Tsubasa Honke

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide substrate
- Patent number 12,104,278
- Issue date Oct 1, 2024
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Silicon carbide substrate
- Patent number 12,091,772
- Issue date Sep 17, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate
- Patent number 12,071,708
- Issue date Aug 27, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate
- Patent number 12,031,233
- Issue date Jul 9, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate and method of manufacturing silicon carbi...
- Patent number 11,913,135
- Issue date Feb 27, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Recycle wafer of silicon carbide and method for manufacturing silic...
- Patent number 11,862,684
- Issue date Jan 2, 2024
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial wafer
- Patent number 11,459,670
- Issue date Oct 4, 2022
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate
- Patent number 11,342,418
- Issue date May 24, 2022
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate and silicon carbide epitaxial substrate
- Patent number 11,322,349
- Issue date May 3, 2022
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide single crystal substrate and method for manufacturi...
- Patent number 10,872,759
- Issue date Dec 22, 2020
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 10,526,699
- Issue date Jan 7, 2020
- Sumitomo Electric Industries, Ltd
- Kenji Kanbara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide ingot and method for manufacturing silicon carbide...
- Patent number 10,427,324
- Issue date Oct 1, 2019
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate
- Patent number 10,221,501
- Issue date Mar 5, 2019
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- B24 - GRINDING POLISHING
Information Patent Grant
Silicon carbide substrate, method for producing same, and method fo...
- Patent number 10,030,319
- Issue date Jul 24, 2018
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- B24 - GRINDING POLISHING
Information Patent Grant
Silicon carbide single crystal substrate, silicon carbide semicondu...
- Patent number 9,978,651
- Issue date May 22, 2018
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- B24 - GRINDING POLISHING
Information Patent Grant
Silicon carbide single-crystal substrate, silicon carbide epitaxial...
- Patent number 9,896,781
- Issue date Feb 20, 2018
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- B24 - GRINDING POLISHING
Information Patent Grant
Method of manufacturing silicon carbide single crystal and silicon...
- Patent number 9,799,735
- Issue date Oct 24, 2017
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon carbide single crystal and silicon...
- Patent number 9,290,860
- Issue date Mar 22, 2016
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device
- Patent number 8,859,387
- Issue date Oct 14, 2014
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate, semiconductor device, method of manufact...
- Patent number 8,624,266
- Issue date Jan 7, 2014
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20240363696
- Publication date Oct 31, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki NISHIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20240274434
- Publication date Aug 15, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki NISHIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...
- Publication number 20240234509
- Publication date Jul 11, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...
- Publication number 20240145229
- Publication date May 2, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...
- Publication number 20240136403
- Publication date Apr 25, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...
- Publication number 20230357957
- Publication date Nov 9, 2023
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARB...
- Publication number 20220403550
- Publication date Dec 22, 2022
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE
- Publication number 20220220637
- Publication date Jul 14, 2022
- Sumitomo Electric Industries, Ltd.
- Tsubasa HONKE
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE
- Publication number 20220220638
- Publication date Jul 14, 2022
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...
- Publication number 20220170179
- Publication date Jun 2, 2022
- Sumitomo Electric Industries, Ltd.
- Tsubasa HONKE
- C30 - CRYSTAL GROWTH
Information Patent Application
RECYCLE WAFER OF SILICON CARBIDE AND METHOD FOR MANUFACTURING SILIC...
- Publication number 20220085172
- Publication date Mar 17, 2022
- Sumitomo Electric Industries, Ltd.
- Tsubasa HONKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE
- Publication number 20200388683
- Publication date Dec 10, 2020
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE
- Publication number 20200385887
- Publication date Dec 10, 2020
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER
- Publication number 20200362470
- Publication date Nov 19, 2020
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20200083039
- Publication date Mar 12, 2020
- Sumitomo Electric Industries, Ltd.
- Tsubasa HONKE
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Carbide Epitaxial Substrate and Method for Manufacturing Si...
- Publication number 20190242014
- Publication date Aug 8, 2019
- Kenji KANBARA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE SUBSTRATE
- Publication number 20180274129
- Publication date Sep 27, 2018
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- B24 - GRINDING POLISHING
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE SEMICONDU...
- Publication number 20180033703
- Publication date Feb 1, 2018
- Sumitomo Electric Industries, Ltd.
- Tsubasa HONKE
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE, METHOD FOR PRODUCING SAME, AND METHOD FO...
- Publication number 20170335489
- Publication date Nov 23, 2017
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURI...
- Publication number 20170256391
- Publication date Sep 7, 2017
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL...
- Publication number 20170073837
- Publication date Mar 16, 2017
- Sumitomo Electric Industries, Ltd.
- Tsubasa HONKE
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE INGOT AND METHOD FOR MANUFACTURING SILICON CARBIDE...
- Publication number 20160236375
- Publication date Aug 18, 2016
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...
- Publication number 20160155808
- Publication date Jun 2, 2016
- Sumitomo Electric Industries, Ltd.
- Tsubasa HONKE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...
- Publication number 20150010726
- Publication date Jan 8, 2015
- Sumitomo Electric Industries, Ltd.
- Tsubasa HONKE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20140030874
- Publication date Jan 30, 2014
- Tsubasa HONKE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20140030892
- Publication date Jan 30, 2014
- Tsubasa HONKE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20130137198
- Publication date May 30, 2013
- Sumitomo Electric Industries, Ltd.
- Tsubasa HONKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE AND METHOD OF MAN...
- Publication number 20130017683
- Publication date Jan 17, 2013
- Sumitomo Electric Industries, Ltd.
- Tsubasa HONKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD OF MANUFACT...
- Publication number 20120161155
- Publication date Jun 28, 2012
- Sumitomo Electric Industries, Ltd.
- Shin HARADA
- C30 - CRYSTAL GROWTH

