Trinh Hai Dang

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
High yield RRAM cell with optimized film scheme
- Patent number 11,637,239
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High yield RRAM cell with optimized film scheme
- Patent number 10,388,865
- Issue date Aug 20, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High K scheme to improve retention performance of resistive random...
- Patent number 10,193,065
- Issue date Jan 29, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM cell bottom electrode formation
- Patent number 10,170,699
- Issue date Jan 1, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High yield RRAM cell with optimized film scheme
- Patent number 9,876,167
- Issue date Jan 23, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM cell bottom electrode formation
- Patent number 9,577,191
- Issue date Feb 21, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide film scheme for RRAM structure
- Patent number 9,431,609
- Issue date Aug 30, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline layer for passivation of III-N surface
- Patent number 9,130,026
- Issue date Sep 8, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Han-Chin Chiu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH YIELD RRAM CELL WITH OPTIMIZED FILM SCHEME
- Publication number 20190371999
- Publication date Dec 5, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH YIELD RRAM CELL WITH OPTIMIZED FILM SCHEME
- Publication number 20180138402
- Publication date May 17, 2018
- Taiwan Semiconductor Manufacturing Co., LTD
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM CELL BOTTOM ELECTRODE FORMATION
- Publication number 20170162787
- Publication date Jun 8, 2017
- Taiwan Semiconductor Manufacturing Co., LTD
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High K Scheme to Improve Retention Performance of Resistive Random...
- Publication number 20160064664
- Publication date Mar 3, 2016
- Taiwan Semiconductor Manufacturing Co., LTD
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE FILM SCHEME FOR RRAM STRUCTURE
- Publication number 20160049584
- Publication date Feb 18, 2016
- Taiwan Semiconductor Manufacturing Co., LTD
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM CELL BOTTOM ELECTRODE FORMATION
- Publication number 20150287918
- Publication date Oct 8, 2015
- Taiwan Semiconductor Manufacturing Co., LTD
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH YIELD RRAM CELL WITH OPTIMIZED FILM SCHEME
- Publication number 20150287917
- Publication date Oct 8, 2015
- Taiwan Semiconductor Manufacturing Co., LTD
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Crystalline Layer for Passivation of III-N Surface
- Publication number 20150060873
- Publication date Mar 5, 2015
- Taiwan Semiconductor Manufacturing Co., LTD
- Han-Chin Chiu
- H01 - BASIC ELECTRIC ELEMENTS

Trinh Hai Dang

Person

Patents Grantslast 30 patents

High yield RRAM cell with optimized film scheme

High yield RRAM cell with optimized film scheme

High K scheme to improve retention performance of resistive random...

RRAM cell bottom electrode formation

High yield RRAM cell with optimized film scheme

RRAM cell bottom electrode formation

Oxide film scheme for RRAM structure

Crystalline layer for passivation of III-N surface

Patents Applicationslast 30 patents

HIGH YIELD RRAM CELL WITH OPTIMIZED FILM SCHEME

HIGH YIELD RRAM CELL WITH OPTIMIZED FILM SCHEME

RRAM CELL BOTTOM ELECTRODE FORMATION

High K Scheme to Improve Retention Performance of Resistive Random...

OXIDE FILM SCHEME FOR RRAM STRUCTURE

RRAM CELL BOTTOM ELECTRODE FORMATION

HIGH YIELD RRAM CELL WITH OPTIMIZED FILM SCHEME

Crystalline Layer for Passivation of III-N Surface