Trace Q. Hurd

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
System and methods for wafer drying
- Patent number 12,002,687
- Issue date Jun 4, 2024
- Tokyo Electron Limited
- Trace Hurd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and methods for wafer drying
- Patent number 11,515,178
- Issue date Nov 29, 2022
- Tokyo Electron Limited
- Trace Hurd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method to electrostatically remove foreign matter fro...
- Patent number 11,376,640
- Issue date Jul 5, 2022
- Tokyo Electron Limited
- Antonio Luis Pacheco Rotondaro
- B08 - CLEANING
Information Patent Grant
Etching of silicon nitride and silica deposition control in 3D NAND...
- Patent number 10,886,290
- Issue date Jan 5, 2021
- Tokyo Electron Limited
- Derek Bassett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aqueous cleaning solution and method of protecting features on a su...
- Patent number 10,844,332
- Issue date Nov 24, 2020
- Tokyo Electron Limited
- Takayuki Toshima
- C11 - ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES FATTY ACIDS...
Information Patent Grant
Semiconductor device with gate-undercutting recessed region
- Patent number 8,049,254
- Issue date Nov 1, 2011
- Texas Instruments Incorporated
- Antonio Luis Pacheco Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for using a modified post-etch clean rinsing agent
- Patent number 7,732,345
- Issue date Jun 8, 2010
- Texas Instruments Incorporated
- Phillip Daniel Matz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystallographic preferential etch to define a recessed-region for...
- Patent number 7,528,072
- Issue date May 5, 2009
- Texas Instruments Incorporated
- Antonio Luis Pacheco Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step process for patterning a metal gate electrode
- Patent number 7,422,969
- Issue date Sep 9, 2008
- Texas Instruments Incorporated
- Antonio L. P. Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon recess improvement through improved post implant resist rem...
- Patent number 7,371,691
- Issue date May 13, 2008
- Texas Instruments Incorporated
- Lindsey H. Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step process for patterning a metal gate electrode
- Patent number 7,323,403
- Issue date Jan 29, 2008
- Texas Instruments Incroporated
- Antonio L. P. Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Versatile system for wafer edge remediation
- Patent number 7,195,679
- Issue date Mar 27, 2007
- Texas Instruments Incorporated
- Changfeng Xia
- B08 - CLEANING
Information Patent Grant
Treatment of silicon prior to nickel silicide formation
- Patent number 7,132,365
- Issue date Nov 7, 2006
- Texas Instruments Incorporated
- Sue Ellen Crank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce silanol and improve barrier properties in low k di...
- Patent number 7,037,823
- Issue date May 2, 2006
- Texas Instruments Incorporated
- Phillip D. Matz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface treatment of copper to improve interconnect formation
- Patent number 6,995,088
- Issue date Feb 7, 2006
- Texas Instruments Incorporated
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating transistor gate structures
- Patent number 6,787,425
- Issue date Sep 7, 2004
- Texas Instruments Incorporated
- Antonio Luis Pacheco Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contamination control for embedded ferroelectric device fabrication...
- Patent number 6,709,875
- Issue date Mar 23, 2004
- Agilent Technologies, Inc.
- Stephen R. Gilbert
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
System and Methods for Wafer Drying
- Publication number 20230092779
- Publication date Mar 23, 2023
- TOKYO ELECTRON LIMITED
- Trace Hurd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and Method for Wet Chemical Etching in Semiconductor Processing
- Publication number 20210384049
- Publication date Dec 9, 2021
- TOKYO ELECTRON LIMITED
- Derek William Bassett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and Methods for Wafer Drying
- Publication number 20210287919
- Publication date Sep 16, 2021
- TOKYO ELECTRON LIMITED
- Trace Hurd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and Method to Electrostatically Remove Foreign Matter fro...
- Publication number 20200101500
- Publication date Apr 2, 2020
- TOKYO ELECTRON LIMITED
- Antonio Luis Pacheco Rotondaro
- B08 - CLEANING
Information Patent Application
ETCHING OF SILICON NITRIDE AND SILICA DEPOSITION CONTROL IN 3D NAND...
- Publication number 20200027891
- Publication date Jan 23, 2020
- TOKYO ELECTRON LIMITED
- Derek Bassett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AQUEOUS CLEANING SOLUTION AND METHOD OF PROTECTING FEATURES ON A SU...
- Publication number 20190185793
- Publication date Jun 20, 2019
- TOKYO ELECTRON LIMITED
- Takayuki Toshima
- C11 - ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES FATTY ACIDS...
Information Patent Application
ATOMIC LAYER ETCHING SYSTEMS AND METHODS
- Publication number 20170345665
- Publication date Nov 30, 2017
- TOKYO ELECTRON LIMITED
- Jacques FAGUET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE-UNDERCUTTING RECESSED REGION
- Publication number 20110318901
- Publication date Dec 29, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Antonio Luis Pacheco ROTONDARO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE-UNDERCUTTING RECESSED REGION
- Publication number 20110316089
- Publication date Dec 29, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Antonio Luis Pacheco Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE-UNDERCUTTING RECESSED REGION
- Publication number 20090174005
- Publication date Jul 9, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Antonio Luis Pacheco Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR USING A MODIFIED POST-ETCH CLEAN RINSING AGENT
- Publication number 20080057730
- Publication date Mar 6, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Phillip Daniel Matz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Step Process for Patterning a Metal Gate Electrode
- Publication number 20080020558
- Publication date Jan 24, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Antonio L.P. Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALLOGRAPHIC PREFERENTIAL ETCH TO DEFINE A RECESSED-REGION FOR...
- Publication number 20070249168
- Publication date Oct 25, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Antonio Luis Pacheco Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-step process for patterning a metal gate electrode
- Publication number 20060115972
- Publication date Jun 1, 2006
- Texas Instruments, Inc.
- Antonio L.P. Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Treatment of silicon prior to nickel silicide formation
- Publication number 20060035463
- Publication date Feb 16, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Sue Ellen Crank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon recess improvement through improved post implant resist rem...
- Publication number 20060024972
- Publication date Feb 2, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Lindsey H. Hall
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Surface treatment of copper to improve interconnect formation
- Publication number 20050260853
- Publication date Nov 24, 2005
- Texas Instruments, Incorporated
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to reduce silanol and improve barrier properties in low K di...
- Publication number 20050233586
- Publication date Oct 20, 2005
- Phillip D. Matz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Versatile system for wafer edge remediation
- Publication number 20040255985
- Publication date Dec 23, 2004
- Changfeng Xia
- B08 - CLEANING
Information Patent Application
Contamination control for embedded ferroelectric device fabrication...
- Publication number 20030036209
- Publication date Feb 20, 2003
- Stephen R. Gilbert
- H01 - BASIC ELECTRIC ELEMENTS

