Tristan A. TRONIC

Person

Aloha, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multi-layer crystalline back gated thin film transistor
- Patent number 12,119,409
- Issue date Oct 15, 2024
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures with metal oxide-caped contacts...
- Patent number 12,087,836
- Issue date Sep 10, 2024
- Intel Corporation
- Rami Hourani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Subtractively patterned interconnect structures for integrated circ...
- Patent number 12,027,458
- Issue date Jul 2, 2024
- Intel Corporation
- Kevin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization structures for stacked device connectivity and their...
- Patent number 11,869,894
- Issue date Jan 9, 2024
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnects having a portion without a liner material and related...
- Patent number 11,837,542
- Issue date Dec 5, 2023
- Intel Corporation
- Manish Chandhok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures with metal oxide-caped contacts...
- Patent number 11,837,644
- Issue date Dec 5, 2023
- Intel Corporation
- Rami Hourani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device including air gapping of gate spacers and other dielectrics...
- Patent number 11,769,814
- Issue date Sep 26, 2023
- Intel Corporation
- Ehren Mannebach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer crystalline back gated thin film transistor
- Patent number 11,764,306
- Issue date Sep 19, 2023
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film transistors with low contact resistance
- Patent number 11,742,429
- Issue date Aug 29, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local interconnect with air gap
- Patent number 11,594,485
- Issue date Feb 28, 2023
- Intel Corporation
- Kevin L. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Subtractively patterned interconnect structures for integrated circ...
- Patent number 11,444,024
- Issue date Sep 13, 2022
- Intel Corporation
- Kevin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization structures for stacked device connectivity and their...
- Patent number 11,430,814
- Issue date Aug 30, 2022
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EUV phase-shift SRAF masks by means of embedded phase shift layers
- Patent number 11,300,885
- Issue date Apr 12, 2022
- Intel Corporation
- Robert Bristol
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Interconnects having a portion without a liner material and related...
- Patent number 11,264,325
- Issue date Mar 1, 2022
- Intel Corporation
- Manish Chandhok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming thin film resistor structures utilizing intercon...
- Patent number 11,201,114
- Issue date Dec 14, 2021
- Intel Corporation
- Kevin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film transistors with low contact resistance
- Patent number 11,189,733
- Issue date Nov 30, 2021
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap for thin film transistors
- Patent number 11,158,711
- Issue date Oct 26, 2021
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer crystalline back gated thin film transistor
- Patent number 11,152,514
- Issue date Oct 19, 2021
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pitch quartered three-dimensional air gaps
- Patent number 11,152,254
- Issue date Oct 19, 2021
- Intel Corporation
- Manish Chandhok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V semiconductor fuses and their methods of fabrication
- Patent number 11,107,764
- Issue date Aug 31, 2021
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate for a transistor
- Patent number 11,004,982
- Issue date May 11, 2021
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Maskless air gap to prevent via punch through
- Patent number 10,971,394
- Issue date Apr 6, 2021
- Intel Corporation
- Manish Chandhok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned hard masks with converted liners
- Patent number 10,937,689
- Issue date Mar 2, 2021
- Intel Corporation
- Manish Chandhok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Maskless air gap to prevent via punch through
- Patent number 10,256,141
- Issue date Apr 9, 2019
- Intel Corporation
- Manish Chandhok
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUITS WITH MONOLAYER TMD CHANNEL AND MULTILAYER TMD S...
- Publication number 20240355934
- Publication date Oct 24, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBTRACTIVELY PATTERNED INTERCONNECT STRUCTURES FOR INTEGRATED CIRC...
- Publication number 20240304543
- Publication date Sep 12, 2024
- Intel Corporation
- Kevin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...
- Publication number 20240222482
- Publication date Jul 4, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES
- Publication number 20240222441
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...
- Publication number 20240222485
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS
- Publication number 20240120415
- Publication date Apr 11, 2024
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR PEROVSKITE TRANSISTORS
- Publication number 20240113212
- Publication date Apr 4, 2024
- Intel Corporation
- Ian Alexander Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY
- Publication number 20240114696
- Publication date Apr 4, 2024
- Intel Corporation
- Christopher Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES
- Publication number 20240105810
- Publication date Mar 28, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DE...
- Publication number 20240105822
- Publication date Mar 28, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT (IC) DEVICE WITH MULTILAYER METAL LINE
- Publication number 20240105588
- Publication date Mar 28, 2024
- Intel Corporation
- Ilya V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...
- Publication number 20240097031
- Publication date Mar 21, 2024
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INORGANIC MATERIAL DEPOSITION FOR INTER-DIE FILL IN MULTI-CHIP COMP...
- Publication number 20240063071
- Publication date Feb 22, 2024
- Intel Corporation
- Jeffery Bielefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES WITH METAL OXIDE-CAPED CONTACTS...
- Publication number 20240047543
- Publication date Feb 8, 2024
- Intel Corporation
- Rami HOURANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECTS HAVING A PORTION WITHOUT A LINER MATERIAL AND RELATED...
- Publication number 20240038661
- Publication date Feb 1, 2024
- Intel Corporation
- Manish Chandhok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL O...
- Publication number 20230420364
- Publication date Dec 28, 2023
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY METAL LAYERS IN ELECTRODE STACKS FOR TRANSITION METAL...
- Publication number 20230402499
- Publication date Dec 14, 2023
- Intel Corporation
- Thomas Sounart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER CRYSTALLINE BACK GATED THIN FILM TRANSISTOR
- Publication number 20230352598
- Publication date Nov 2, 2023
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTORS HAVING CMOS FUNCTIONALITY INTEGRATED WITH 2D...
- Publication number 20230113614
- Publication date Apr 13, 2023
- Intel Corporation
- Kevin P. O'BRIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED 2D CMOS WITH INTER METAL LAYERS
- Publication number 20230101760
- Publication date Mar 30, 2023
- Intel Corporation
- Kevin P. O'BRIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH A MONOLAYER EDGE CONTACT
- Publication number 20230097898
- Publication date Mar 30, 2023
- Intel Corpration
- Kevin P. O'BRIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS INTEGRATION OF 2D MATERIAL BY END ETCH
- Publication number 20230096347
- Publication date Mar 30, 2023
- Intel Corporation
- Kevin P. O'BRIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MEMORY STRUCTURE WITH DUAL-CHANNEL TRANSISTOR
- Publication number 20230081882
- Publication date Mar 16, 2023
- Intel Corporation
- Sean T. Ma
- G11 - INFORMATION STORAGE
Information Patent Application
SUBTRACTIVELY PATTERNED INTERCONNECT STRUCTURES FOR INTEGRATED CIR...
- Publication number 20220352068
- Publication date Nov 3, 2022
- Intel Corporation
- Kevin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METALLIZATION STRUCTURES FOR STACKED DEVICE CONNECTIVITY AND THEIR...
- Publication number 20220344376
- Publication date Oct 27, 2022
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP
- Publication number 20220310818
- Publication date Sep 29, 2022
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE DIELECTRICS FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTORS TRANS...
- Publication number 20220199619
- Publication date Jun 23, 2022
- Intel Corporation
- Ashish Verma Penumatcha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECTS HAVING A PORTION WITHOUT A LINER MATERIAL AND RELATED...
- Publication number 20220148967
- Publication date May 12, 2022
- Intel Corporation
- Manish Chandhok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBTRACTIVELY PATTERNED INTERCONNECT STRUCTURES FOR INTEGRATED CIR...
- Publication number 20220139823
- Publication date May 5, 2022
- Intel Corporation
- Kevin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN-FILM TRANSISTORS WITH LOW CONTACT RESISTANCE
- Publication number 20220045220
- Publication date Feb 10, 2022
- Intel Corporation
- Abhishek A. SHARMA
- H01 - BASIC ELECTRIC ELEMENTS

