima
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-state output circuit
- Patent number 4,322,640
- Issue date Mar 30, 1982
- Fujitsu Limited
- Toshitaka Fukushima
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit with double dielectric isolation walls
- Patent number 4,320,411
- Issue date Mar 16, 1982
- Fujitsu Limited
- Toshitaka Fukushima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field programmable device having test provisions for fault detection
- Patent number 4,320,507
- Issue date Mar 16, 1982
- Fujitsu Limited
- Toshitaka Fukushima
- G11 - INFORMATION STORAGE
Information Patent Grant
Surge arrester assembly
- Patent number 4,319,300
- Issue date Mar 9, 1982
- TII Industries, Inc.
- John Napiorkowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programming circuit for permanently storing data in a programmable...
- Patent number 4,319,341
- Issue date Mar 9, 1982
- Fujitsu Limited
- Toshitaka Fukushima
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 4,287,569
- Issue date Sep 1, 1981
- Fujitsu Limited
- Toshitaka Fukushima
- G11 - INFORMATION STORAGE

Toshitaka Fukushima

Person

Patents Grantslast 30 patents

Schottky barrier diode clamp transistor

Semiconductor programmable memory device

Semiconductor wafer-scale integrated device composed of interconnec...

Method of forming groove isolation filled with dielectric for semic...

Test method for detecting faulty memory cell of a programmable device

Method of producing isolation groove structure

Bipolar PROM having transistors with reduced base widths

Junction-shorting type semiconductor read-only memory having increa...

Semiconductor device having a transistor with increased current amp...

Semiconductor memory device utilizing multi-stage decoding

Tristate output buffer with high-impedance state responsive to incr...

Contact structure of semiconductor device

Method for forming an ohmic contact to a semiconductor substrate

Semiconductor device with deep oxide isolation

Field programmable device with circuitry for detecting poor insulat...

Field programmable device with internal dynamic test circuit

Semiconductor memory device

Programmable read-only memory device

Programmable read-only memory device

Three-state output circuit

Integrated circuit with double dielectric isolation walls

Field programmable device having test provisions for fault detection

Surge arrester assembly

Programming circuit for permanently storing data in a programmable...

Semiconductor memory device