True-Lon Lin

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Masking methods and etching sequences for patterning electrodes of...
- Patent number 6,919,168
- Issue date Jul 19, 2005
- Applied Materials, Inc.
- Jeng H. Hwang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Infrared radiation-detecting device
- Patent number 6,734,452
- Issue date May 11, 2004
- California Institute of Technology
- Sarath Gunapala
- G01 - MEASURING TESTING
Information Patent Grant
Infrared radiation-detecting device
- Patent number 6,211,529
- Issue date Apr 3, 2001
- California Institute of Technology
- Sarath Gunapala
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Cost savings for manufacturing planar MOSFET devices achieved by im...
- Patent number 6,104,060
- Issue date Aug 15, 2000
- MegaMOS Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Punch-through prevention in trenched DMOS with poly-silicon layer c...
- Patent number 5,986,304
- Issue date Nov 16, 1999
- MegaMOS Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET device manufactured with simplified fabrication proces...
- Patent number 5,923,065
- Issue date Jul 13, 1999
- MegaMOS Corporation
- Koon Chong So
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned and process-adjusted high density power transistor wit...
- Patent number 5,907,169
- Issue date May 25, 1999
- MegaMOS Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET structure and fabrication process implemented by forming dee...
- Patent number 5,895,951
- Issue date Apr 20, 1999
- MegaMOS Corporation
- Koon Chong So
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-contact structure to prevent contact metal penetration through...
- Patent number 5,883,416
- Issue date Mar 16, 1999
- MegaMOS Corporation
- True-Lon Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mosfet termination design and core cell configuration to increase b...
- Patent number 5,877,529
- Issue date Mar 2, 1999
- MegaMOS Corporation
- Koon Chong So
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFETs and cell topology
- Patent number 5,844,277
- Issue date Dec 1, 1998
- MagePower Semiconductor Corp.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DMOS transistors having trenched gate oxide
- Patent number 5,763,915
- Issue date Jun 9, 1998
- MageMOS Corporation
- Fwu-Juan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET transistor cell manufactured with selectively implanted punc...
- Patent number 5,731,611
- Issue date Mar 24, 1998
- MegaMOS Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET structure and fabrication process for decreasing threshold v...
- Patent number 5,729,037
- Issue date Mar 17, 1998
- MegaMOS Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DMOS fabrication process implemented with reduced number of masks
- Patent number 5,668,026
- Issue date Sep 16, 1997
- MegaMOS Corporation
- True-Lon Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Infrared radiation-detecting device
- Publication number 20030205704
- Publication date Nov 6, 2003
- California Institute of Technology, a California corporation
- Sarath D. Gunapala
- G01 - MEASURING TESTING
Information Patent Application
Masking methods and etching sequences for patterning electrodes of...
- Publication number 20030059720
- Publication date Mar 27, 2003
- Jeng H. Hwang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

True-Lon Lin

Person

Patents Grantslast 30 patents

Masking methods and etching sequences for patterning electrodes of...

Infrared radiation-detecting device

Infrared radiation-detecting device

Cost savings for manufacturing planar MOSFET devices achieved by im...

Punch-through prevention in trenched DMOS with poly-silicon layer c...

Power MOSFET device manufactured with simplified fabrication proces...

Self-aligned and process-adjusted high density power transistor wit...

MOSFET structure and fabrication process implemented by forming dee...

Gate-contact structure to prevent contact metal penetration through...

Mosfet termination design and core cell configuration to increase b...

Power MOSFETs and cell topology

DMOS transistors having trenched gate oxide

MOSFET transistor cell manufactured with selectively implanted punc...

MOSFET structure and fabrication process for decreasing threshold v...

DMOS fabrication process implemented with reduced number of masks

Patents Applicationslast 30 patents

Infrared radiation-detecting device

Masking methods and etching sequences for patterning electrodes of...