Toshiyo Motozima

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Yokohama, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing polycrystalline silicon having columnar ori...
- Patent number 5,382,549
- Issue date Jan 17, 1995
- Kabushiki Kaisha Toshiba
- Jiro Ohshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a silicide layer
- Patent number 5,102,826
- Issue date Apr 7, 1992
- Kabushiki Kaisha Toshiba
- Jiro Ohshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 4,910,170
- Issue date Mar 20, 1990
- Kabushiki Kaisha Toshiba
- Toshiyo Motozima
- H01 - BASIC ELECTRIC ELEMENTS