Tsann Lin

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 12,167,609
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Min-Kun Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction (MTJ) element and its fabrication process
- Patent number 12,069,961
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ya-Ling Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 12,035,636
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunneling junction (MTJ) element with an amorphous buffer...
- Patent number 12,029,046
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsann Lin
Information Patent Grant
Magnetic tunnel junction (MTJ) element and its fabrication process
- Patent number 12,022,743
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Tsann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor including a hydrogen-diffusion barrier and methods for f...
- Patent number 11,935,935
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Min-Kun Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal seed layer for magnetic random access memory (MRAM)
- Patent number 11,842,757
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsann Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistors with enhanced dopant profile and methods for forming th...
- Patent number 11,837,667
- Issue date Dec 5, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Min-Kun Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and semiconductor die, and method of fabricating memo...
- Patent number 11,825,664
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction (MTJ) element and its fabrication process
- Patent number 11,716,909
- Issue date Aug 1, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ya-Ling Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction device and method
- Patent number 11,698,423
- Issue date Jul 11, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jui-Fen Chien
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 11,672,185
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming semiconductor memory structure
- Patent number 11,532,339
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Jui-Fen Chien
- G11 - INFORMATION STORAGE
Information Patent Grant
Crystal seed layer for magnetic random access memory (MRAM)
- Patent number 11,527,275
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsann Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistors with enhanced dopant profile and methods for forming th...
- Patent number 11,404,586
- Issue date Aug 2, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Min-Kun Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and semiconductor die, and method of fabricating memo...
- Patent number 11,289,538
- Issue date Mar 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 11,165,012
- Issue date Nov 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunneling junction (MTJ) element with an amorphous buffer...
- Patent number 11,088,201
- Issue date Aug 10, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsann Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20240389343
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- MIN-KUN DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS
- Publication number 20240365676
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- YA-LING LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL WITH A BUFFER LAYER AND ITS FABRICATION PROCESS
- Publication number 20240324244
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsann Lin
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS
- Publication number 20240315144
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- TSANN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20240315147
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTOR INCLUDING A HYDROGEN-DIFFUSION BARRIER AND METHODS FOR F...
- Publication number 20240162318
- Publication date May 16, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Min-Kun Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)
- Publication number 20240062794
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...
- Publication number 20240040801
- Publication date Feb 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR
- Publication number 20230369438
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Neil Quinn Murray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING FERROELECTRIC MEMORY DEVICE
- Publication number 20230363173
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS
- Publication number 20230337547
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- YA-LING LEE
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Tunnel Junction Devices
- Publication number 20230296701
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jui-Fen Chien
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20230263073
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)
- Publication number 20230109928
- Publication date Apr 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsann Lin
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS
- Publication number 20230039119
- Publication date Feb 9, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- TSANN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20230036606
- Publication date Feb 2, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- MIN-KUN DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CHARACTERIZING MAGNETIC DEVICE
- Publication number 20230019001
- Publication date Jan 19, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- I CHENG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR INCLUDING A HYDROGEN-DIFFUSION BARRIER AND METHODS FOR F...
- Publication number 20220352333
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Min-Kun DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH ENHANCED DOPANT PROFILE AND METHODS FOR FORMING TH...
- Publication number 20220336671
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Min-Kun Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors with Enhanced Dopant Profile and Methods for Forming th...
- Publication number 20220254930
- Publication date Aug 11, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Min-Kun DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20220231036
- Publication date Jul 21, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Ling Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...
- Publication number 20220216269
- Publication date Jul 7, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS
- Publication number 20220115586
- Publication date Apr 14, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- YA-LING LEE
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Tunnel Junction Device and Method
- Publication number 20220050150
- Publication date Feb 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jui-Fen Chien
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20220052254
- Publication date Feb 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR MEMORY STRUCTURE
- Publication number 20210390992
- Publication date Dec 16, 2021
- Jui-Fen Chien
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNELING JUNCTION (MTJ) ELEMENT WITH AN AMORPHOUS BUFFER...
- Publication number 20210359002
- Publication date Nov 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...
- Publication number 20210036055
- Publication date Feb 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20200136018
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)
- Publication number 20200098408
- Publication date Mar 26, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Tsann Lin
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Semiconductor structure and method of forming the same

Magnetic tunnel junction (MTJ) element and its fabrication process

Magnetic device and magnetic random access memory

Magnetic tunneling junction (MTJ) element with an amorphous buffer...

Magnetic tunnel junction (MTJ) element and its fabrication process

Transistor including a hydrogen-diffusion barrier and methods for f...

Crystal seed layer for magnetic random access memory (MRAM)

Transistors with enhanced dopant profile and methods for forming th...

Memory device and semiconductor die, and method of fabricating memo...

Magnetic tunnel junction (MTJ) element and its fabrication process

Magnetic tunnel junction device and method

Magnetic device and magnetic random access memory

Method for forming semiconductor memory structure

Crystal seed layer for magnetic random access memory (MRAM)

Transistors with enhanced dopant profile and methods for forming th...

Memory device and semiconductor die, and method of fabricating memo...

Magnetic device and magnetic random access memory

Magnetic tunneling junction (MTJ) element with an amorphous buffer...

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS

MEMORY CELL WITH A BUFFER LAYER AND ITS FABRICATION PROCESS

MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

TRANSISTOR INCLUDING A HYDROGEN-DIFFUSION BARRIER AND METHODS FOR F...

CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)

MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...

TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR

METHOD OF FORMING FERROELECTRIC MEMORY DEVICE

MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS

Magnetic Tunnel Junction Devices

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)

MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

METHOD FOR CHARACTERIZING MAGNETIC DEVICE

TRANSISTOR INCLUDING A HYDROGEN-DIFFUSION BARRIER AND METHODS FOR F...

TRANSISTORS WITH ENHANCED DOPANT PROFILE AND METHODS FOR FORMING TH...

Transistors with Enhanced Dopant Profile and Methods for Forming th...

MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...

MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS

Magnetic Tunnel Junction Device and Method

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

METHOD FOR FORMING SEMICONDUCTOR MEMORY STRUCTURE

MAGNETIC TUNNELING JUNCTION (MTJ) ELEMENT WITH AN AMORPHOUS BUFFER...

MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)