Tristan A. TRONIC

Person

Patents Grantslast 30 patents

Multi-layer crystalline back gated thin film transistor

Contact over active gate structures with metal oxide-caped contacts...

Subtractively patterned interconnect structures for integrated circ...

Metallization structures for stacked device connectivity and their...

Interconnects having a portion without a liner material and related...

Contact over active gate structures with metal oxide-caped contacts...

Device including air gapping of gate spacers and other dielectrics...

Multi-layer crystalline back gated thin film transistor

Thin-film transistors with low contact resistance

Local interconnect with air gap

Subtractively patterned interconnect structures for integrated circ...

Metallization structures for stacked device connectivity and their...

EUV phase-shift SRAF masks by means of embedded phase shift layers

Interconnects having a portion without a liner material and related...

Methods of forming thin film resistor structures utilizing intercon...

Thin-film transistors with low contact resistance

Air gap for thin film transistors

Multi-layer crystalline back gated thin film transistor

Pitch quartered three-dimensional air gaps

Group III-V semiconductor fuses and their methods of fabrication

Gate for a transistor

Maskless air gap to prevent via punch through

Self-aligned hard masks with converted liners

Maskless air gap to prevent via punch through

Patents Applicationslast 30 patents

INTEGRATED CIRCUITS WITH MONOLAYER TMD CHANNEL AND MULTILAYER TMD S...

SUBTRACTIVELY PATTERNED INTERCONNECT STRUCTURES FOR INTEGRATED CIRC...

TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...

SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES

TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...

TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS

TECHNOLOGIES FOR PEROVSKITE TRANSISTORS

IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY

VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES

STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DE...

INTEGRATED CIRCUIT (IC) DEVICE WITH MULTILAYER METAL LINE

FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...

INORGANIC MATERIAL DEPOSITION FOR INTER-DIE FILL IN MULTI-CHIP COMP...

CONTACT OVER ACTIVE GATE STRUCTURES WITH METAL OXIDE-CAPED CONTACTS...

INTERCONNECTS HAVING A PORTION WITHOUT A LINER MATERIAL AND RELATED...

MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL O...

HIGH DENSITY METAL LAYERS IN ELECTRODE STACKS FOR TRANSITION METAL...

MULTI-LAYER CRYSTALLINE BACK GATED THIN FILM TRANSISTOR

THIN FILM TRANSISTORS HAVING CMOS FUNCTIONALITY INTEGRATED WITH 2D...

STACKED 2D CMOS WITH INTER METAL LAYERS

TRANSISTOR STRUCTURE WITH A MONOLAYER EDGE CONTACT

CMOS INTEGRATION OF 2D MATERIAL BY END ETCH

STACKED MEMORY STRUCTURE WITH DUAL-CHANNEL TRANSISTOR

SUBTRACTIVELY PATTERNED INTERCONNECT STRUCTURES FOR INTEGRATED CIR...

METALLIZATION STRUCTURES FOR STACKED DEVICE CONNECTIVITY AND THEIR...

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP

GATE DIELECTRICS FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTORS TRANS...

INTERCONNECTS HAVING A PORTION WITHOUT A LINER MATERIAL AND RELATED...

SUBTRACTIVELY PATTERNED INTERCONNECT STRUCTURES FOR INTEGRATED CIR...

THIN-FILM TRANSISTORS WITH LOW CONTACT RESISTANCE