Trace Q. Hurd

Person

Patents Grantslast 30 patents

System and methods for wafer drying

System and methods for wafer drying

Apparatus and method to electrostatically remove foreign matter fro...

Etching of silicon nitride and silica deposition control in 3D NAND...

Aqueous cleaning solution and method of protecting features on a su...

Semiconductor device with gate-undercutting recessed region

Method for using a modified post-etch clean rinsing agent

Crystallographic preferential etch to define a recessed-region for...

Multi-step process for patterning a metal gate electrode

Silicon recess improvement through improved post implant resist rem...

Multi-step process for patterning a metal gate electrode

Versatile system for wafer edge remediation

Treatment of silicon prior to nickel silicide formation

Method to reduce silanol and improve barrier properties in low k di...

Surface treatment of copper to improve interconnect formation

Methods for fabricating transistor gate structures

Contamination control for embedded ferroelectric device fabrication...

Patents Applicationslast 30 patents

System and Methods for Wafer Drying

System and Method for Wet Chemical Etching in Semiconductor Processing

System and Methods for Wafer Drying

Apparatus and Method to Electrostatically Remove Foreign Matter fro...

ETCHING OF SILICON NITRIDE AND SILICA DEPOSITION CONTROL IN 3D NAND...

AQUEOUS CLEANING SOLUTION AND METHOD OF PROTECTING FEATURES ON A SU...

ATOMIC LAYER ETCHING SYSTEMS AND METHODS

SEMICONDUCTOR DEVICE WITH GATE-UNDERCUTTING RECESSED REGION

SEMICONDUCTOR DEVICE WITH GATE-UNDERCUTTING RECESSED REGION

SEMICONDUCTOR DEVICE WITH GATE-UNDERCUTTING RECESSED REGION

METHOD FOR USING A MODIFIED POST-ETCH CLEAN RINSING AGENT

Multi-Step Process for Patterning a Metal Gate Electrode

CRYSTALLOGRAPHIC PREFERENTIAL ETCH TO DEFINE A RECESSED-REGION FOR...

Multi-step process for patterning a metal gate electrode

Treatment of silicon prior to nickel silicide formation

Silicon recess improvement through improved post implant resist rem...

Surface treatment of copper to improve interconnect formation

Method to reduce silanol and improve barrier properties in low K di...

Versatile system for wafer edge remediation

Contamination control for embedded ferroelectric device fabrication...