Tsubasa Honke

Person

Patents Grantslast 30 patents

Silicon carbide substrate

Silicon carbide substrate

Silicon carbide substrate

Silicon carbide substrate

Silicon carbide substrate and method of manufacturing silicon carbi...

Recycle wafer of silicon carbide and method for manufacturing silic...

Silicon carbide epitaxial wafer

Silicon carbide substrate

Silicon carbide substrate and silicon carbide epitaxial substrate

Silicon carbide single crystal substrate and method for manufacturi...

Silicon carbide epitaxial substrate and method for manufacturing si...

Silicon carbide ingot and method for manufacturing silicon carbide...

Silicon carbide substrate

Silicon carbide substrate, method for producing same, and method fo...

Silicon carbide single crystal substrate, silicon carbide semicondu...

Silicon carbide single-crystal substrate, silicon carbide epitaxial...

Method of manufacturing silicon carbide single crystal and silicon...

Method of manufacturing silicon carbide single crystal and silicon...

Method for manufacturing silicon carbide semiconductor device

Silicon carbide substrate, semiconductor device, method of manufact...

Patents Applicationslast 30 patents

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...

SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARB...

SILICON CARBIDE SUBSTRATE

SILICON CARBIDE SUBSTRATE

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...

RECYCLE WAFER OF SILICON CARBIDE AND METHOD FOR MANUFACTURING SILIC...

SILICON CARBIDE SUBSTRATE

SILICON CARBIDE SUBSTRATE

SILICON CARBIDE EPITAXIAL WAFER

SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE EPITAXIAL SUBSTRATE

Silicon Carbide Epitaxial Substrate and Method for Manufacturing Si...

SILICON CARBIDE SUBSTRATE

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE SEMICONDU...

SILICON CARBIDE SUBSTRATE, METHOD FOR PRODUCING SAME, AND METHOD FO...

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURI...

SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL...

SILICON CARBIDE INGOT AND METHOD FOR MANUFACTURING SILICON CARBIDE...

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE AND METHOD OF MAN...

SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD OF MANUFACT...