Tsuguo Fukuda

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing GaAs single crystal
- Patent number 4,637,854
- Issue date Jan 20, 1987
- Agency of Industrial Science and Technology
- Tsuguo Fukuda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for manufacturing semiconductor single crystal
- Patent number 4,606,037
- Issue date Aug 12, 1986
- Agency of Industrial Science and Technology
- Kazutaka Terashima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacture of III-V group compound semiconductor single...
- Patent number 4,586,979
- Issue date May 6, 1986
- Agency of Industrial Science and Technology
- Tooru Katsumata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for manufacturing single crystals
- Patent number 4,539,067
- Issue date Sep 3, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Syoichi Washizuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacture of III-V compound semiconducting single crystal
- Patent number 4,496,424
- Issue date Jan 29, 1985
- Agency of Industrial Science and Technology
- Kazutaka Terashima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing gallium phosphide single crystals
- Patent number 4,431,476
- Issue date Feb 14, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Masayuki Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for manufacturing single crystals
- Patent number 4,397,813
- Issue date Aug 9, 1983
- Tokyo Shibaura Denki Kabushiki Kaisha
- Syoichi Washizuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a lithium tantalate single crystal
- Patent number 4,371,419
- Issue date Feb 1, 1983
- Tokyo Shibaura Electric Co., Ltd.
- Tsuguo Fukuda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for preparing oxide piezoelectric material wafers
- Patent number 4,154,025
- Issue date May 15, 1979
- Tokyo Shibaura Electric Co., Ltd.
- Tsuguo Fukuda
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Method for producing a lithium tantalate single crystal
- Patent number 4,144,117
- Issue date Mar 13, 1979
- Tokyo Shibaura Electric Co., Ltd.
- Tsuguo Fukuda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Lithium tantalate single crystal growth from a platinum-rhodium cru...
- Patent number 4,135,963
- Issue date Jan 23, 1979
- Tokyo Shibaura Electric Co., Ltd.
- Tsuguo Fukuda
- C30 - CRYSTAL GROWTH

Tsuguo Fukuda

Person

Patents Grantslast 30 patents

Method for producing GaAs single crystal

Apparatus for manufacturing semiconductor single crystal

Method for manufacture of III-V group compound semiconductor single...

Method and apparatus for manufacturing single crystals

Method for manufacture of III-V compound semiconducting single crystal

Method for manufacturing gallium phosphide single crystals

Apparatus for manufacturing single crystals

Method for producing a lithium tantalate single crystal

Method for preparing oxide piezoelectric material wafers

Method for producing a lithium tantalate single crystal

Lithium tantalate single crystal growth from a platinum-rhodium cru...